| Strong band edge luminescence from InN films grown on Si substrates by electron cyclotron resonance-assisted molecular beam epitaxy T Yodo, H Yona, H Ando, D Nosei, Y Harada Applied physics letters 80 (6), 968-970, 2002 | 104 | 2002 |
| Buffer-enhanced room-temperature growth and characterization of epitaxial ZnO thin films A Sasaki, W Hara, A Matsuda, N Tateda, S Otaka, S Akiba, K Saito, ... Applied Physics Letters 86 (23), 2005 | 84 | 2005 |
| Lattice-mismatch effects on properties in ZnSe layer grown on GaAs substrate by low pressure OMVPE S Fujita, T Yodo, A Sasaki Journal of Crystal Growth 72 (1-2), 27-30, 1985 | 55 | 1985 |
| Growth and characterization of GaSe and GaAs/GaSe on As‐passivated Si (111) substrates JE Palmer, T Saitoh, T Yodo, M Tamura Journal of applied physics 74 (12), 7211-7222, 1993 | 48 | 1993 |
| Growth of high-quality ZnSe by MOVPE on (100) ZnSe substrate T Yodo, T Koyama, K Yamashita Journal of Crystal Growth 86 (1-4), 273-278, 1988 | 34 | 1988 |
| Growth and characterization of GaAs/GaSe/Si heterostructures JE Palmer, T Saitoh, TYT Yodo, MTM Tamura Japanese journal of applied physics 32 (8B), L1126, 1993 | 32 | 1993 |
| Growth of ZnSe single crystals by iodine transport T Koyama, T Yodo, H Oka, K Yamashita, T Yamasaki Journal of crystal growth 91 (4), 639-646, 1988 | 32 | 1988 |
| Growth and Characterization of InN Heteroepitaxial Layers Grown on Si Substrates by ECR‐Assisted MBE T Yodo, H Ando, D Nosei, Y Harada physica status solidi (b) 228 (1), 21-26, 2001 | 31 | 2001 |
| Li‐doped ZnSe epitaxial layers by ion implantation T Yodo, K Yamashita Applied physics letters 53 (24), 2403-2405, 1988 | 31 | 1988 |
| Reactor pressure dependence of properties of undoped ZnSe grown by low-pressure omvpe S Fujita, T Yodo, Y Matsuda, A Sasaki Journal of crystal growth 71 (1), 169-172, 1985 | 28 | 1985 |
| Facile preparation of YAG: Ce nanoparticles by laser irradiation in water and their optical properties N Tsuruoka, T Sasagawa, T Yodo, M Yoshimoto, O Odawara, H Wada SpringerPlus 5, 1-7, 2016 | 26 | 2016 |
| Relationship between the optical and structural properties in GaAs heteroepitaxial layers grown on Si substrates T Yodo, M Tamura, T Saitoh Journal of crystal growth 141 (3-4), 331-342, 1994 | 26 | 1994 |
| High‐quality epitaxial growth of ZnSe on (100) ZnSe by atmospheric pressure metalorganic vapor phase epitaxy T Yodo, T Koyama, K Yamashita Journal of applied physics 64 (5), 2403-2407, 1988 | 26 | 1988 |
| Epitaxial growth of high quality ZnSe on GaAs substrate by atmospheric pressure MOVPE using dimethylzinc and hydrogen selenide T Yodo, H Oka, T Koyama, K Yamashita Japanese journal of applied physics 26 (5A), L561, 1987 | 26 | 1987 |
| Double acceptor bound exciton in Ge H Nakata, T Yodo, E Otsuka Solid State Communications 45 (2), 55-57, 1983 | 23 | 1983 |
| Damage due to nitrogen molecular ions of GaN heteroepitaxial layers grown on Si (001) substrates by molecular beam epitaxy assisted by electron cyclotron resonance T Yodo, H Tsuchiya, H Ando, Y Harada Japanese Journal of Applied Physics 39 (5R), 2523, 2000 | 22 | 2000 |
| GaAs on Si (111) with a layered structure GaSe buffer layer JE Palmer, T Saitoh, T Yodo, M Tamura Journal of crystal growth 150, 685-690, 1995 | 22 | 1995 |
| Strain-free, ultra-high purity ZnSe layers grown by molecular beam epitaxy RM Park, CM Rouleau, MB Troffer, T Koyama, T Yodo Journal of Materials Research 5, 475-477, 1990 | 22 | 1990 |
| Thermal stability of ZnSe epilayer grown by MOVPE T Yodo, K Yamashita Journal of Crystal Growth 93 (1-4), 656-661, 1988 | 21 | 1988 |
| Growth of GaSe on As-passivated Si (111) substrates JE Palmer, T Saitoh, T Yodo, M Tamura Journal of crystal growth 147 (3-4), 283-291, 1995 | 20 | 1995 |
