| Titanium doped cupric oxide for photovoltaic application S Masudy-Panah, K Radhakrishnan, HR Tan, R Yi, TI Wong, GK Dalapati Solar energy materials and solar cells 140, 266-274, 2015 | 133 | 2015 |
| Grey scale structures formation in SU-8 with e-beam and UV V Kudryashov, XC Yuan, WC Cheong, K Radhakrishnan Microelectronic Engineering 67, 306-311, 2003 | 112 | 2003 |
| Reactive sputter deposition and characterization of tantalum nitride thin films K Radhakrishnan, NG Ing, R Gopalakrishnan Materials Science and Engineering: B 57 (3), 224-227, 1999 | 105 | 1999 |
| p‐CuO/n‐Si heterojunction solar cells with high open circuit voltage and photocurrent through interfacial engineering S Masudy‐Panah, GK Dalapati, K Radhakrishnan, A Kumar, HR Tan, ... Progress in Photovoltaics: Research and Applications 23 (5), 637-645, 2015 | 95 | 2015 |
| Electrical and electrochemical characterization of Li2O: P2O5: Nb2O5-based solid electrolytes BVR Chowdari, K Radhakrishnan Journal of non-crystalline solids 110 (1), 101-110, 1989 | 81 | 1989 |
| Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrate S Arulkumaran, ZH Liu, GI Ng, WC Cheong, R Zeng, J Bu, H Wang, ... Thin Solid Films 515 (10), 4517-4521, 2007 | 69 | 2007 |
| Reduction of Cu-rich interfacial layer and improvement of bulk CuO property through two-step sputtering for p-CuO/n-Si heterojunction solar cell S Masudy-Panah, GK Dalapati, K Radhakrishnan, A Kumar, HR Tan Journal of Applied Physics 116 (7), 2014 | 67 | 2014 |
| Electrical and optical properties of Si-doped InP grown by solid source molecular beam epitaxy using a valved phosphorus cracker cell HQ Zheng, K Radahakrishnan, SF Yoon, GI Ng Journal of Applied Physics 87 (11), 7988-7993, 2000 | 57 | 2000 |
| Metamorphic InP/InGaAs double-heterojunction bipolar transistors on GaAs grown by molecular-beam epitaxy HQ Zheng, K Radhakrishnan, H Wang, KH Yuan, SF Yoon, GI Ng Applied Physics Letters 77 (6), 869-871, 2000 | 50 | 2000 |
| Ionic conductivity studies on Li1− xM2− xM′ xP3O12 (H= Hf, Zr; M′= Ti, Nb) BVR Chowdari, K Radhakrishnan, KA Thomas, GVS Rao Materials Research Bulletin 24 (2), 221-229, 1989 | 50 | 1989 |
| Optical bandgap widening and phase transformation of nitrogen doped cupric oxide S Masudy-Panah, K Radhakrishnan, A Kumar, TI Wong, R Yi, GK Dalapati Journal of Applied Physics 118 (22), 2015 | 48 | 2015 |
| Thermal resistance of metamorphic InP-based HBTs on GaAs substrates using a linearly graded In/sub x/Ga/sub 1-x/P metamorphic buffer H Yang, H Wang, K Radhakrishnan, CL Tan IEEE Transactions on Electron Devices 51 (8), 1221-1227, 2004 | 48 | 2004 |
| Fatigue and reliability evaluation of unnotched carbon epoxy laminates K Radhakrishnan Journal of composite materials 18 (1), 21-31, 1984 | 47 | 1984 |
| Ionic conductivity studies of the vitreous Li2O: P2O5: Ta2O5 system BVR Chowdari, K Radhakrishnan Journal of non-crystalline solids 108 (3), 323-332, 1989 | 44 | 1989 |
| GaN Schottky metal–semiconductor–metal UV photodetectors on Si (111) grown by ammonia-MBE L Ravikiran, K Radhakrishnan, N Dharmarasu, M Agrawal, Z Wang, ... IEEE Sensors Journal 17 (1), 72-77, 2016 | 41 | 2016 |
| Characterization of beryllium-doped molecular beam epitaxial grown GaAs by photoluminescence DH Zhang, K Radhakrishnan, SF Yoon Journal of crystal growth 148 (1-2), 35-40, 1995 | 40 | 1995 |
| Demonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si (111) by plasma-assisted molecular beam epitaxy K Radhakrishnan, N Dharmarasu, Z Sun, S Arulkumaran, GI Ng Applied Physics Letters 97 (23), 2010 | 39 | 2010 |
| Demonstration of aluminum-free metamorphic InP/In (0. 53) Ga (0. 47) As/InP double heterojunction bipolar transistors on GaAssubstrates H Wang, GI Ng, H Zheng, YZ Xiong, LH Chua, K Yuan, K Radhakrishnan, ... IEEE Electron Device Letters 21 (9), 427-429, 2000 | 34 | 2000 |
| Characterization of linearly graded metamorphic InGaP buffer layers on GaAs using high-resolution X-ray diffraction K Yuan, K Radhakrishnan, HQ Zheng, QD Zhuang, GI Ing Thin Solid Films 391 (1), 36-41, 2001 | 28 | 2001 |
| Preparation and characterization of rf-sputtered thin films K Radhakrishnan, CL Tan, HQ Zheng, GI Ng Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 18 (4 …, 2000 | 27 | 2000 |
Geok Ing NgNanyang Technological University在 ntu.edu.sg 的电子邮件经过验证
