| Enhanced Ferroelectric Properties in Hf0.5Zr0.5O2 Films Using a HfO0.61N0.72 Interfacial Layer BY Kim, HW Park, SD Hyun, YB Lee, SH Lee, M Oh, SK Ryoo, IS Lee, ... Advanced Electronic Materials 8 (6), 2100042, 2022 | 36 | 2022 |
| Polarizing and depolarizing charge injection through a thin dielectric layer in a ferroelectric–dielectric bilayer HW Park, SD Hyun, IS Lee, SH Lee, YB Lee, M Oh, BY Kim, SG Ryoo, ... Nanoscale 13 (4), 2556-2572, 2021 | 30 | 2021 |
| Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate of Metal‐Ferroelectric‐Insulator‐Semiconductor Capacitor with Al‐Doped HfO2 Ferroelectric Film YB Lee, BY Kim, HW Park, SH Lee, M Oh, SK Ryoo, IS Lee, S Byun, ... Advanced Electronic Materials 8 (11), 2200310, 2022 | 18 | 2022 |
| Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation M Yuan, J Niroula, Q Xie, NS Rajput, K Fu, S Luo, SK Das, AJB Iqbal, ... IEEE Electron Device Letters, 2023 | 11 | 2023 |
| Negative Capacitance from the Inhomogenous Stray Field in a Ferroelectric–Dielectric Structure HW Park, M Oh, CS Hwang Advanced Functional Materials 32 (19), 2200389, 2022 | 11 | 2022 |
| Improved ferroelectricity in Hf0. 5Zr0. 5O2 by inserting an upper HfOxNy interfacial layer BY Kim, SH Kim, HW Park, YB Lee, SH Lee, M Oh, SK Ryoo, IS Lee, ... Applied Physics Letters 119 (12), 2021 | 9 | 2021 |
| Top Electrode Engineering for High‐Performance Ferroelectric Hf0.5Zr0.5O2 Capacitors BY Kim, IS Lee, HW Park, YB Lee, SH Lee, M Oh, SK Ryoo, SR Byun, ... Advanced Materials Technologies 8 (16), 2300146, 2023 | 5 | 2023 |
| Double S‐Shaped Polarization – Voltage Curve and Negative Capacitance from Al2O3‐Hf0.5Zr0.5O2‐Al2O3 Triple‐Layer Structure HW Park, M Oh, IS Lee, S Byun, YH Jang, YB Lee, BY Kim, SH Lee, ... Advanced Functional Materials 33 (9), 2206637, 2023 | 4 | 2023 |
| Atomic layer deposition of HfN x films and improving the film performance by annealing under NH 3 atmosphere SK Ryoo, BY Kim, YB Lee, HW Park, SH Lee, M Oh, IS Lee, SY Byun, ... Journal of Materials Chemistry C 11 (24), 8018-8026, 2023 | 2 | 2023 |
