关注
Oleg Gluschenkov
Oleg Gluschenkov
在 us.ibm.com 的电子邮件经过验证
标题
引用次数
引用次数
年份
Vertical MOSFET SRAM cell
LL Hsu, O Gluschenkov, JA Mandelman, CJ Radens
US Patent 7,138,685, 2006
3662006
High acceptor level doping in silicon germanium
MA Ebrish, O Gluschenkov, S Mochizuki, A Reznicek
US Patent 9,799,736, 2017
3272017
Integrated circuit chip with FETs having mixed body thicknesses and method of manufacture thereof
RV Joshi, LC Hsu, O Gluschenkov
US Patent 7,968,944, 2011
2272011
Structure and method to improve channel mobility by gate electrode stress modification
MP Belyansky, D Chidambarrao, OH Dokumaci, BB Doris, O Gluschenkov
US Patent 6,977,194, 2005
2182005
Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectrics
M Yang, EP Gusev, M Ieong, O Gluschenkov, DC Boyd, KK Chan, ...
IEEE Electron Device Letters 24 (5), 339-341, 2003
2032003
Strained finFETs and method of manufacture
D Chidambarrao, OH Dokumaci, OG Gluschenkov
US Patent 7,198,995, 2007
1912007
Structure and method of making strained semiconductor CMOS transistors having lattice-mismatched semiconductor regions underlying source and drain regions
H Chen, D Chidambarrao, OG Gluschenkov, AL Steegen, HS Yang
US Patent 6,891,192, 2005
1842005
A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
R Xie, P Montanini, K Akarvardar, N Tripathi, B Haran, S Johnson, T Hook, ...
2016 IEEE international electron devices meeting (IEDM), 2.7. 1-2.7. 4, 2016
1772016
Structure and method for mobility enhanced MOSFETs with unalloyed silicide
Y Liu, D Chidambarrao, O Gluschenkov, JR Holt, RT Mo, K Rim
US Patent 8,217,423, 2012
1312012
Gate processing method with reduced gate oxide corner and edge thinning
H Tews, O Gluschenkov, M Weybright
US Patent 6,656,798, 2003
1302003
High mobility CMOS circuits
BB Doris, OG Gluschenkov, H Zhu
US Patent 7,015,082, 2006
1292006
Silicon device on Si: C-OI and SGOI and method of manufacture
D Chidambarrao, OH Dokumaci, OG Gluschenkov
US Patent 7,247,534, 2007
1232007
Logic circuits having linear and cellular gate transistors
VWC Chan, HJC Wann, SF Huang, O Gluschenkov
US Patent 6,975,133, 2005
1062005
Stressed semiconductor device structures having granular semiconductor material
BB Doris, MP Belyansky, DC Boyd, D Chidambarrao, O Gluschenkov
US Patent 7,122,849, 2006
1042006
Semiconductor device structure with active regions having different surface directions and methods
BB Doris, O Gluschenkov, M Ieong, E Leobandung, H Zhu
US Patent 7,354,806, 2008
1032008
Optical characteristics of p‐type GaN films grown by plasma‐assisted molecular beam epitaxy
JM Myoung, KH Shim, C Kim, O Gluschenkov, K Kim, S Kim, DA Turnbull, ...
Applied Physics Letters 69 (18), 2722-2724, 1996
1011996
Method of fabricating mobility enhanced CMOS devices
MP Belyansky, BB Doris, O Gluschenkov
US Patent 7,205,206, 2007
1002007
RTA-driven intra-die variations in stage delay, and parametric sensitivities for 65nm technology
B Walsh, H Utomo, E Leobandung, A Mahorowala, D Mocuta, K Miyamoto, ...
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 170-171, 2006
952006
Method for forming a uniform distribution of nitrogen in silicon oxynitride gate dielectric
AI Chou, MP Chudzik, T Furukawa, O Gluschenkov, PD Kirsch, KC Scheer, ...
US Patent 6,930,060, 2005
952005
Structure and method to improve channel mobility by gate electrode stress modification
MP Belyansky, D Chidambarrao, OH Dokumaci, BB Doris, O Gluschenkov
US Patent 7,750,410, 2010
922010
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