| The silicon vacancy in SiC E Janzén, A Gali, P Carlsson, A Gällström, B Magnusson, NT Son Physica B: Condensed Matter 404 (22), 4354-4358, 2009 | 132 | 2009 |
| Excitation properties of the divacancy in -SiC B Magnusson, NT Son, A Csóré, A Gällström, T Ohshima, A Gali, ... Physical Review B 98 (19), 195202, 2018 | 66 | 2018 |
| Identification and tunable optical coherent control of transition-metal spins in silicon carbide T Bosma, GJJ Lof, CM Gilardoni, OV Zwier, F Hendriks, B Magnusson, ... npj Quantum Information 4 (1), 48, 2018 | 64 | 2018 |
| Theory of neutral divacancy in SiC: a defect for spintronics A Gali, A Gällström, NT Son, E Janzén Materials science forum 645, 395-397, 2010 | 52 | 2010 |
| High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment CL Hsiao, TW Liu, CT Wu, HC Hsu, GM Hsu, LC Chen, WY Shiao, ... Applied Physics Letters 92 (11), 2008 | 36 | 2008 |
| Asymmetric Split-Vacancy Defects in SiC Polytypes: A Combined<? format?> Theoretical and Electron Spin Resonance Study V Ivady, A Gällström, NT Son, E Janzén, A Gali Physical review letters 107 (19), 195501, 2011 | 33 | 2011 |
| Very high crystalline quality of thick 4H‐SiC epilayers grown from methyltrichlorosilane (MTS) H Pedersen, S Leone, A Henry, V Darakchieva, P Carlsson, A Gällström, ... physica status solidi (RRL)–Rapid Research Letters 2 (4), 188-190, 2008 | 33 | 2008 |
| Object recognition in forward looking sonar images using transfer learning LR Fuchs, A Gällström, J Folkesson 2018 IEEE/OES Autonomous Underwater Vehicle Workshop (AUV), 1-6, 2018 | 30 | 2018 |
| Prominent defects in semi-insulating SiC substrates NT Son, P Carlsson, A Gällström, B Magnusson, E Janzén Physica B: Condensed Matter 401, 67-72, 2007 | 30 | 2007 |
| Deep levels in iron doped n-and p-type 4H-SiC FC Beyer, CG Hemmingsson, S Leone, YC Lin, A Gällström, A Henry, ... Journal of Applied Physics 110 (12), 2011 | 28 | 2011 |
| Deep levels in tungsten doped n-type 3C–SiC FC Beyer, CG Hemmingsson, A Gällström, S Leone, H Pedersen, A Henry, ... Applied physics letters 98 (15), 2011 | 23 | 2011 |
| Optical identification and electronic configuration of tungsten in 4H-and 6H-SiC A Gällström, B Magnusson, FC Beyer, A Gali, NT Son, S Leone, IG Ivanov, ... Physica B: Condensed Matter 407 (10), 1462-1466, 2012 | 19 | 2012 |
| Electron paramagnetic resonance and theoretical studies of Nb in 4H-and 6H-SiC N Tien Son, X Thang Trinh, A Gällström, S Leone, O Kordina, E Janzén, ... Journal of Applied Physics 112 (8), 2012 | 16 | 2012 |
| Deep levels and carrier compensation in V-doped semi-insulating 4H-SiC NT Son, P Carlsson, A Gällström, B Magnusson, E Janzén Applied Physics Letters 91 (20), 2007 | 15 | 2007 |
| Optical identification of Mo related deep level defect in 4H and 6H SiC A Gällström, B Magnusson, E Janzén Materials Science Forum 615, 405-408, 2009 | 13 | 2009 |
| Deep learning based technique for enhanced sonar imaging L Rixon Fuchs, C Larsson, A Gällström 5th Underwater Acoustics Conference & Exhibition (UACE), Hersonissos, Crete …, 2019 | 10 | 2019 |
| Optical properties and Zeeman spectroscopy of niobium in silicon carbide A Gällström, B Magnusson, S Leone, O Kordina, NT Son, V Ivády, A Gali, ... Physical Review B 92 (7), 075207, 2015 | 8 | 2015 |
| Enhanced sonar image resolution using compressive sensing modelling A Gällström, L Rixon Fuchs, C Larsson 5th Underwater Acoustics Conference & Exhibition (UACE), Hersonissos, Crete …, 2019 | 6 | 2019 |
| Investigation of Mo defects in 4H-SiC by means of density functional theory A Csóré, A Gällström, E Janzén, Á Gali Materials Science Forum 858, 261-264, 2016 | 6 | 2016 |
| Optical characterization of deep level defects in SiC A Gällström Linköping University Electronic Press, 2015 | 5 | 2015 |
Nguyen Tien Sonprofessor i semiconductor physics, Linköping University在 ifm.liu.se 的电子邮件经过验证
