| Beyond quantum efficiency limitations originating from the piezoelectric polarization in light-emitting devices G Muziol, H Turski, M Siekacz, K Szkudlarek, L Janicki, M Baranowski, ... Acs Photonics 6 (8), 1963-1971, 2019 | 43 | 2019 |
| Contactless electroreflectance studies of the Fermi level position at the air/GaN interface: Bistable nature of the Ga-polar surface Ł Janicki, M Gładysiewicz, J Misiewicz, K Klosek, M Sobanska, ... Applied Surface Science 396, 1657-1666, 2017 | 36 | 2017 |
| Contactless electroreflectance studies of Fermi level position on c-plane GaN surface grown by molecular beam epitaxy and metalorganic vapor phase epitaxy R Kudrawiec, M Gladysiewicz, L Janicki, J Misiewicz, G Cywinski, ... Applied Physics Letters 100 (18), 2012 | 34 | 2012 |
| Fermi level and bands offsets determination in insulating (Ga, Mn) N/GaN structures L Janicki, G Kunert, M Sawicki, E Piskorska-Hommel, K Gas, R Jakiela, ... Scientific Reports 7 (1), 41877, 2017 | 30 | 2017 |
| Growth of GaN epilayers on c-, m-, a-, and (20.1)-plane GaN bulk substrates obtained by ammonothermal method M Rudziński, R Kudrawiec, L Janicki, J Serafinczuk, R Kucharski, M Zając, ... Journal of crystal growth 328 (1), 5-12, 2011 | 24 | 2011 |
| Contactless electroreflectance studies of surface potential barrier for N-and Ga-face epilayers grown by molecular beam epitaxy R Kudrawiec, L Janicki, M Gladysiewicz, J Misiewicz, G Cywinski, ... Applied Physics Letters 103 (5), 2013 | 22 | 2013 |
| Transparency of semi-insulating, n-type, and p-type ammonothermal GaN substrates in the near-infrared, mid-infrared, and THz spectral range R Kucharski, Ł Janicki, M Zajac, M Welna, M Motyka, C Skierbiszewski, ... Crystals 7 (7), 187, 2017 | 20 | 2017 |
| Engineering of electric field distribution in GaN (cap)/AlGaN/GaN heterostructures: theoretical and experimental studies M Gladysiewicz, L Janicki, J Misiewicz, M Sobanska, K Klosek, ... Journal of Physics D: Applied Physics 49 (34), 345106, 2016 | 15 | 2016 |
| Zn acceptor position in GaN: Zn probed by contactless electroreflectance spectroscopy Ł Janicki, MS Mohajerani, J Hartmann, E Zdanowicz, HH Wehmann, ... Applied Physics Letters 113 (3), 2018 | 14 | 2018 |
| Determination of Fermi level position at the graphene/GaN Interface using electromodulation spectroscopy AP Herman, L Janicki, HS Stokowski, M Rudzinski, E Rozbiegala, ... Advanced Materials Interfaces 7 (21), 2001220, 2020 | 13 | 2020 |
| Sensitivity of N-polar GaN surface barrier to ambient gases Ł Janicki, J Misiewicz, M Siekacz, H Turski, J Moneta, S Gorantla, ... Sensors and Actuators B: Chemical 281, 561-567, 2019 | 13 | 2019 |
| Determination of the band gap of indium-rich InGaN by means of photoacoustic spectroscopy R Oliva, SJ Zelewski, Ł Janicki, KR Gwóźdź, J Serafińczuk, M Rudziński, ... Semiconductor Science and Technology 33 (3), 035007, 2018 | 13 | 2018 |
| Theoretical and experimental studies of electric field distribution in N-polar GaN/AlGaN/GaN heterostructures M Gladysiewicz, L Janicki, M Siekacz, G Cywinski, C Skierbiszewski, ... Applied Physics Letters 107 (26), 2015 | 13 | 2015 |
| Growth of AlGaN/GaN heterostructure with lattice-matched AlIn (Ga) N back barrier JG Kim, SH Kang, Ł Janicki, JH Lee, JM Ju, KW Kim, YS Lee, SH Lee, ... Solid-State Electronics 152, 24-28, 2019 | 12 | 2019 |
| Surface properties of c-plane GaN grown by plasma-assisted molecular beam epitaxy G Cywiński, R Kudrawiec, Ł Janicki, J Misiewicz, C Cheze, M Siekacz, ... Journal of Vacuum Science & Technology B 31 (3), 2013 | 11 | 2013 |
| Contactless electroreflectance of AlGaN/GaN heterostructures deposited on c-, a-, m-, and (20.1)-plane GaN bulk substrates grown by ammonothermal method R Kudrawiec, M Rudziński, M Gladysiewicz, L Janicki, PR Hageman, ... Journal of Applied Physics 109 (6), 2011 | 11 | 2011 |
| Sensitivity of Fermi level position at Ga-polar, N-polar, and nonpolar m-plane GaN surfaces to vacuum and air ambient Ł Janicki, M Ramírez-López, J Misiewicz, G Cywiński, M Boćkowski, ... Japanese Journal of Applied Physics 55 (5S), 05FA08, 2016 | 9 | 2016 |
| Electric fields and surface fermi level in undoped GaN/AlN two‐dimensional hole gas heterostructures Ł Janicki, R Chaudhuri, SJ Bader, HG Xing, D Jena, R Kudrawiec physica status solidi (RRL)–Rapid Research Letters 15 (4), 2000573, 2021 | 7 | 2021 |
| Mask-free three-dimensional epitaxial growth of III-nitrides M Rudziński, S Zlotnik, M Wójcik, J Gaca, Ł Janicki, R Kudrawiec Journal of Materials Science 56, 558-569, 2021 | 7 | 2021 |
| Thermal oxidation of [0001] GaN in water vapor compared with dry and wet oxidation: Oxide properties and impact on GaN Ł Janicki, R Korbutowicz, M Rudziński, PP Michałowski, S Złotnik, ... Applied Surface Science 598, 153872, 2022 | 6 | 2022 |
Robert KudrawiecWroclaw University of Science and Technology在 pwr.edu.pl 的电子邮件经过验证
