| Continuous wave, distributed feedback diode laser based sensor for trace-gas detection of ethane K Krzempek, R Lewicki, L Nähle, M Fischer, J Koeth, S Belahsene, ... Applied Physics B 106, 251-255, 2012 | 101 | 2012 |
| Detection of acetylene impurities in ethylene and polyethylene manufacturing processes using tunable diode laser spectroscopy in the 3-μm range P Kluczynski, M Jahjah, L Nähle, O Axner, S Belahsene, M Fischer, ... Applied Physics B 105, 427-434, 2011 | 70 | 2011 |
| Continuous-wave operation of type-I quantum well DFB laser diodes emitting in 3.4 µm wavelength range around room temperature L Naehle, S Belahsene, M Von Edlinger, M Fischer, G Boissier, P Grech, ... Electronics letters 47 (1), 46-47, 2011 | 69 | 2011 |
| Tunable-diode-laser spectroscopy of C2H2 using a 3.03 μm GaInAsSb/AlGaInAsSb distributed-feedback laser P Kluczynski, S Lundqvist, S Belahsene, Y Rouillard Optics letters 34 (24), 3767-3769, 2009 | 40 | 2009 |
| Model of Ni-63 battery with realistic PIN structure CE Munson, M Arif, J Streque, S Belahsene, A Martinez, A Ramdane, ... Journal of applied physics 118 (10), 2015 | 39 | 2015 |
| Laser Diodes for Gas Sensing Emitting at 3.06 m at Room Temperature S Belahsene, L Naehle, M Fischer, J Koeth, G Boissier, P Grech, G Narcy, ... IEEE Photonics Technology Letters 22 (15), 1084-1086, 2010 | 37 | 2010 |
| Detection of propane using tunable diode laser spectroscopy at 3.37 μm P Kluczynski, S Lundqvist, S Belahsene, Y Rouillard, L Nähle, M Fischer, ... Applied Physics B 108, 183-188, 2012 | 35 | 2012 |
| Improving InGaN heterojunction solar cells efficiency using a semibulk absorber M Arif, W Elhuni, J Streque, S Sundaram, S Belahsene, Y El Gmili, ... Solar Energy Materials and Solar Cells 159, 405-411, 2017 | 33 | 2017 |
| Quartz enhanced photoacoustic spectroscopy with a 3.38 μm antimonide distributed feedback laser M Jahjah, S Belahsene, L Nähle, M Fischer, J Koeth, Y Rouillard, A Vicet Optics Letters 37 (13), 2502-2504, 2012 | 29 | 2012 |
| Recombination channels in 2.4–3.2 µm GaInAsSb quantum-well lasers KS Gadedjisso-Tossou, S Belahsene, MA Mohou, E Tournié, Y Rouillard Semiconductor Science and Technology 28 (1), 015015, 2012 | 28 | 2012 |
| Dynamic characterization of III-nitride-based high-speed photodiodes B Alshehri, K Dogheche, S Belahsene, A Ramdane, G Patriarche, ... IEEE Photonics Journal 9 (4), 1-7, 2017 | 26 | 2017 |
| Microstructural and electrical investigation of Pd/Au ohmic contact on p-GaN S Belahsene, G Patriarche, D Troadec, S Sundaram, A Ougazzaden, ... Journal of Vacuum Science & Technology B 33 (1), 2015 | 25 | 2015 |
| Analysis of deep level defects in GaN pin diodes after beta particle irradiation S Belahsene, NA Al Saqri, D Jameel, A Mesli, A Martinez, J De Sanoit, ... Electronics 4 (4), 1090-1100, 2015 | 17 | 2015 |
| Electrical parameters of Au/n-GaN and Pt/n-GaN Schottky diodes MA Kadaoui, WB Bouiadjra, A Saidane, S Belahsene, A Ramdane Superlattices and Microstructures 82, 269-286, 2015 | 15 | 2015 |
| Band offsets and photoluminescence thermal quenching in mid-infrared emitting GaInAsSb quantum wells with quinary AlGaInAsSb barriers G Sęk, M Motyka, K Ryczko, F Janiak, J Misiewicz, S Belahsene, ... Japanese Journal of Applied Physics 49 (3R), 031202, 2010 | 13 | 2010 |
| Effect of annealing-induced interdiffusion on the electronic structure of mid infrared emitting GaInAsSb/AlGaInAsSb quantum wells K Ryczko, G Sęk, M Motyka, F Janiak, M Kubisa, J Misiewicz, ... Japanese Journal of Applied Physics 50 (3R), 031202, 2011 | 12 | 2011 |
| DFB lasers for sensing applications in the 3.0-3.5 um wavelength range MO Fischer, M Von Edlinger, L Nähle, J Koeth, A Bauer, M Dallner, ... Quantum Sensing and Nanophotonic Devices VIII 7945, 107-119, 2011 | 11 | 2011 |
| Monolithic tunable GaSb-based lasers at 3.3 µm L Naehle, C Zimmermann, S Belahsene, M Fischer, G Boissier, P Grech, ... Electronics letters 47 (19), 1092-1093, 2011 | 9 | 2011 |
| Optical transitions and band gap discontinuities of GaInAsSb/AlGaAsSb quantum wells emitting in the 3 μm range determined by modulation spectroscopy M Motyka, G Sęk, K Ryczko, J Misiewicz, S Belahsene, G Boissier, ... Journal of Applied Physics 106 (6), 2009 | 8 | 2009 |
| Discrimination of Carrier Conduction Mechanisms of InP/InGaAsP/InAs/InP Laser Structure Through––Measurements N Ayarcı, O Özdemir, K Bozkurt, A Ramdane, S Belahsene, A Martinez IEEE Transactions on Electron Devices 63 (5), 1866-1870, 2016 | 7 | 2016 |
