| High-power modular multilevel converters with SiC JFETs D Peftitsis, G Tolstoy, A Antonopoulos, J Rabkowski, JK Lim, M Bakowski, ... IEEE Transactions on Power Electronics 27 (1), 28-36, 2011 | 230 | 2011 |
| Simulation of SiC high power devices M Bakowski, U Gustafsson, U Lindefelt physica status solidi (a) 162 (1), 421-440, 1997 | 188 | 1997 |
| Short-circuit protection circuits for silicon-carbide power transistors DP Sadik, J Colmenares, G Tolstoy, D Peftitsis, M Bakowski, J Rabkowski, ... IEEE transactions on industrial electronics 63 (4), 1995-2004, 2015 | 185 | 2015 |
| Progress towards SiC products CI Harris, S Savage, A Konstantinov, M Bakowski, P Ericsson Applied Surface Science 184 (1-4), 393-398, 2001 | 116 | 2001 |
| Junction termination for SiC Schottky diode M Bakowski, U Gustafsson US Patent 5,914,500, 1999 | 95 | 1999 |
| Status and prospects of SiC power devices M Bakowski IEEJ Transactions on Industry Applications 126 (4), 391-399, 2006 | 70 | 2006 |
| Schottky diode of SiC and a method for production thereof W Hermansson, B Bijlenga, L Ramberg, K Rottner, L Zdansky, CI Harris, ... US Patent 6,104,043, 2000 | 67 | 2000 |
| Fabrication of a SiC semiconductor device comprising a pn junction with a voltage absorbing edge M Bakowski, U Gustafsson, K Rottner, S Savage US Patent 6,040,237, 2000 | 64 | 2000 |
| Semiconductor device of SiC having an insulated gate and buried grid region for high breakdown voltage C Harris, B Bijlenga, L Zdansky, U Gustafsson, M Bakowski, ... US Patent 6,091,108, 2000 | 62 | 2000 |
| Analysis and experimental verification of the influence of fabrication process tolerances and circuit parasitics on transient current sharing of parallel-connected SiC JFETs JK Lim, D Peftitsis, J Rabkowski, M Bakowski, HP Nee IEEE Transactions on Power Electronics 29 (5), 2180-2191, 2013 | 57 | 2013 |
| Combined proton and electron irradiation for improved GTO thyristors A Hallén, M Bakowski Solid-state electronics 32 (11), 1033-1037, 1989 | 54 | 1989 |
| Design, process, and performance of all‐epitaxial normally‐off SiC JFETs RK Malhan, M Bakowski, Y Takeuchi, N Sugiyama, A Schöner physica status solidi (a) 206 (10), 2308-2328, 2009 | 48 | 2009 |
| Development of 3C-SiC MOSFETs M Bakowski, A Schöner, P Ericsson, H Strömberg, H Nagasawa, ... Journal of telecommunications and information technology, 49-56, 2007 | 39 | 2007 |
| Optically triggered semiconductor device C Harris, M Bakowski US Patent 5,663,580, 1997 | 39 | 1997 |
| Aluminium nitride deposition on 4H-SiC by means of physical vapour deposition M Wolborski, D Rosén, A Hallén, M Bakowski Thin Solid Films 515 (2), 456-459, 2006 | 35 | 2006 |
| Characterisation of the Al2O3 films deposited by ultrasonic spray pyrolysis and atomic layer deposition methods for passivation of 4H–SiC devices M Wolborski, M Bakowski, A Ortiz, V Pore, A Schöner, M Ritala, M Leskelä, ... Microelectronics Reliability 46 (5-6), 743-755, 2006 | 35 | 2006 |
| SiC semiconductor device comprising a pn junction with a voltage absorbing edge M Bakowski, U Gustafsson, K Rottner, S Savage US Patent 6,002,159, 1999 | 35 | 1999 |
| Characterization of HfO2 films deposited on 4H-SiC by atomic layer deposition M Wolborski, M Rooth, M Bakowski, A Hallén Journal of Applied Physics 101 (12), 2007 | 34 | 2007 |
| SiC semiconductor device comprising a pn junction M Bakowski, U Gustafsson, CI Harris US Patent 5,932,894, 1999 | 34 | 1999 |
| Depletion layer characteristics at the surface of beveled high-voltage pn junctions M Bakowski, KI Lundstrom IEEE Transactions on Electron Devices 20 (6), 550-563, 1973 | 34 | 1973 |
