Interface gap states and Schottky barrier inhomogeneity at metal/n-type GaN Schottky contacts M Mamor Journal of Physics: Condensed Matter 21 (33), 335802, 2009 | 129 | 2009 |
Defects and magnetic properties in Mn-implanted -SiC epilayer on Si(100): Experiments and first-principles calculations K Bouziane, M Mamor, M Elzain, P Djemia, SM Chérif Physical Review B—Condensed Matter and Materials Physics 78 (19), 195305, 2008 | 45 | 2008 |
Influence of He-ion irradiation on the characteristics of Pd/n-Si0. 90Ge0. 10/Si Schottky contacts M Mamor, A Sellai, K Bouziane, SH Al Harthi, M Al Busaidi, FS Gard Journal of Physics D: Applied Physics 40 (5), 1351, 2007 | 41 | 2007 |
Device analysis of Cu (In, Ga) Se2 heterojunction solar cells-some open questions U Rau, K Weinert, Q Nguyen, M Mamor, G Hanna, A Jasenek, HW Schock MRS Online Proceedings Library (OPL) 668, H9. 1, 2001 | 34 | 2001 |
Electrical and structural characterization of as-grown and annealed hydrothermal bulk ZnO GH Kassier, M Hayes, FD Auret, M Mamor, K Bouziane Journal of applied physics 102 (1), 2007 | 33 | 2007 |
DC magnetron sputtered tungsten: W film properties and electrical properties of W/Si Schottky diodes K Bouziane, M Mamor, F Meyer Applied Physics A 81, 209-215, 2005 | 33 | 2005 |
Electrical characterization of defects introduced in during electron-beam deposition of Sc Schottky barrier diodes M Mamor, FD Auret, SA Goodman, G Myburg Applied physics letters 72 (9), 1069-1071, 1998 | 31 | 1998 |
Defects induced in GaN by europium implantation M Mamor, V Matias, A Vantomme, A Colder, P Marie, P Ruterana Applied physics letters 85 (12), 2244-2246, 2004 | 29 | 2004 |
Short-range order and strain in SiGeC alloys probed by phonons E Finkman, F Meyer, M Mamor Journal of Applied Physics 89 (5), 2580-2587, 2001 | 28 | 2001 |
On the electrical characteristics of Au/n-type GaAs Schottky diode M Mamor, K Bouziane, A Tirbiyine, H Alhamrashdi Superlattices and Microstructures 72, 344-351, 2014 | 24 | 2014 |
Investigation of p‐type macroporous silicon formation C Lévy‐Clément, S Lust, M Mamor, J Rappich, T Dittrich physica status solidi (a) 202 (8), 1390-1395, 2005 | 23 | 2005 |
Configurationally metastable defects in irradiated epitaxially grown boron-doped p-type Si M Mamor, M Willander, FD Auret, WE Meyer, E Sveinbjörnsson Physical Review B 63 (4), 045201, 2000 | 22 | 2000 |
Potential barrier inhomogeneities in irradiated Pd/n-SiGe Schottky diodes A Sellai, M Mamor Applied physics A 89, 503-508, 2007 | 20 | 2007 |
Schottky barrier heights on IV-IV compound semiconductors F Meyer, M Mamor, V Aubry-Fortuna, P Warren, S Bodnar, D Dutartre, ... Journal of Electronic Materials 25, 1748-1753, 1996 | 18 | 1996 |
Buffer effect on GMR in thin Co/Cu multilayers K Bouziane, AD Al Rawas, M Maaza, M Mamor Journal of alloys and compounds 414 (1-2), 42-47, 2006 | 17 | 2006 |
Fermi-level pinning and Schottky barrier heights on epitaxially grown fully strained and partially relaxed n-type layers M Mamor, O Nur, M Karlsteen, M Willander, FD Auret Journal of Applied Physics 86 (12), 6890-6894, 1999 | 17 | 1999 |
WSi Schottky diodes: effect of sputtering deposition conditions on the barrier height M Mamor, E Dufour-Gergam, L Finkman, G Tremblay, F Meyer, ... Applied surface science 91 (1-4), 342-346, 1995 | 15 | 1995 |
Negatively charged excitons X− in the electron gas in CdTe/Cd1− xZnxTe quantum wells K Kheng, RT Cox, YM d'Aubigné, M Mamor, N Magnea, H Mariette, ... Surface science 305 (1-3), 225-229, 1994 | 15 | 1994 |
Electronic properties of defects introduced in strained, epitaxial p-type SiGe alloys during sputter etching in an argon plasma M Mamor, FD Auret, M Willander, SA Goodman, G Myburg, F Meyer Semiconductor Science and technology 14 (7), 611, 1999 | 14 | 1999 |
Fermi-level pinning in Schottky diodes on IV–IV semiconductors: Effect of Ge and C incorporation M Mamor, JL Perrossier, V Aubry-Fortuna, F Meyer, D Bouchier, S Bodnar, ... Thin Solid Films 294 (1-2), 141-144, 1997 | 14 | 1997 |