| Enhanced Mg doping efficiency in superlattices P Kozodoy, M Hansen, SP DenBaars, UK Mishra Applied Physics Letters 74 (24), 3681-3683, 1999 | 349 | 1999 |
| Indium tin oxide contacts to gallium nitride optoelectronic devices T Margalith, O Buchinsky, DA Cohen, AC Abare, M Hansen, SP DenBaars, ... Applied Physics Letters 74 (26), 3930-3932, 1999 | 325 | 1999 |
| LED lighting efficacy: status and directions PM Pattison, M Hansen, JY Tsao Comptes Rendus. Physique 19 (3), 134-145, 2018 | 255 | 2018 |
| Polarization-enhanced Mg doping of AlGaN/GaN superlattices P Kozodoy, YP Smorchkova, M Hansen, H Xing, SP DenBaars, UK Mishra, ... Applied Physics Letters 75 (16), 2444-2446, 1999 | 232 | 1999 |
| Optically and thermally detected deep levels in n-type Schottky and GaN diodes A Hierro, D Kwon, SA Ringel, M Hansen, JS Speck, UK Mishra, ... Applied Physics Letters 76 (21), 3064-3066, 2000 | 170 | 2000 |
| Hydrogen passivation of deep levels in A Hierro, SA Ringel, M Hansen, JS Speck, UK Mishra, SP DenBaars Applied Physics Letters 77 (10), 1499-1501, 2000 | 161 | 2000 |
| High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers P Fini, L Zhao, B Moran, M Hansen, H Marchand, JP Ibbetson, ... Applied Physics Letters 75 (12), 1706-1708, 1999 | 133 | 1999 |
| Influence of pressure on the optical properties of epilayers and quantum structures P Perlin, I Gorczyca, T Suski, P Wisniewski, S Lepkowski, NE Christensen, ... Physical Review B 64 (11), 115319, 2001 | 94 | 2001 |
| Simulation and optimization of 420-nm InGaN/GaN laser diodes J Piprek, RK Sink, MA Hansen, JE Bowers, SP DenBaars Physics and Simulation of Optoelectronic Devices VIII 3944, 28-39, 2000 | 93 | 2000 |
| Quantum information phases in space-time: measurement-induced entanglement and teleportation on a noisy quantum processor JC Hoke, M Ippoliti, D Abanin, R Acharya, M Ansmann, F Arute, K Arya, ... arXiv preprint arXiv:2303.04792, 2023 | 86* | 2023 |
| Impact of Ga/N flux ratio on trap states in grown by plasma-assisted molecular-beam epitaxy A Hierro, AR Arehart, B Heying, M Hansen, UK Mishra, SP DenBaars, ... Applied physics letters 80 (5), 805-807, 2002 | 84 | 2002 |
| Phase transition in random circuit sampling A Morvan, B Villalonga, X Mi, S Mandra, A Bengtsson, PV Klimov, Z Chen, ... arXiv preprint arXiv:2304.11119, 2023 | 82 | 2023 |
| Capture kinetics of electron traps in MBE‐Grown n‐GaN A Hierro, AR Arehart, B Heying, M Hansen, JS Speck, UK Mishra, ... physica status solidi (b) 228 (1), 309-313, 2001 | 78 | 2001 |
| Higher efficiency InGaN laser diodes with an improved quantum well capping configuration M Hansen, J Piprek, PM Pattison, JS Speck, S Nakamura, SP DenBaars Applied physics letters 81 (22), 4275-4277, 2002 | 73 | 2002 |
| Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire M Hansen, P Fini, L Zhao, AC Abare, LA Coldren, JS Speck, ... Applied Physics Letters 76 (5), 529-531, 2000 | 73 | 2000 |
| Mg-rich precipitates in the p-type doping of InGaN-based laser diodes M Hansen, LF Chen, SH Lim, SP DenBaars, JS Speck Applied physics letters 80 (14), 2469-2471, 2002 | 58 | 2002 |
| Purification-based quantum error mitigation of pair-correlated electron simulations TE O’Brien, G Anselmetti, F Gkritsis, VE Elfving, S Polla, WJ Huggins, ... Nature Physics 19 (12), 1787-1792, 2023 | 57 | 2023 |
| Composite high reflectivity layer T Li, M Hansen, J Ibbetson US Patent 7,915,629, 2011 | 49 | 2011 |
| Structural and optical characteristics of multiple quantum wells with different In compositions YH Kwon, GH Gainer, S Bidnyk, YH Cho, JJ Song, M Hansen, ... Applied physics letters 75 (17), 2545-2547, 1999 | 48 | 1999 |
| Channeling as a mechanism for dry etch damage in GaN ED Haberer, CH Chen, A Abare, M Hansen, S Denbaars, L Coldren, ... Applied Physics Letters 76 (26), 3941-3943, 2000 | 44 | 2000 |
