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Chen Wu 吴晨
Chen Wu 吴晨
在 imec.be 的电子邮件经过验证
标题
引用次数
引用次数
年份
Reliability study on cobalt and ruthenium as alternative metals for advanced interconnects
OV Pedreira, K Croes, A Leśniewska, C Wu, MH Van Der Veen, ...
2017 IEEE International Reliability Physics Symposium (IRPS), 6B-2.1-6B-2.8, 2017
742017
Interconnect metals beyond copper: reliability challenges and opportunities
K Croes, C Adelmann, CJ Wilson, H Zahedmanesh, OV Pedreira, C Wu, ...
2018 IEEE International Electron Devices Meeting (IEDM), 5.3. 1-5.3. 4, 2018
692018
Electrical reliability challenges of advanced low-k dielectrics
C Wu, Y Li, MR Baklanov, K Croes
ECS Journal of Solid State Science and Technology 4 (1), N3065, 2014
642014
Mechanical stability of porous low-k dielectrics
K Vanstreels, C Wu, MR Baklanov
ECS Journal of Solid State Science and Technology 4 (1), N3058, 2014
592014
Effect of pore structure of nanometer scale porous films on the measured elastic modulus
K Vanstreels, C Wu, M Gonzalez, D Schneider, D Gidley, P Verdonck, ...
Langmuir 29 (38), 12025-12035, 2013
552013
Low field TDDB of BEOL interconnects using> 40 months of data
K Croes, P Roussel, Y Barbarin, C Wu, Y Li, J Bömmels, Z Tőkei
2013 IEEE International Reliability Physics Symposium (IRPS), 2F. 4.1-2F. 4.8, 2013
422013
Current understanding of BEOL TDDB lifetime models
K Croes, C Wu, D Kocaay, Y Li, P Roussel, J Boemmels, Z Tőkei
ECS Journal of Solid State Science and Technology 4 (1), N3094, 2014
392014
Current understanding of BEOL TDDB lifetime models
K Croes, C Wu, D Kocaay, Y Li, P Roussel, J Boemmels, Z Tőkei
ECS Journal of Solid State Science and Technology 4 (1), N3094, 2014
392014
Intrinsic effect of porosity on mechanical and fracture properties of nanoporous ultralow-k dielectrics
K Vanstreels, C Wu, P Verdonck, MR Baklanov
Applied Physics Letters 101 (12), 2012
352012
Testing The Limits of TaN Barrier Scaling
C Witt, KB Yeap, A Leśniewska, D Wan, N Jordan, I Ciofi, C Wu, Z Tokei
2018 IEEE International Interconnect Technology Conference (IITC), 54-56, 2018
322018
Towards the Understanding of Intrinsic Degradation and Breakdown Mechanisms of a SiOCH Low-k Dielectric
C Wu, Y Li, Y Barbarin, I Ciofi, B Tang, T Kauerauf, K Croes, J Bömmels, ...
Reliability Physics Symposium (IRPS), 2014 IEEE International, 3A-2-1-3A-2-6, 2014
232014
Bonding pads including interfacial electromigration barrier layers and methods of making the same
C Wu, P Rabkin, M Higashitani
US Patent 11,270,963, 2022
152022
Bonded assembly containing horizontal and vertical bonding interfaces and methods of forming the same
C Wu, P Rabkin, M Higashitani
US Patent 11,088,116, 2021
152021
Bonded die assembly containing partially filled through-substrate via structures and methods for making the same
C Wu, P Rabkin, Y Chen, M Higashitani
US Patent 11,037,908, 2021
152021
Bonded assembly containing a dielectric bonding pattern definition layer and methods of forming the same
C Wu, P Rabkin, Y Chen, M Higashitani
US Patent 11,094,653, 2021
142021
Correlation between stress-induced leakage current and dielectric degradation in ultra-porous SiOCH low-k materials
C Wu, Y Li, A Leśniewska, O Varela Pedreira, JF de Marneffe, I Ciofi, ...
Journal of Applied Physics 118 (16), 2015
142015
Correlation between field dependent electrical conduction and dielectric breakdown in a SiCOH based low-k (k= 2.0) dielectric
C Wu, Y Li, Y Barbarin, I Ciofi, K Croes, J Bömmels, I De Wolf, Z Tőkei
Applied Physics Letters 103 (3), 2013
142013
Bonded die assembly containing a manganese-containing oxide bonding layer and methods for making the same
C Wu, P Rabkin, M Higashitani
US Patent 11,362,079, 2022
132022
Insights into metal drift induced failure in MOL and BEOL
C Wu, OV Pedreira, A Leśniewska, Y Li, I Ciofi, Z Tőkei, K Croes
2018 IEEE International Reliability Physics Symposium (IRPS), 3A. 1-1-3A. 1-7, 2018
132018
Hydrogen outgassing induced liner/barrier reliability degradation in through silicon via's
Y Li, Y Oba, C Wu, S Van Huylenbroeck, E Van Besien, G Vereecke, ...
Applied physics letters 104 (14), 2014
132014
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