Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral PDC King, TD Veal, F Fuchs, CY Wang, DJ Payne, A Bourlange, H Zhang, ... Physical Review B 79 (20), 205211, 2009 | 522 | 2009 |
Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO JB Yi, CC Lim, GZ Xing, HM Fan, LH Van, SL Huang, KS Yang, XL Huang, ... Physical review letters 104 (13), 137201, 2010 | 501 | 2010 |
P-type transparent conducting oxides KHL Zhang, K Xi, MG Blamire, RG Egdell Journal of Physics: Condensed Matter 28 (38), 383002, 2016 | 433 | 2016 |
Recent progress on the electronic structure, defect, and doping properties of Ga2O3 J Zhang, J Shi, DC Qi, L Chen, KHL Zhang APL Materials 8 (2), 020906, 2020 | 395 | 2020 |
Wide bandgap oxide semiconductors: from materials physics to optoelectronic devices J Shi, J Zhang, L Yang, M Qu, DC Qi, KHL Zhang Advanced Materials 33 (50), 2006230, 2021 | 284 | 2021 |
Fundamental Carrier Lifetime Exceeding 1 µs in Cs2AgBiBr6 Double Perovskite RLZ Hoye, L Eyre, F Wei, F Brivio, A Sadhanala, S Sun, W Li, KHL Zhang, ... Advanced Materials Interfaces 5 (15), 1800464, 2018 | 208 | 2018 |
Perovskite Sr‐Doped LaCrO3 as a New p‐Type Transparent Conducting Oxide KHL Zhang, Y Du, A Papadogianni, O Bierwagen, S Sallis, LFJ Piper, ... Advanced Materials 27 (35), 5191-5195, 2015 | 203 | 2015 |
Strongly Enhanced Photovoltaic Performance and Defect Physics of Air‐Stable Bismuth Oxyiodide (BiOI) RLZ Hoye, LC Lee, RC Kurchin, TN Huq, KHL Zhang, M Sponseller, ... Advanced Materials 29 (36), 1702176, 2017 | 175 | 2017 |
Electronic and transport properties of Li-doped NiO epitaxial thin films JY Zhang, WW Li, RLZ Hoye, JL MacManus-Driscoll, M Budde, ... Journal of Materials Chemistry C 6 (9), 2275-2282, 2018 | 159 | 2018 |
Microscopic origin of electron accumulation in In 2 O 3 KHL Zhang, RG Egdell, F Offi, S Iacobucci, L Petaccia, S Gorovikov, ... Physical review letters 110 (5), 056803, 2013 | 128 | 2013 |
P-block metal-based (Sn, In, Bi, Pb) electrocatalysts for selective reduction of CO2 to formate Z Yang, FE Oropeza, KHL Zhang Apl Materials 8 (6), 2020 | 124 | 2020 |
A Single‐Step Hydrothermal Route to 3D Hierarchical Cu2O/CuO/rGO Nanosheets as High‐Performance Anode of Lithium‐Ion Batteries S Wu, G Fu, W Lv, J Wei, W Chen, H Yi, M Gu, X Bai, L Zhu, C Tan, ... Small 14 (5), 1702667, 2018 | 119 | 2018 |
Embedding ZnSe nanodots in nitrogen-doped hollow carbon architectures for superior lithium storage Z Chen, R Wu, H Wang, KHL Zhang, Y Song, F Wu, F Fang, D Sun Nano Research 11, 966-978, 2018 | 118 | 2018 |
The electronic structure of transition metal oxides for oxygen evolution reaction H Wang, KHL Zhang, JP Hofmann, FE Oropeza Journal of Materials Chemistry A 9 (35), 19465-19488, 2021 | 116 | 2021 |
Surface energies control the self-organization of oriented In2O3 nanostructures on cubic zirconia KHL Zhang, A Walsh, CRA Catlow, VK Lazarov, RG Egdell Nano letters 10 (9), 3740-3746, 2010 | 111 | 2010 |
Defects in complex oxide thin films for electronics and energy applications: challenges and opportunities W Li, J Shi, KHL Zhang, JL MacManus-Driscoll Materials Horizons 7 (11), 2832-2859, 2020 | 102 | 2020 |
Increased activity in the oxygen evolution reaction by Fe 4+-induced hole states in perovskite La 1− x Sr x FeO 3 Z Shen, Y Zhuang, W Li, X Huang, FE Oropeza, EJM Hensen, ... Journal of Materials Chemistry A 8 (8), 4407-4415, 2020 | 94 | 2020 |
Fabrication and Interfacial Electronic Structure of Wide Bandgap NiO and Ga2O3 p–n Heterojunction J Zhang, S Han, M Cui, X Xu, W Li, H Xu, C Jin, M Gu, L Chen, KHL Zhang ACS Applied Electronic Materials 2 (2), 456-463, 2020 | 93 | 2020 |
Hole-induced insulator-to-metal transition in L a 1− x S r x Cr O 3 epitaxial films KHL Zhang, Y Du, PV Sushko, ME Bowden, V Shutthanandan, S Sallis, ... Physical Review B 91 (15), 155129, 2015 | 93 | 2015 |
Orbital controlled band gap engineering of tetragonal BiFeO 3 for optoelectronic applications L Qiao, S Zhang, HY Xiao, DJ Singh, KHL Zhang, ZJ Liu, XT Zu, S Li Journal of Materials Chemistry C 6 (5), 1239-1247, 2018 | 91 | 2018 |