| E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs C Wang, M Hua, J Chen, S Yang, Z Zheng, J Wei, L Zhang, KJ Chen IEEE Electron Device Letters 41 (4), 545-548, 2020 | 54 | 2020 |
| OFF-State Drain-Voltage-Stress-Induced VTH Instability in Schottky-Type p-GaN Gate HEMTs J Chen, M Hua, J Wei, J He, C Wang, Z Zheng, KJ Chen IEEE Journal of Emerging and Selected Topics in Power Electronics 9 (3 …, 2020 | 49 | 2020 |
| E-mode p-GaN Gate HEMT with p-FET Bridge for Higher VTH and Enhanced VTH Stability M Hua, J Chen, C Wang, L Liu, L Li, J Zhao, Z Jiang, J Wei, L Zhang, ... 2020 IEEE International Electron Devices Meeting (IEDM), 23.1. 1-23.1. 4, 2020 | 27 | 2020 |
| Negative Gate Bias Induced Dynamic ON-Resistance Degradation in Schottky-Type p-Gan Gate HEMTs Z Jiang, M Hua, X Huang, L Li, C Wang, J Chen, KJ Chen IEEE Transactions on Power Electronics 37 (5), 6018-6025, 2021 | 24 | 2021 |
| Characterization of Dynamic Threshold Voltage in Schottky-Type p-GaN Gate HEMT Under High-Frequency Switching K Zhong, H Xu, Z Zheng, J Chen, KJ Chen IEEE Electron Device Letters 42 (4), 501-504, 2021 | 19 | 2021 |
| Formation and Applications in Electronic Devices of Lattice-Aligned Gallium Oxynitride Nanolayer on Gallium Nitride J Chen, J Zhao, S Feng, L Zhang, Y Cheng, H Liao, Z Zheng, X Chen, ... Advanced Materials 35 (12), 2208960, 2023 | 17 | 2023 |
| Impact of hole-deficiency and charge trapping on threshold voltage stability of p-GaN HEMT under reverse-bias stress J Chen, M Hua, J Jiang, J He, J Wei, KJ Chen 2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020 | 17 | 2020 |
| Decoupling of Forward and Reverse Turn-on Threshold Voltages in Schottky-Type p-GaN Gate HEMTs J Chen, M Hua, C Wang, L Liu, L Li, J Wei, L Zhang, Z Zheng, KJ Chen IEEE Electron Device Letters 42 (7), 986-989, 2021 | 13 | 2021 |
| Gate Current Transport in Enhancement-Mode p-n Junction/AlGaN/GaN (PNJ) HEMT M Hua, C Wang, J Chen, J Zhao, S Yang, L Zhang, Z Zheng, J Wei, ... IEEE Electron Device Letters 42 (5), 669-672, 2021 | 13 | 2021 |
| Gate Leakage and Reliability of GaN-Channel FET With SiNₓ/GaON Staggered Gate Stack L Zhang, Z Zheng, W Song, T Chen, S Feng, J Chen, M Hua, KJ Chen IEEE Electron Device Letters 43 (11), 1822-1825, 2022 | 7 | 2022 |
| GaN Power Integration Technology and Its Future Prospects J Wei, Z Zheng, G Tang, H Xu, G Lyu, L Zhang, J Chen, M Hua, S Feng, ... IEEE Transactions on Electron Devices, 2023 | 5 | 2023 |
| Gate reliability and VTH stability investigations of p-GaN HEMTs M Hua, C Wang, J Chen, L Zhang, Z Zheng, KJ Chen 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit …, 2020 | 5 | 2020 |
| A Bootstrap Voltage Clamping Circuit for Dynamic VTH Characterization in Schottky-Type p-GaN Gate Power HEMT K Zhong, H Xu, S Yang, Z Zheng, J Chen, KJ Chen 2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021 | 4 | 2021 |
| Bipolar p-FET with Enhanced Conduction Capability on E-mode GaN-on-Si HEMT Platform J Tang, Z Jiang, C Wang, J Chen, H Chen, Y Zhang, Z Zheng, X Wang, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 3 | 2023 |
| Investigation of Time-Dependent VTH Instability Under Reverse-bias Stress in Schottky Gate p-GaN HEMT J Chen, C Wang, J Jiang, M Hua 2020 IEEE 9th International Power Electronics and Motion Control Conference …, 2020 | 3 | 2020 |
| HyFET—A GaN/SiC Hybrid Field-Effect Transistor S Feng, Z Zheng, Y Wang, G Lyu, K Liu, Y Cheng, J Chen, T Chen, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 2 | 2023 |
| Electroluminescence and Gate Carrier Dynamics in a Schottky-type p-GaN Gate Double-Channel GaN HEMT S Feng, H Liao, T Chen, J Chen, Y Cheng, M Hua, Z Zheng, KJ Chen IEEE Electron Device Letters, 2023 | 2 | 2023 |
| Switching Performance of GaN -FET-bridge (PFB-) HEMTs Studied with Mixed-mode TCAD Simulation J Chen, T Chen, Z Jiang, C Wang, Z Zheng, J Wei, KJ Chen, M Hua 2023 35th International Symposium on Power Semiconductor Devices and ICs …, 2023 | 2 | 2023 |
| Impacts of -GaN Doping Concentration on Gate Reliability of Junction/AlGaN/GaN HEMTs C Wang, H Chen, Z Jiang, J Chen, M Hua 2023 35th International Symposium on Power Semiconductor Devices and ICs …, 2023 | 2 | 2023 |
| E-mode p-FET-bridge HEMT: Toward high VTH, low reverse-conduction loss and enhanced stability M Hua, J Chen, C Wang, L Li, L Liu, Z Zheng, KJ Chen 2021 IEEE 14th International Conference on ASIC (ASICON), 1-4, 2021 | 2 | 2021 |
