| A new aspect of saturation phenomenon in FinFETs and its implication on analog circuits S Banchhor, KD Kumar, A Dwivedi, B Anand IEEE Transactions on Electron Devices 66 (7), 2863-2868, 2019 | 17 | 2019 |
| Negative-to-positive differential resistance transition in ferroelectric FET: physical insight and utilization in analog circuits N Chauhan, N Bagga, S Banchhor, A Datta, S Dasgupta, A Bulusu IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 69 …, 2021 | 15 | 2021 |
| BOX engineering to mitigate negative differential resistance in MFIS negative capacitance FDSOI FET: an analog perspective N Chauhan, N Bagga, S Banchhor, C Garg, A Sharma, A Datta, ... Nanotechnology 33 (8), 085203, 2021 | 14 | 2021 |
| Demonstration of a novel tunnel FET with channel sandwiched by drain N Bagga, N Chauhan, S Banchhor, D Gupta, S Dasgupta Semiconductor Science and Technology 35 (1), 015008, 2019 | 14 | 2019 |
| Investigation of trap-induced performance degradation and restriction on higher ferroelectric thickness in negative capacitance FDSOI FET C Garg, N Chauhan, A Sharma, S Banchhor, A Doneria, S Dasgupta, ... IEEE Transactions on Electron Devices 68 (10), 5298-5304, 2021 | 12 | 2021 |
| Traps based reliability barrier on performance and revealing early ageing in negative capacitance FET A Gupta, G Bajpai, P Singhal, N Bagga, O Prakash, S Banchhor, ... 2021 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2021 | 12 | 2021 |
| Self-heating and interface traps assisted early aging revelation and reliability analysis of negative capacitance FinFET RK Jaisawal, S Rathore, N Gandhi, PN Kondekar, S Banchhor, ... 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023 | 10 | 2023 |
| Design optimization Using Symmetric/Asymmetric Spacer for 14 nm Multi-Fin Tri-gate Fin-FET for Mid-Band 5G Applications J Patel, S Banchhor, S Guglani, A Dasgupta, S Roy, A Bulusu, ... 2022 35th International Conference on VLSI Design and 2022 21st …, 2022 | 8 | 2022 |
| Performance study of high-k gate & spacer dielectric Dopant Segregated Schottky Barrier SOI MOSFET SKS Banchhor, PN Kondekar 2015 2nd International Conference on Electronics and Communication Systems …, 2015 | 8 | 2015 |
| Impact of random spatial fluctuation in non-uniform crystalline phases on multidomain MFIM capacitor and negative capacitance FDSOI N Chauhan, C Garg, K Ni, AK Behera, S Yadav, S Banchhor, N Bagga, ... 2022 IEEE International Reliability Physics Symposium (IRPS), P23-1-P23-6, 2022 | 6 | 2022 |
| Design and characterization of bulk driven MOS varactor based VCO at near threshold regime LM Dani, N Mishra, SK Banchhor, S Miryala, A Doneria, B Anand 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2018 | 5 | 2018 |
| Self-Heating Aware Threshold Voltage Modulation Conforming to Process and Ambient Temperature Variation for Reliable Nanosheet FET S Rathore, RK Jaisawal, PN Kondekar, N Gandhi, S Banchhor, YS Song, ... 2023 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2023 | 4 | 2023 |
| A new physical insight into the zero-temperature coefficient with self-heating in silicon-on-insulator fin field-effect transistors S Banchhor, N Chauhan, B Anand Semiconductor Science and Technology 36 (3), 035005, 2021 | 4 | 2021 |
| Gain stabilization methodology for FinFET amplifiers considering self-heating effect S Banchhor, N Chauhan, A Doneria, B Anand 2021 34th International Conference on VLSI Design and 2021 20th …, 2021 | 3 | 2021 |
| Influence of underlap gate length on analog/RF performance of pocket doped Schottky Barrier MOSFET S Banchhor, S KaleP, N Kondekar 2015 2nd International Conference on Electronics and Communication Systems …, 2015 | 3 | 2015 |
| Demonstration of a junctionless negative capacitance FinFET-based hydrogen gas sensor: A reliability perspective N Gandhi, RK Jaisawal, S Rathore, PN Kondekar, S Banchhor, N Bagga 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023 | 2 | 2023 |
| Impact of underlap channel on analog/RF performance of dopant segregated Schottky barrier MOSFET on ultra thin body SOI S Kale, S Banchhor, PN Kondekar 2016 International Conference on Emerging Trends in Engineering, Technology …, 2016 | 2 | 2016 |
| Through-silicon-via induced stress-aware FinFET buffer sizing in 3D ICs S Yadav, N Chauhan, R Chawla, A Sharma, S Banchhor, R Pratap, ... Semiconductor Science and Technology 37 (8), 085023, 2022 | 1 | 2022 |
| A physical insight into variation aware minimum V DD for deep subthreshold operation of FinFET S Yadav, N Chauhan, S Tyagi, A Sharma, S Banchhor, R Joshi, R Pratap, ... Semiconductor Science and Technology 36 (12), 125002, 2021 | 1 | 2021 |
| Analysis of Transient Negative Capacitance Characteristics for Stabilization and Amplification N Chauhan, G Bajpai, S Banchhor, N Bagga 2020 24th International Symposium on VLSI Design and Test (VDAT), 1-5, 2020 | 1 | 2020 |
