| Surfactants in epitaxial growth M Copel, MC Reuter, E Kaxiras, RM Tromp Physical review letters 63 (6), 632, 1989 | 1404 | 1989 |
| Structure and stability of ultrathin zirconium oxide layers on Si (001) M Copel, M Gribelyuk, E Gusev Applied Physics Letters 76 (4), 436-438, 2000 | 946 | 2000 |
| High-mobility ultrathin semiconducting films prepared by spin coating DB Mitzi, LL Kosbar, CE Murray, M Copel, A Afzali Nature 428 (6980), 299-303, 2004 | 644 | 2004 |
| High-resolution depth profiling in ultrathin films on Si EP Gusev, M Copel, E Cartier, IJR Baumvol, C Krug, MA Gribelyuk Applied Physics Letters 76 (2), 176-178, 2000 | 516 | 2000 |
| Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues EP Gusev, E Cartier, DA Buchanan, M Gribelyuk, M Copel, ... Microelectronic Engineering 59 (1-4), 341-349, 2001 | 508 | 2001 |
| Influence of surfactants in Ge and Si epitaxy on Si (001) M Copel, MC Reuter, MH Von Hoegen, RM Tromp Physical Review B 42 (18), 11682, 1990 | 427* | 1990 |
| Atomic beam deposition of lanthanum-and yttrium-based oxide thin films for gate dielectrics S Guha, E Cartier, MA Gribelyuk, NA Bojarczuk, MC Copel Applied Physics Letters 77 (17), 2710-2712, 2000 | 422 | 2000 |
| Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications EP Gusev, C Cabral Jr, M Copel, C D’emic, M Gribelyuk Microelectronic Engineering 69 (2-4), 145-151, 2003 | 403 | 2003 |
| Ultrathin high-K gate stacks for advanced CMOS devices EP Gusev, DA Buchanan, E Cartier, A Kumar, D DiMaria, S Guha, ... International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001 | 389 | 2001 |
| Band alignment at the Cu2ZnSn (SxSe1− x) 4/CdS interface R Haight, A Barkhouse, O Gunawan, B Shin, M Copel, M Hopstaken, ... Applied Physics Letters 98 (25), 2011 | 331 | 2011 |
| Formation of a stratified lanthanum silicate dielectric by reaction with Si (001) M Copel, E Cartier, FM Ross Applied Physics Letters 78 (11), 1607-1609, 2001 | 320 | 2001 |
| Defect self-annihilation in surfactant-mediated epitaxial growth M Horn-von Hoegen, FK LeGoues, M Copel, MC Reuter, RM Tromp Physical review letters 67 (9), 1130, 1991 | 312 | 1991 |
| Microstructure and strain relief of Ge films grown layer by layer on Si (001) FK LeGoues, M Copel, RM Tromp Physical Review B 42 (18), 11690, 1990 | 227 | 1990 |
| Structure of Au (110) determined with medium-energy-ion scattering M Copel, T Gustafsson Physical review letters 57 (6), 723, 1986 | 193 | 1986 |
| Highly efficient fluorescence quenching with graphene A Kasry, AA Ardakani, GS Tulevski, B Menges, M Copel, L Vyklicky The Journal of Physical Chemistry C 116 (4), 2858-2862, 2012 | 189 | 2012 |
| Defects in Cu(In,Ga)Se2 Chalcopyrite Semiconductors: A Comparative Study of Material Properties, Defect States, and Photovoltaic Performance Q Cao, O Gunawan, M Copel, KB Reuter, SJ Chey, VR Deline, DB Mitzi Advanced Energy Materials 1 (5), 845-853, 2011 | 179 | 2011 |
| Hafnium oxide gate dielectrics on sulfur-passivated germanium MM Frank, SJ Koester, M Copel, JA Ott, VK Paruchuri, H Shang, ... Applied physics letters 89 (11), 2006 | 175 | 2006 |
| H coverage dependence of Si (001) homoepitaxy M Copel, RM Tromp Physical review letters 72 (8), 1236, 1994 | 175 | 1994 |
| Robustness of ultrathin aluminum oxide dielectrics on Si (001) M Copel, E Cartier, EP Gusev, S Guha, N Bojarczuk, M Poppeller Applied Physics Letters 78 (18), 2670-2672, 2001 | 173 | 2001 |
| Novel strain-induced defect in thin molecular-beam epitaxy layers FK LeGoues, M Copel, R Tromp Physical review letters 63 (17), 1826, 1989 | 169 | 1989 |
Rudolf TrompIBM T.J. Watson Research Center / Leiden University在 us.ibm.com 的电子邮件经过验证
