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Jun Lin
Jun Lin
Tyndall National Institute, University College Cork
在 tyndall.ie 的电子邮件经过验证
标题
引用次数
引用次数
年份
Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C
L Ansari, S Monaghan, N McEvoy, CÓ Coileáin, CP Cullen, J Lin, R Siris, ...
npj 2D Materials and Applications 3 (1), 33, 2019
802019
An investigation of capacitance-voltage hysteresis in metal/high-k/In0. 53Ga0. 47As metal-oxide-semiconductor capacitors
J Lin, YY Gomeniuk, S Monaghan, IM Povey, K Cherkaoui, É O'Connor, ...
Journal of Applied Physics 114 (14), 2013
672013
The Characterization and Passivation of Fixed Oxide Charges and Interface States in the MOS System
PK Hurley, É O'Connor, V Djara, S Monaghan, IM Povey, RD Long, ...
IEEE Transactions on Device and Materials Reliability 13 (4), 429-443, 2013
562013
A combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al2O3/In0. 53Ga0. 47As capacitor structures
J Lin, L Walsh, G Hughes, JC Woicik, IM Povey, TP O'Regan, PK Hurley
Journal of Applied Physics 116 (2), 2014
512014
Electrical and physical characterization of the Al2O3/p-GaSb interface for 1%, 5%, 10%, and 22%(NH4) 2S surface treatments
U Peralagu, IM Povey, P Carolan, J Lin, R Contreras-Guerrero, ...
Applied Physics Letters 105 (16), 2014
252014
Large-area growth of MoS2 at temperatures compatible with integrating back-end-of-line functionality
J Lin, S Monaghan, N Sakhuja, F Gity, RK Jha, EM Coleman, J Connolly, ...
2D Materials 8 (2), 025008, 2020
222020
Examining the relationship between capacitance-voltage hysteresis and accumulation frequency dispersion in InGaAs metal-oxide-semiconductor structures based on the response to …
J Lin, S Monaghan, K Cherkaoui, IM Povey, B Sheehan, PK Hurley
Microelectronic Engineering 178, 204-208, 2017
222017
The impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0. 53Ga0. 47As (110) metal-oxide-semiconductor capacitors
YC Fu, U Peralagu, DAJ Millar, J Lin, I Povey, X Li, S Monaghan, ...
Applied Physics Letters 110 (14), 2017
212017
A combined hard x-ray photoelectron spectroscopy and electrical characterisation study of metal/SiO2/Si (100) metal-oxide-semiconductor structures
LA Walsh, G Hughes, PK Hurley, J Lin, JC Woicik
Applied Physics Letters 101 (24), 2012
202012
A study of capacitance-voltage hysteresis in HfO2/InGaAs metal-oxide-semiconductor systems
J Lin, S Monaghan, K Cherkaoui, IM Pove, ÉO Connor, B Sheehan, ...
Microelectronic Engineering, 2015
182015
The role of oxide traps aligned with the semiconductor energy gap in MOS systems
E Caruso, J Lin, S Monaghan, K Cherkaoui, F Gity, P Palestri, D Esseni, ...
IEEE Transactions on Electron Devices 67 (10), 4372-4378, 2020
172020
Hard x-ray photoelectron spectroscopy and electrical characterization study of the surface potential in metal/AlO/GaAs(100) metal-oxide-semiconductor structures
LA Walsh, G Hughes, J Lin, PK Hurley, TP O’Regan, E Cockayne, ...
Physical Review B 88 (4), 045322, 2013
122013
Structural and electrical characterisation of PtS from H2S-converted Pt
S Monaghan, EM Coleman, L Ansari, J Lin, A Buttimer, PA Coleman, ...
Applied Materials Today 25, 101163, 2021
102021
Investigating positive oxide charge in the SiO2/3C-SiC MOS system
K Cherkaoui, A Blake, YY Gomeniuk, J Lin, B Sheehan, M White, ...
AIP Advances 8 (8), 2018
82018
Can metal/Al2O3/In0. 53Ga0. 47As/InP MOSCAP properties translate to metal/Al2O3/In0. 53Ga0. 47As/InP MOSFET characteristics
K Cherkaoui, V Djara, É O'Connor, J Lin, MA Negara, IM Povey, ...
ECS Transactions 45 (3), 79, 2012
52012
Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks
E Caruso, J Lin, KF Burke, K Cherkaoui, D Esseni, F Gity, S Monaghan, ...
2018 Joint International EUROSOI Workshop and International Conference on …, 2018
42018
Study of MoS2 Deposited by ALD on c-Si, Towards the Development of MoS2/c-Si Heterojunction Photovoltaics
BF Zerbo, M Modreanu, I Povey, J Lin, A Létoublon, A Rolland, ...
Crystals 12 (10), 1363, 2022
22022
Large Area Growth of MoS2 By Chemical Vapour Deposition
E Coleman, S Monaghan, F Gity, M Schmidt, J Connolly, J Lin, L Walsh, ...
Electrochemical Society Meeting Abstracts aimes2018, 708-708, 2018
22018
A spectroscopic method for the evaluation of surface passivation treatments on metal–oxide–semiconductor structures
LA Walsh, PK Hurley, J Lin, E Cockayne, TP O’Regan, JC Woicik, ...
Applied surface science 301, 40-45, 2014
22014
Towards vertical sidewalls in III-V FinFETs: dry etch processing and its associated damage on the electrical and physical properties of (100)-oriented InGaAs
O Ignatova, U Peralagu, X Li, M Steer, M Mirza, J Lin, I Povey, P Carolan, ...
44th IEEE Semicond. Interface Spec. Conf.(SISC), Arlington, VA, USA, 167-168, 2013
22013
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