| Hierarchical device simulation: the Monte-Carlo perspective C Jungemann, B Meinerzhagen Springer Science & Business Media, 2012 | 247 | 2012 |
| Impact ionization MOS (I-MOS)-part II: experimental results K Gopalakrishnan, R Woo, C Jungemann, PB Griffin, JD Plummer IEEE Transactions on Electron Devices 52 (1), 77-84, 2004 | 185 | 2004 |
| Simulation of linear and nonlinear electron transport in homogeneous silicon inversion layers C Jungemann, A Emunds, WL Engl Solid-state electronics 36 (11), 1529-1540, 1993 | 148 | 1993 |
| High-mobility low band-to-band-tunneling strained-germanium double-gate heterostructure FETs: Simulations T Krishnamohan, D Kim, CD Nguyen, C Jungemann, Y Nishi, ... IEEE Transactions on Electron Devices 53 (5), 1000-1009, 2006 | 125 | 2006 |
| Si/SiGe: C and InP/GaAsSb heterojunction bipolar transistors for THz applications P Chevalier, M Schröter, CR Bolognesi, V d'Alessandro, M Alexandrova, ... Proceedings of the IEEE 105 (6), 1035-1050, 2017 | 114 | 2017 |
| Physical and electrical performance limits of high-speed SiGeC HBTs—Part I: Vertical scaling M Schroter, G Wedel, B Heinemann, C Jungemann, J Krause, P Chevalier, ... IEEE Transactions on Electron Devices 58 (11), 3687-3696, 2011 | 105 | 2011 |
| Deterministic solvers for the Boltzmann transport equation SM Hong, AT Pham, C Jungemann Springer Science & Business Media, 2011 | 103 | 2011 |
| Stable discretization of the Boltzmann equation based on spherical harmonics, box integration, and a maximum entropy dissipation principle C Jungemann, AT Pham, B Meinerzhagen, C Ringhofer, M Bollhöfer Journal of applied physics 100 (2), 2006 | 101 | 2006 |
| A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon A Abramo, L Baudry, R Brunetti, R Castagne, M Charef, F Dessenne, ... IEEE Transactions on Electron Devices 41 (9), 1646-1654, 1994 | 90 | 1994 |
| Comparison of (001),(110) and (111) uniaxial-and biaxial-strained-Ge and strained-Si PMOS DGFETs for all channel orientations: Mobility enhancement, drive current, delay and … T Krishnamohan, D Kim, TV Dinh, A Pham, B Meinerzhagen, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 86 | 2008 |
| A fully coupled scheme for a Boltzmann-Poisson equation solver based on a spherical harmonics expansion SM Hong, C Jungemann Journal of computational electronics 8, 225-241, 2009 | 78 | 2009 |
| Physics-based modeling of hole inversion-layer mobility in strained-SiGe-on-insulator AT Pham, C Jungemann, B Meinerzhagen IEEE transactions on electron devices 54 (9), 2174-2182, 2007 | 74 | 2007 |
| Efficient full-band Monte Carlo simulation of silicon devices C Jungemann, S Keith, M Bartels, B Meinerzhagen IEICE transactions on electronics 82 (6), 870-879, 1999 | 71 | 1999 |
| Failure of moments-based transport models in nanoscale devices near equilibrium C Jungemann, T Grasser, B Neinhuus, B Meinerzhagen IEEE Transactions on Electron Devices 52 (11), 2404-2408, 2005 | 70 | 2005 |
| High-frequency noise in nanoscale metal oxide semiconductor field effect transistors R Navid, C Jungemann, TH Lee, RW Dutton Journal of applied physics 101 (12), 2007 | 61 | 2007 |
| Physics-based hot-carrier degradation modeling SE Tyaginov, I Starkov, H Enichlmair, JM Park, C Jungemann, T Grasser ECS Transactions 35 (4), 321, 2011 | 59 | 2011 |
| Hierarchical 2-D DD and HD noise simulations of Si and SiGe devices. I. Theory C Jungemann, B Neinhus, B Meinerzhagen IEEE Transactions on Electron Devices 49 (7), 1250-1257, 2002 | 58 | 2002 |
| Hierarchical 2-D DD and HD noise simulations of Si and SiGe devices II. Results C Jungemann, B Neinhus, S Decker, B Meinerzhagen IEEE Transactions on Electron Devices 49 (7), 1258-1264, 2002 | 54 | 2002 |
| KMC simulation of the electroforming, set and reset processes in redox-based resistive switching devices E Abbaspour, S Menzel, A Hardtdegen, S Hoffmann-Eifert, C Jungemann IEEE transactions on nanotechnology 17 (6), 1181-1188, 2018 | 47 | 2018 |
| Advanced transport models for sub-micrometer devices T Grasser, C Jungemann, H Kosina, B Meinerzhagen, S Selberherr Simulation of Semiconductor Processes and Devices 2004, 1-8, 2004 | 43 | 2004 |
