| Analysis of the bipolar resistive switching behavior of a biocompatible glucose film for resistive random access memory SP Park, YJ Tak, HJ Kim, JH Lee, H Yoo, HJ Kim Advanced Materials 30 (26), 1800722, 2018 | 100 | 2018 |
| Activation of sputter-processed indium–gallium–zinc oxide films by simultaneous ultraviolet and thermal treatments YJ Tak, B Du Ahn, SP Park, SJ Kim, AR Song, KB Chung, HJ Kim Scientific reports 6 (1), 21869, 2016 | 91 | 2016 |
| Low-temperature fabrication of an HfO2 passivation layer for amorphous indium–gallium–zinc oxide thin film transistors using a solution process S Hong, SP Park, Y Kim, BH Kang, JW Na, HJ Kim Scientific reports 7 (1), 16265, 2017 | 57 | 2017 |
| Flexible and waterproof resistive random‐access memory based on nitrocellulose for skin‐attachable wearable devices JH Lee, SP Park, K Park, HJ Kim Advanced Functional Materials 30 (1), 1907437, 2020 | 54 | 2020 |
| Gallium doping effects for improving switching performance of p-type copper (I) oxide thin-film transistors JH Bae, JH Lee, SP Park, TS Jung, HJ Kim, D Kim, SW Lee, KS Park, ... ACS applied materials & interfaces 12 (34), 38350-38356, 2020 | 45 | 2020 |
| Reduction of activation temperature at 150° C for IGZO films with improved electrical performance via UV-thermal treatment YJ Tak, SP Park, TS Jung, H Lee, WG Kim, JW Park, HJ Kim Journal of Information Display 17 (2), 73-78, 2016 | 34 | 2016 |
| Switching enhancement via a back-channel phase-controlling layer for p-type copper oxide thin-film transistors WK Min, SP Park, HJ Kim, JH Lee, K Park, D Kim, KW Kim, HJ Kim ACS applied materials & interfaces 12 (22), 24929-24939, 2020 | 33 | 2020 |
| The self-activated radical doping effects on the catalyzed surface of amorphous metal oxide films HJ Kim, YJ Tak, SP Park, JW Na, Y Kim, S Hong, PH Kim, GT Kim, BK Kim, ... Scientific reports 7 (1), 12469, 2017 | 31 | 2017 |
| Enhancement of switching characteristic for p-type oxide semiconductors using hypochlorous acid TS Jung, H Lee, SP Park, HJ Kim, JH Lee, D Kim, HJ Kim ACS applied materials & interfaces 10 (38), 32337-32343, 2018 | 25 | 2018 |
| Structural engineering of metal-mesh structure applicable for transparent electrodes fabricated by self-formable cracked template Y Kim, YJ Tak, SP Park, HJ Kim, HJ Kim Nanomaterials 7 (8), 214, 2017 | 17 | 2017 |
| Modified stoichiometry in homogeneous indium–zinc oxide system as vertically graded oxygen deficiencies by controlling redox reactions YJ Tak, YS Rim, DH Yoon, SJ Kim, SP Park, H Lee, WG Kim, Y Yang, ... Advanced Materials Interfaces 3 (4), 1500606, 2016 | 12 | 2016 |
| Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnO x-based resistive random access memory devices SP Park, DH Yoon, YJ Tak, H Lee, HJ Kim Chemical Communications 51 (44), 9173-9176, 2015 | 12 | 2015 |
| Simultaneous engineering of the interface and bulk layer of Al/sol-NiO x/Si structured resistive random access memory devices DH Yoon, YJ Tak, SP Park, J Jung, H Lee, HJ Kim Journal of Materials Chemistry C 2 (30), 6148-6154, 2014 | 11 | 2014 |
| Glucose-based resistive random access memory for transient electronics SP Park, HJ Kim, JH Lee, HJ Kim Journal of Information Display 20 (4), 231-237, 2019 | 10 | 2019 |
| 14‐4L: Late‐News Paper: Self‐Pattern Process of InZnO Thin‐Film Transistors using Photosensitive Precursors HJ Kim, Y Kim, SP Park, D Kim, N Kim, JS Choi, HJ Kim SID Symposium Digest of Technical Papers 48 (1), 180-182, 2017 | 9 | 2017 |
| Improvement in electrical characteristics of eco-friendly indium zinc oxide thin-film transistors by photocatalytic reaction JK Kang, SP Park, JW Na, JH Lee, D Kim, HJ Kim ACS applied materials & interfaces 10 (22), 18837-18844, 2018 | 8 | 2018 |
| Interface location-controlled indium gallium zinc oxide thin-film transistors using a solution process JW Na, Y Kim, TS Jung, YJ Tak, SP Park, JW Park, SJ Kim, HJ Kim Journal of Physics D: Applied Physics 49 (8), 085301, 2016 | 8 | 2016 |
| Oxide thin film, method for post-treating oxide thin film and electronic apparatus HJ Kim, YJ Tak, DH Yoon, SP Park, H Lee US Patent 9,484,419, 2016 | 6 | 2016 |
| P‐18: Improving Switching Characteristics of p‐type Copper Oxide Thin‐film Transistors by Germanium Oxide Passivation through Reactive Sputtering WK Min, SP Park, TS Jung, HJ Kim, JH Lee, K Park, HJ Kim SID Symposium Digest of Technical Papers 50 (1), 1279-1282, 2019 | 1 | 2019 |
| P‐23: Fabrication of Eco‐Friendly Solution‐Processed Indium Zinc Oxide Thin‐Film Transistors through Recycling Based on Photocatalytic Reactions of TiO2 JK Kang, SP Park, JW Na, JH Lee, D Kim, JS Choi, HJ Kim SID Symposium Digest of Technical Papers 49 (1), 1264-1267, 2018 | 1 | 2018 |
Young Jun TakSK hynix在 sk.com 的电子邮件经过验证
