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Yuqian  Gu
Yuqian Gu
在 utexas.edu 的电子邮件经过验证
标题
引用次数
引用次数
年份
Achieving remarkable activity and durability toward oxygen reduction reaction based on ultrathin Rh-doped Pt nanowires
H Huang, K Li, Z Chen, L Luo, Y Gu, D Zhang, C Ma, R Si, J Yang, Z Peng, ...
Journal of the American Chemical Society 139 (24), 8152-8159, 2017
2822017
A library of atomically thin 2D materials featuring the conductive‐point resistive switching phenomenon
R Ge, X Wu, L Liang, SM Hus, Y Gu, E Okogbue, H Chou, J Shi, Y Zhang, ...
Advanced Materials 33 (7), 2007792, 2021
1002021
Black phosphorus mid-infrared photodetectors
M Xu, Y Gu, R Peng, N Youngblood, M Li
Applied Physics B 123, 1-5, 2017
442017
Electron irradiation-induced defects for reliability improvement in monolayer MoS2-based conductive-point memory devices
X Wu, Y Gu, R Ge, MI Serna, Y Huang, JC Lee, D Akinwande
npj 2D Materials and Applications 6 (1), 31, 2022
292022
Sulfurization Engineering of One‐Step Low‐Temperature MoS2 and WS2 Thin Films for Memristor Device Applications
Y Gu, MI Serna, S Mohan, A Londoño‐Calderon, T Ahmed, Y Huang, ...
Advanced Electronic Materials 8 (2), 2100515, 2022
242022
Reliability Improvement and Effective Switching Layer Model of Thin‐Film MoS2 Memristors
Y Huang, Y Gu, S Mohan, A Dolocan, ND Ignacio, S Kutagulla, ...
Advanced Functional Materials 34 (15), 2214250, 2024
212024
Electron redistribution and energy transfer in graphene/MoS2 heterostructure
W Lin, P Zhuang, H Chou, Y Gu, R Roberts, W Li, SK Banerjee, W Cai, ...
Applied Physics Letters 114 (11), 2019
182019
ReSe2-Based RRAM and Circuit-Level Model for Neuromorphic Computing
Y Huang, Y Gu, X Wu, R Ge, YF Chang, X Wang, J Zhang, D Akinwande, ...
Frontiers in Nanotechnology 3, 782836, 2021
132021
Comparative Study between Sulfurized MoS2 from Molybdenum and Molybdenum Trioxide Precursors for Thin-Film Device Applications
S Fatima, Y Gu, SJ Yang, S Kutagulla, S Rizwan, D Akinwande
ACS Applied Materials & Interfaces 15 (12), 16308-16316, 2023
42023
On the stochastic nature of conductive points formation and their effects on reliability of MoS2 RRAM: Experimental characterization and Monte Carlo simulation
Y Huang, X Wu, Y Gu, R Ge, D Akinwande, JC Lee
Microelectronics Reliability 126, 114274, 2021
42021
Understanding the resistive switching mechanism of 2-D RRAM: Monte Carlo modeling and a proposed application for reliability research
Y Huang, Y Gu, YF Chang, YC Chen, D Akinwande, JC Lee
IEEE Transactions on Electron Devices 70 (4), 1676-1681, 2023
32023
Universal Non-Volatile Resistive Switching Behavior in 2D Metal Dichalcogenides Featuring Unique Conductive-Point Random Access Memory Effect
X Wu, R Ge, Y Gu, E Okogbue, J Shi, A Shivayogimath, P Bøggild, ...
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2021
32021
Volatile and Nonvolatile Resistive Switching Coexistence in Conductive Point Hexagonal Boron Nitride Monolayer
SJ Yang, L Liang, Y Lee, Y Gu, J Fatheema, S Kutagulla, D Kim, M Kim, ...
ACS nano 18 (4), 3313-3322, 2024
22024
Direct Metal-Free Growth and Dry Separation of Bilayer Graphene on Sapphire: Implications for Electronic Applications
S Mohan, D Kireev, S Kutagulla, N Ignacio, Y Gu, H Celio, X Zhan, ...
ACS Applied Nano Materials 6 (20), 19018-19028, 2023
22023
Light-driven CH bond activation mediated by 2D transition metal dichalcogenides
J Li, D Zhang, Z Guo, X Jiang, JM Larson, H Zhu, T Zhang, Y Gu, ...
arXiv preprint arXiv:2208.07902, 2022
12022
2D RRAM and Verilog-A model for Neuromorphic Computing
Y Huang, X Wu, Y Gu, R Ge, J Zhang, YF Chang, D Akinwande, JC Lee
2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC), 1-4, 2021
12021
Light-driven CH activation mediated by 2D transition metal dichalcogenides
J Li, D Zhang, Z Guo, X Jiang, JM Larson, H Zhu, T Zhang, Y Gu, ...
Research Square, 2024
2024
Multifunctional Resistance Switching in Monolayer Hexagonal Boron Nitride Atomristor
SJ Yang, Y Gu, D Akinwande
2023 Device Research Conference (DRC), 1-2, 2023
2023
Understand the Resistive Switching and Reliability Mechanisms of 2D TMD Material: Defect Engineering, Finite Element Analysis and Monte Carlo Modeling
Y Huang, Y Gu, X Wu, R Ge, YF Chang, YC Chen, D Akinwande, J Lee
APS March Meeting Abstracts 2023, T00. 253, 2023
2023
Growth and defect engineering of two-dimensional materials for memristor improvement
Y Gu
2022
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