| p-type doping of MoS2 thin films using Nb MR Laskar, DN Nath, L Ma, EW Lee, CH Lee, T Kent, Z Yang, R Mishra, ... Applied Physics Letters 104 (9), 2014 | 345 | 2014 |
| Large area single crystal (0001) oriented MoS2 MR Laskar, L Ma, S Kannappan, P Sung Park, S Krishnamoorthy, ... Applied Physics Letters 102 (25), 2013 | 271 | 2013 |
| High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector A Singh Pratiyush, S Krishnamoorthy, S Vishnu Solanke, Z Xia, ... Applied Physics Letters 110 (22), 2017 | 253 | 2017 |
| Electrical properties of atomic layer deposited aluminum oxide on gallium nitride M Esposto, S Krishnamoorthy, DN Nath, S Bajaj, TH Hung, S Rajan Applied Physics Letters 99 (13), 2011 | 205 | 2011 |
| Polarization-engineered GaN/InGaN/GaN tunnel diodes S Krishnamoorthy, DN Nath, F Akyol, PS Park, M Esposto, S Rajan Applied Physics Letters 97 (20), 2010 | 193 | 2010 |
| Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes F Akyol, DN Nath, S Krishnamoorthy, PS Park, S Rajan Applied Physics Letters 100 (11), 2012 | 177 | 2012 |
| N-polar III–nitride green (540 nm) light emitting diode F Akyol, DN Nath, E Gür, PS Park, S Rajan Japanese Journal of Applied Physics 50 (5R), 052101, 2011 | 105 | 2011 |
| Interface charge engineering for enhancement-mode GaN MISHEMTs TH Hung, PS Park, S Krishnamoorthy, DN Nath, S Rajan IEEE Electron Device Letters 35 (3), 312-314, 2014 | 103 | 2014 |
| Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces TH Hung, S Krishnamoorthy, M Esposto, D Neelim Nath, P Sung Park, ... Applied Physics Letters 102 (7), 2013 | 103 | 2013 |
| Demonstration of high-responsivity epitaxial β-Ga2O3/GaN metal–heterojunction-metal broadband UV-A/UV-C detector A Kalra, S Vura, S Rathkanthiwar, R Muralidharan, S Raghavan, DN Nath Applied Physics Express 11 (6), 064101, 2018 | 101 | 2018 |
| Gain mechanism and carrier transport in high responsivity AlGaN-based solar blind metal semiconductor metal photodetectors S Rathkanthiwar, A Kalra, SV Solanke, N Mohta, R Muralidharan, ... Journal of Applied Physics 121 (16), 2017 | 98 | 2017 |
| Molecular beam epitaxy of N-polar InGaN DN Nath, E Gür, SA Ringel, S Rajan Applied Physics Letters 97 (7), 2010 | 88 | 2010 |
| Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector AS Pratiyush, S Krishnamoorthy, S Kumar, Z Xia, R Muralidharan, ... Japanese Journal of Applied Physics 57 (6), 060313, 2018 | 80 | 2018 |
| Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage S Bajaj, TH Hung, F Akyol, D Nath, S Rajan Applied Physics Letters 105 (26), 2014 | 77 | 2014 |
| Epitaxial growth of large area single-crystalline few-layer MoS2 with high space charge mobility of 192 cm2 V− 1 s− 1 L Ma, DN Nath, EW Lee, CH Lee, M Yu, A Arehart, S Rajan, Y Wu Applied Physics Letters 105 (7), 2014 | 77 | 2014 |
| Unipolar vertical transport in GaN/AlGaN/GaN heterostructures DN Nath, ZC Yang., CY Lee, PS Park, YR Wu, S Rajan Applied Physics Letters 103 (2), 022102-022105, 2013 | 67 | 2013 |
| Advances in Ga2O3 solar-blind UV photodetectors AS Pratiyush, S Krishnamoorthy, R Muralidharan, S Rajan, DN Nath Gallium oxide, 369-399, 2019 | 65 | 2019 |
| Electron gas dimensionality engineering in AlGaN/GaN high electron mobility transistors using polarization P Sung Park, DN Nath, S Krishnamoorthy, S Rajan Applied Physics Letters 100 (6), 2012 | 63 | 2012 |
| MBE-Grown-Ga2O3-Based Schottky UV-C Photodetectors With Rectification Ratio ~107 AS Pratiyush, Z Xia, S Kumar, Y Zhang, C Joishi, R Muralidharan, S Rajan, ... IEEE Photonics Technology Letters 30 (23), 2025-2028, 2018 | 61 | 2018 |
| Surface State Engineering of Metal/MoS2Contacts Using Sulfur Treatment for Reduced Contact Resistance and Variability S Bhattacharjee, KL Ganapathi, DN Nath, N Bhat IEEE Transactions on Electron Devices 63 (6), 2556-2562, 2016 | 59 | 2016 |
