受强制性开放获取政策约束的文章 - Ke Zeng了解详情
无法在其他位置公开访问的文章：11 篇
Vertical Ga2O3 MOSFET With Magnesium Diffused Current Blocking Layer
K Zeng, R Soman, Z Bian, S Jeong, S Chowdhury
IEEE Electron Device Letters 43 (9), 1527-1530, 2022
强制性开放获取政策： Swiss National Science Foundation
Designing Beveled Edge Termination in GaN Vertical pin Diode-Bevel Angle, Doping, and Passivation
K Zeng, S Chowdhury
IEEE Transactions on Electron Devices 67 (6), 2457-2462, 2020
强制性开放获取政策： US Department of Energy, US Department of Defense
2.8 kV Avalanche in Vertical GaN PN Diode Utilizing Field Plate on Hydrogen Passivated P-Layer
Z Bian, K Zeng, S Chowdhury
IEEE Electron Device Letters 43 (4), 596-599, 2022
强制性开放获取政策： Swiss National Science Foundation, US Department of Defense
Modeling and power loss evaluation of ultra wide band gap Ga2O3 device for high power applications
I Lee, A Kumar, K Zeng, U Singisetti, X Yao
Energy Conversion Congress and Exposition (ECCE), 2017 IEEE, 4377-4382, 2017
强制性开放获取政策： US National Science Foundation
Mixed-mode circuit simulation to characterize Ga2O3 MOSFETs in different device structures
I Lee, A Kumar, K Zeng, U Singisetti, X Yao
2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2017
强制性开放获取政策： US National Science Foundation
Study on Avalanche Uniformity in 1.2 KV GaN Vertical PIN Diode with Bevel Edge-Termination
K Zeng, S Chowdhury, B Gunning, R Kaplar, T Anderson
2021 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2021
强制性开放获取政策： US Department of Energy, US Department of Defense
Simultaneous drive-in of Mg and disassociation of Mg-H complex in Ga2O3 by oxygen annealing achieving remarkable current blocking
K Zeng, Z Bian, N Sinha, S Chowdhury
Applied Physics Letters 124 (21), 2024
强制性开放获取政策： Swiss National Science Foundation
Temperature dependent characterization of Ga2O3MOSFETs with Spin-on-Glass source/drain doping
K Zeng, U Singisetti
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
强制性开放获取政策： US National Science Foundation
Movement of Current Filaments and its Impact on Avalanche Robustness in Vertical GaN PN diode Under UIS stress
B Shankar, K Zeng, B Gunning, RP Martinez, C Meng, J Flicker, A Binder, ...
2022 Device Research Conference (DRC), 1-2, 2022
强制性开放获取政策： US Department of Energy, US Department of Defense
Comparison of field plated and non-field plated Schottky barrier diodes in HVPE grown -Ga2O3
S Sharma, K Zeng, A Vaidya, U Singisetti
2019 Device Research Conference (DRC), 151-152, 2019
强制性开放获取政策： US National Science Foundation
(Invited) Recent Progress in Medium-Voltage Vertical GaN Power Devices
L Yates, AT Binder, A Rice, AM Armstrong, J Steinfeldt, VM Abate, ...
Electrochemical Society Meeting Abstracts 244, 1682-1682, 2023
强制性开放获取政策： US Department of Energy
可在其他位置公开访问的文章：15 篇
1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3MOSFETs
K Zeng, A Vaidya, U Singisetti
IEEE Electron Device Letters 39 (9), 1385-1388, 2018
强制性开放获取政策： US National Science Foundation
Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage
S Sharma, K Zeng, S Saha, U Singisetti
IEEE Electron Device Letters 41 (6), 836-839, 2020
强制性开放获取政策： US National Science Foundation, US Department of Defense
Ga2O3 MOSFETs Using Spin-On-Glass Source/Drain Doping Technology
K Zeng, JS Wallace, C Heimburger, K Sasaki, A Kuramata, T Masui, ...
IEEE Electron Device Letters 38 (4), 513-516, 2017
强制性开放获取政策： US National Science Foundation
Device-Level thermal management of gallium oxide field-effect transistors
B Chatterjee, K Zeng, CD Nordquist, U Singisetti, S Choi
IEEE Transactions on Components, Packaging and Manufacturing Technology 9 …, 2019
强制性开放获取政策： US National Science Foundation, US Department of Energy, US Department of …
A field-plated Ga2O3 MOSFET with near 2-kV breakdown voltage and 520 mΩ· cm2 on-resistance
K Zeng, A Vaidya, U Singisetti
Applied Physics Express 12 (8), 081003, 2019
强制性开放获取政策： US National Science Foundation
Flexible β‐Ga2O3 Nanomembrane Schottky Barrier Diodes
E Swinnich, MN Hasan, K Zeng, Y Dove, U Singisetti, B Mazumder, ...
Advanced Electronic Materials 5 (3), 1800714, 2019
强制性开放获取政策： US National Science Foundation
Temperature dependent quasi-static capacitance-voltage characterization of SiO2/β-Ga2O3 interface on different crystal orientations
K Zeng, U Singisetti
Applied Physics Letters 111 (12), 2017
强制性开放获取政策： US National Science Foundation
Interface characterization of atomic layer deposited high-k on non-polar GaN
Y Jia, K Zeng, U Singisetti
Journal of Applied Physics 122 (15), 2017
强制性开放获取政策： US Department of Defense
Development of High-Voltage Vertical GaN PN Diodes
RJ Kaplar, BP Gunning, AA Allerman, MH Crawford, JD Flicker, ...
2020 IEEE International Electron Devices Meeting (IEDM), 5.1. 1-5.1. 4, 2020
强制性开放获取政策： US Department of Energy, US Department of Defense
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