Continuous germanene layer on Al (111) M Derivaz, D Dentel, R Stephan, MC Hanf, A Mehdaoui, P Sonnet, C Pirri Nano letters 15 (4), 2510-2516, 2015 | 688 | 2015 |
Epitaxial growth of germanium dots on Si (001) surface covered by a very thin silicon oxide layer A Barski, M Derivaz, JL Rouviere, D Buttard Applied Physics Letters 77 (22), 3541-3543, 2000 | 100 | 2000 |
Germanene on Al (111): interface electronic states and charge transfer R Stephan, MC Hanf, M Derivaz, D Dentel, MC Asensio, J Avila, ... The Journal of Physical Chemistry C 120 (3), 1580-1585, 2016 | 64 | 2016 |
Nanomanipulation by atomic force microscopy of carbon nanotubes on a nanostructured surface S Decossas, L Patrone, AM Bonnot, F Comin, M Derivaz, A Barski, ... Surface Science 543 (1-3), 57-62, 2003 | 56 | 2003 |
Electrical property improvements of yttrium oxide-based metal-insulator-metal capacitors C Durand, C Vallée, C Dubourdieu, M Kahn, M Derivaz, S Blonkowski, ... Journal of Vacuum Science & Technology A 24 (3), 459-466, 2006 | 33 | 2006 |
Grafting process of ethyltrimethoxysilane and polyphosphoric acid on calcium carbonate surface J Kiehl, C Ben-Azzouz, D Dentel, M Derivaz, JL Bischoff, C Delaite, ... Applied surface science 264, 864-871, 2013 | 32 | 2013 |
Bidimensional intercalation of Ge between SiC (0001) and a heteroepitaxial graphite top layer L Kubler, K Aït-Mansour, M Diani, D Dentel, JL Bischoff, M Derivaz Physical Review B—Condensed Matter and Materials Physics 72 (11), 115319, 2005 | 30 | 2005 |
Tip-induced switch of germanene atomic structure R Stephan, M Derivaz, MC Hanf, D Dentel, N Massara, A Mehdaoui, ... The Journal of Physical Chemistry Letters 8 (18), 4587-4593, 2017 | 25 | 2017 |
Two dimensional Si layer epitaxied on LaAlO3 (111) substrate: RHEED and XPS investigations CB Azzouz, A Akremi, M Derivaz, JL Bischoff, M Zanouni, D Dentel Journal of Physics: Conference Series 491 (1), 012003, 2014 | 16 | 2014 |
Epitaxy of Si nanocrystals by molecular beam epitaxy on a crystalline insulator LaAlO3 (0 0 1) H Mortada, D Dentel, M Derivaz, JL Bischoff, E Denys, R Moubah, ... Journal of crystal growth 323 (1), 247-249, 2011 | 15 | 2011 |
Si epitaxial growth on LaAlO3 (0 0 1) H Mortada, M Derivaz, D Dentel, H Srour, JL Bischoff Surface science 603 (9), L66-L69, 2009 | 11 | 2009 |
Structural investigation of the LaAlO3 (110) surface H Mortada, M Derivaz, D Dentel, JL Bischoff Thin Solid Films 517 (1), 441-443, 2008 | 11 | 2008 |
Strain and composition of ultrasmall Ge quantum dots studied by x-ray scattering and in situ surface x-ray absorption spectroscopy R Dujardin, V Poydenot, TU Schülli, G Renaud, O Ulrich, A Barski, ... Journal of applied physics 99 (6), 2006 | 11 | 2006 |
Ge quantum dots on a large band gap semiconductor: the first growth stages on 4H–SiC (0 0 0 1) K Aıt-Mansour, D Dentel, JL Bischoff, L Kubler, M Diani, A Barski, ... Physica E: Low-dimensional Systems and Nanostructures 23 (3-4), 428-434, 2004 | 11 | 2004 |
Structure of germanene/Al (111): A two-layer surface alloy K Zhang, D Sciacca, MC Hanf, R Bernard, Y Borensztein, A Resta, ... The Journal of Physical Chemistry C 125 (44), 24702-24709, 2021 | 10 | 2021 |
Controlling shape and spatial organization of silver crystals by site-selective chemical growth method for improving surface enhanced Raman scattering activity M Rajab, K Mougin, M Derivaz, L Josien, V Luchnikov, J Toufaily, K Hariri, ... Colloids and Surfaces A: Physicochemical and Engineering Aspects 484, 508-517, 2015 | 10 | 2015 |
Resolving the structure of the striped Ge layer on surface alloy with alternate fcc and hcp domains K Zhang, D Sciacca, A Coati, R Bernard, Y Borensztein, P Diener, ... Physical Review B 104 (15), 155403, 2021 | 9 | 2021 |
The ground state of epitaxial germanene on Ag (111) K Zhang, MC Hanf, R Bernard, Y Borensztein, H Cruguel, A Resta, ... ACS nano 17 (16), 15687-15695, 2023 | 8 | 2023 |
Si and Ge nanostructures epitaxy on a crystalline insulating LaAlO3(001) substrate JL Bischoff, H Mortada, D Dentel, M Derivaz, C Ben Azzouz, A Akremi, ... physica status solidi (a) 209 (4), 657-662, 2012 | 8 | 2012 |
Original Ge-induced phenomena on various SiC (0 0 0 1) reconstructions K Aït-Mansour, D Dentel, L Kubler, M Diani, M Derivaz, JL Bischoff Journal of Physics D: Applied Physics 40 (20), 6225, 2007 | 7 | 2007 |