| Achieving remarkable activity and durability toward oxygen reduction reaction based on ultrathin Rh-doped Pt nanowires H Huang, K Li, Z Chen, L Luo, Y Gu, D Zhang, C Ma, R Si, J Yang, Z Peng, ... Journal of the American Chemical Society 139 (24), 8152-8159, 2017 | 282 | 2017 |
| A library of atomically thin 2D materials featuring the conductive‐point resistive switching phenomenon R Ge, X Wu, L Liang, SM Hus, Y Gu, E Okogbue, H Chou, J Shi, Y Zhang, ... Advanced Materials 33 (7), 2007792, 2021 | 100 | 2021 |
| Black phosphorus mid-infrared photodetectors M Xu, Y Gu, R Peng, N Youngblood, M Li Applied Physics B 123, 1-5, 2017 | 44 | 2017 |
| Electron irradiation-induced defects for reliability improvement in monolayer MoS2-based conductive-point memory devices X Wu, Y Gu, R Ge, MI Serna, Y Huang, JC Lee, D Akinwande npj 2D Materials and Applications 6 (1), 31, 2022 | 29 | 2022 |
| Sulfurization Engineering of One‐Step Low‐Temperature MoS2 and WS2 Thin Films for Memristor Device Applications Y Gu, MI Serna, S Mohan, A Londoño‐Calderon, T Ahmed, Y Huang, ... Advanced Electronic Materials 8 (2), 2100515, 2022 | 24 | 2022 |
| Reliability Improvement and Effective Switching Layer Model of Thin‐Film MoS2 Memristors Y Huang, Y Gu, S Mohan, A Dolocan, ND Ignacio, S Kutagulla, ... Advanced Functional Materials 34 (15), 2214250, 2024 | 21 | 2024 |
| Electron redistribution and energy transfer in graphene/MoS2 heterostructure W Lin, P Zhuang, H Chou, Y Gu, R Roberts, W Li, SK Banerjee, W Cai, ... Applied Physics Letters 114 (11), 2019 | 18 | 2019 |
| ReSe2-Based RRAM and Circuit-Level Model for Neuromorphic Computing Y Huang, Y Gu, X Wu, R Ge, YF Chang, X Wang, J Zhang, D Akinwande, ... Frontiers in Nanotechnology 3, 782836, 2021 | 13 | 2021 |
| Comparative Study between Sulfurized MoS2 from Molybdenum and Molybdenum Trioxide Precursors for Thin-Film Device Applications S Fatima, Y Gu, SJ Yang, S Kutagulla, S Rizwan, D Akinwande ACS Applied Materials & Interfaces 15 (12), 16308-16316, 2023 | 4 | 2023 |
| On the stochastic nature of conductive points formation and their effects on reliability of MoS2 RRAM: Experimental characterization and Monte Carlo simulation Y Huang, X Wu, Y Gu, R Ge, D Akinwande, JC Lee Microelectronics Reliability 126, 114274, 2021 | 4 | 2021 |
| Understanding the resistive switching mechanism of 2-D RRAM: Monte Carlo modeling and a proposed application for reliability research Y Huang, Y Gu, YF Chang, YC Chen, D Akinwande, JC Lee IEEE Transactions on Electron Devices 70 (4), 1676-1681, 2023 | 3 | 2023 |
| Universal Non-Volatile Resistive Switching Behavior in 2D Metal Dichalcogenides Featuring Unique Conductive-Point Random Access Memory Effect X Wu, R Ge, Y Gu, E Okogbue, J Shi, A Shivayogimath, P Bøggild, ... 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2021 | 3 | 2021 |
| Volatile and Nonvolatile Resistive Switching Coexistence in Conductive Point Hexagonal Boron Nitride Monolayer SJ Yang, L Liang, Y Lee, Y Gu, J Fatheema, S Kutagulla, D Kim, M Kim, ... ACS nano 18 (4), 3313-3322, 2024 | 2 | 2024 |
| Direct Metal-Free Growth and Dry Separation of Bilayer Graphene on Sapphire: Implications for Electronic Applications S Mohan, D Kireev, S Kutagulla, N Ignacio, Y Gu, H Celio, X Zhan, ... ACS Applied Nano Materials 6 (20), 19018-19028, 2023 | 2 | 2023 |
| Light-driven CH bond activation mediated by 2D transition metal dichalcogenides J Li, D Zhang, Z Guo, X Jiang, JM Larson, H Zhu, T Zhang, Y Gu, ... arXiv preprint arXiv:2208.07902, 2022 | 1 | 2022 |
| 2D RRAM and Verilog-A model for Neuromorphic Computing Y Huang, X Wu, Y Gu, R Ge, J Zhang, YF Chang, D Akinwande, JC Lee 2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC), 1-4, 2021 | 1 | 2021 |
| Light-driven CH activation mediated by 2D transition metal dichalcogenides J Li, D Zhang, Z Guo, X Jiang, JM Larson, H Zhu, T Zhang, Y Gu, ... Research Square, 2024 | | 2024 |
| Multifunctional Resistance Switching in Monolayer Hexagonal Boron Nitride Atomristor SJ Yang, Y Gu, D Akinwande 2023 Device Research Conference (DRC), 1-2, 2023 | | 2023 |
| Understand the Resistive Switching and Reliability Mechanisms of 2D TMD Material: Defect Engineering, Finite Element Analysis and Monte Carlo Modeling Y Huang, Y Gu, X Wu, R Ge, YF Chang, YC Chen, D Akinwande, J Lee APS March Meeting Abstracts 2023, T00. 253, 2023 | | 2023 |
| Growth and defect engineering of two-dimensional materials for memristor improvement Y Gu | | 2022 |
