| Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices F Roccaforte, P Fiorenza, G Greco, RL Nigro, F Giannazzo, F Iucolano, ... Microelectronic Engineering 187, 66-77, 2017 | 450 | 2017 |
| Ohmic contacts to Gallium Nitride materials G Greco, F Iucolano, F Roccaforte Applied Surface Science 383, 324-345, 2016 | 317 | 2016 |
| Richardson’s constant in inhomogeneous silicon carbide Schottky contacts F Roccaforte, F La Via, V Raineri, R Pierobon, E Zanoni Journal of Applied Physics 93 (11), 9137-9144, 2003 | 282 | 2003 |
| An Overview of Normally-Off GaN-Based High Electron Mobility Transistors F Roccaforte, G Greco, P Fiorenza, F Iucolano Materials 12 (10), 1599, 2019 | 266 | 2019 |
| Review of technology for normally-off HEMTs with p-GaN gate G Greco, F Iucolano, F Roccaforte Materials Science in Semiconductor Processing 78, 96-106, 2018 | 257 | 2018 |
| Barrier inhomogeneity and electrical properties of Pt∕ GaN Schottky contacts F Iucolano, F Roccaforte, F Giannazzo, V Raineri Journal of Applied Physics 102 (11), 2007 | 188 | 2007 |
| Recent advances on dielectrics technology for SiC and GaN power devices F Roccaforte, P Fiorenza, G Greco, M Vivona, RL Nigro, F Giannazzo, ... Applied Surface Science 301, 9-18, 2014 | 181 | 2014 |
| Structural and electrical characterisation of titanium and nickel silicide contacts on silicon carbide F La Via, F Roccaforte, A Makhtari, V Raineri, P Musumeci, L Calcagno Microelectronic Engineering 60 (1-2), 269-282, 2002 | 156 | 2002 |
| Challenges for energy efficient wide band gap semiconductor power devices F Roccaforte, P Fiorenza, G Greco, RL Nigro, F Giannazzo, A Patti, ... physica status solidi (a) 211 (9), 2063-2071, 2014 | 141 | 2014 |
| Surface and interface issues in wide band gap semiconductor electronics F Roccaforte, F Giannazzo, F Iucolano, J Eriksson, MH Weng, V Raineri Applied Surface Science 256 (19), 5727-5735, 2010 | 125 | 2010 |
| Electronic transport at monolayer-bilayer junctions in epitaxial graphene on SiC F Giannazzo, I Deretzis, A La Magna, F Roccaforte, R Yakimova Physical Review B—Condensed Matter and Materials Physics 86 (23), 235422, 2012 | 117 | 2012 |
| Temperature dependence of the specific resistance in Ti∕ Al∕ Ni∕ Au contacts on n-type GaN F Iucolano, F Roccaforte, A Alberti, C Bongiorno, S Di Franco, V Raineri Journal of applied physics 100 (12), 2006 | 112 | 2006 |
| High responsivity 4H-SiC Schottky UV photodiodes based on the pinch-off surface effect A Sciuto, F Roccaforte, S Di Franco, V Raineri, G Bonanno Applied physics letters 89 (8), 2006 | 105 | 2006 |
| Ohmic contacts to SiC F Roccaforte, F La Via, V Raineri International journal of high speed electronics and systems 15 (04), 781-820, 2005 | 104 | 2005 |
| Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review P Fiorenza, F Giannazzo, F Roccaforte Energies 12 (12), 2310, 2019 | 99 | 2019 |
| Highly reproducible ideal SiC Schottky rectifiers: Effects of surface preparation and thermal annealing on the Ni/6H-SiC barrier height F Roccaforte, F La Via, V Raineri, P Musumeci, L Calcagno, ... Applied Physics A 77, 827-833, 2003 | 99 | 2003 |
| SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3 P Fiorenza, F Giannazzo, M Vivona, A La Magna, F Roccaforte Applied Physics Letters 103 (15), 2013 | 98 | 2013 |
| Vertical transistors based on 2D materials: Status and prospects F Giannazzo, G Greco, F Roccaforte, SS Sonde Crystals 8 (2), 70, 2018 | 92 | 2018 |
| Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization F Giannazzo, G Fisichella, G Greco, S Di Franco, I Deretzis, A La Magna, ... ACS Applied Materials & Interfaces 9 (27), 23164-23174, 2017 | 92 | 2017 |
| Nanoscale transport properties at silicon carbide interfaces F Roccaforte, F Giannazzo, V Raineri Journal of Physics D: Applied Physics 43 (22), 223001, 2010 | 92 | 2010 |
Filippo GiannazzoCNR, Istituto per la Microelettronica e i Microsistemi, Catania, Italy在 imm.cnr.it 的电子邮件经过验证
