| Ion beams in silicon processing and characterization E Chason, ST Picraux, JM Poate, JO Borland, MI Current, ... Journal of applied physics 81 (10), 6513-6561, 1997 | 361 | 1997 |
| Ionizing radiation damage effects on GaN devices SJ Pearton, F Ren, E Patrick, ME Law, AY Polyakov ECS Journal of solid state science and technology 5 (2), Q35, 2015 | 342 | 2015 |
| Self-consistent model of minority-carrier lifetime, diffusion length, and mobility ME Law, E Solley, M Liang, DE Burk IEEE Electron device letters 12 (8), 401-403, 1991 | 146 | 1991 |
| Continuum based modeling of silicon integrated circuit processing: An object oriented approach ME Law, SM Cea Computational Materials Science 12 (4), 289-308, 1998 | 134 | 1998 |
| Accurate measurements of the intrinsic diffusivities of boron and phosphorus in silicon YM Haddara, BT Folmer, ME Law, T Buyuklimanli Applied Physics Letters 77 (13), 1976-1978, 2000 | 119 | 2000 |
| Verification of analytic point defect models using SUPREM-IV (dopant diffusion) ME Law, RW Dutton IEEE transactions on computer-aided design of integrated circuits and …, 1988 | 97 | 1988 |
| The effect of impurities on diffusion and activation of ion implanted boron in silicon LS Robertson, R Brindos, KS Jones, ME Law, DF Downey, S Falk, J Liu MRS Online Proceedings Library (OPL) 610, B5. 8, 2000 | 95 | 2000 |
| A Quantitative Model for ELDRS andDegradation Effects in Irradiated Oxides Based on First Principles Calculations NL Rowsey, ME Law, RD Schrimpf, DM Fleetwood, BR Tuttle, ... IEEE Transactions on Nuclear Science 58 (6), 2937-2944, 2011 | 84 | 2011 |
| SUPREM-IV user’s manual ME Law, CS Rafferty, RW Dutton Standford University, 1988 | 76 | 1988 |
| Effects of hydrostatic pressure on dopant diffusion in silicon H Park, KS Jones, JA Slinkman, ME Law Journal of applied physics 78 (6), 3664-3670, 1995 | 75 | 1995 |
| Perspective on flipping circuits I GJ Kim, EE Patrick, R Srivastava, ME Law IEEE Transactions on Education 57 (3), 188-192, 2014 | 69 | 2014 |
| ColdFlux superconducting EDA and TCAD tools project: Overview and progress CJ Fourie, K Jackman, MM Botha, S Razmkhah, P Febvre, CL Ayala, Q Xu, ... IEEE Transactions on Applied Superconductivity 29 (5), 1-7, 2019 | 68 | 2019 |
| Reliability studies of AlGaN/GaN high electron mobility transistors DJ Cheney, EA Douglas, L Liu, CF Lo, YY Xi, BP Gila, F Ren, D Horton, ... Semiconductor Science and Technology 28 (7), 074019, 2013 | 67 | 2013 |
| Point defect based modeling of low dose silicon implant damage and oxidation effects on phosphorus and boron diffusion in silicon H Park, ME Law Journal of applied physics 72 (8), 3431-3439, 1992 | 64 | 1992 |
| Diffusion of ion implanted boron in preamorphized silicon KS Jones, LH Zhang, V Krishnamoorthy, M Law, DS Simons, P Chi, ... Applied physics letters 68 (19), 2672-2674, 1996 | 63 | 1996 |
| Stressed multidirectional solid-phase epitaxial growth of Si NG Rudawski, KS Jones, S Morarka, ME Law, RG Elliman Journal of Applied Physics 105 (8), 2009 | 60 | 2009 |
| Fluorine-enhanced boron diffusion in amorphous silicon JM Jacques, LS Robertson, KS Jones, ME Law, M Rendon, J Bennett Applied physics letters 82 (20), 3469-3471, 2003 | 54 | 2003 |
| Simulation of oxide trapping noise in submicron n-channel MOSFETs FC Hou, G Bosman, ME Law IEEE Transactions on Electron Devices 50 (3), 846-852, 2003 | 51 | 2003 |
| Diffusion of implanted nitrogen in silicon L Shaik Adam, ME Law, KS Jones, O Dokumaci, CS Murthy, S Hegde Journal of Applied Physics 87 (5), 2282-2284, 2000 | 50 | 2000 |
| The effects of proton-defect interactions on radiation-induced interface-trap formation and annealing DR Hughart, RD Schrimpf, DM Fleetwood, NL Rowsey, ME Law, BR Tuttle, ... IEEE Transactions on Nuclear Science 59 (6), 3087-3092, 2012 | 49 | 2012 |
Kevin S. JonesProfessor, University of Florida在 eng.ufl.edu 的电子邮件经过验证
