| Design rules for minimizing voltage losses in high-efficiency organic solar cells D Qian, Z Zheng, H Yao, W Tress, TR Hopper, S Chen, S Li, J Liu, S Chen, ... Nature materials 17 (8), 703-709, 2018 | 784 | 2018 |
| Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy IA Buyanova, WM Chen, G Pozina, JP Bergman, B Monemar, HP Xin, ... Applied physics letters 75 (4), 501-503, 1999 | 323 | 1999 |
| Evidence for two Mg related acceptors in GaN BO Monemar, PP Paskov, G Pozina, C Hemmingsson, JP Bergman, ... Physical review letters 102 (23), 235501, 2009 | 149 | 2009 |
| Group III-nitride based hetero and quantum structures B Monemar, G Pozina Progress in Quantum Electronics 24 (6), 239-290, 2000 | 149 | 2000 |
| Growth and excitonic properties of single fractional monolayer CdSe/ZnSe structures SV Ivanov, AA Toropov, TV Shubina, SV Sorokin, AV Lebedev, IV Sedova, ... Journal of applied physics 83 (6), 3168-3171, 1998 | 137 | 1998 |
| Exciton oscillator strength in magnetic-field-induced spin superlattices CdTe/(Cd, Mn) Te EL Ivchenko, AV Kavokin, VP Kochereshko, GR Posina, IN Uraltsev, ... Physical Review B 46 (12), 7713, 1992 | 136 | 1992 |
| Time-resolved studies of photoluminescence in alloys: Evidence for indirect-direct band gap crossover IA Buyanova, G Pozina, JP Bergman, WM Chen, HP Xin, CW Tu Applied physics letters 81 (1), 52-54, 2002 | 128 | 2002 |
| Mechanism for rapid thermal annealing improvements in undoped structures grown by molecular beam epitaxy IA Buyanova, G Pozina, PN Hai, NQ Thinh, JP Bergman, WM Chen, ... Applied Physics Letters 77 (15), 2325-2327, 2000 | 120 | 2000 |
| Properties of molecular-beam epitaxy-grown GaNAs from optical spectroscopy G Pozina, I Ivanov, B Monemar, JV Thordson, TG Andersson Journal of applied physics 84 (7), 3830-3835, 1998 | 118 | 1998 |
| Perovskite-molecule composite thin films for efficient and stable light-emitting diodes H Wang, FU Kosasih, H Yu, G Zheng, J Zhang, G Pozina, Y Liu, C Bao, ... Nature communications 11 (1), 891, 2020 | 111 | 2020 |
| Reducing thermal resistance of AlGaN/GaN electronic devices using novel nucleation layers GJ Riedel, JW Pomeroy, KP Hilton, JO Maclean, DJ Wallis, MJ Uren, ... IEEE Electron Device Letters 30 (2), 103-106, 2008 | 97 | 2008 |
| Type I band alignment in the GaN x As 1− x/GaAs quantum wells IA Buyanova, G Pozina, PN Hai, WM Chen, HP Xin, CW Tu Physical Review B 63 (3), 033303, 2000 | 91 | 2000 |
| Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells G Pozina, JP Bergman, B Monemar, T Takeuchi, H Amano, I Akasaki Journal of Applied Physics 88 (5), 2677-2681, 2000 | 82 | 2000 |
| SiC crystal growth by HTCVD A Ellison, B Magnusson, B Sundqvist, GR Pozina, P Bergman, E Janzén, ... Materials Science Forum 457, 9-14, 2004 | 78 | 2004 |
| Enhancement of spontaneous emission in Tamm plasmon structures AR Gubaydullin, C Symonds, J Bellessa, KA Ivanov, ED Kolykhalova, ... Scientific Reports 7 (1), 9014, 2017 | 65 | 2017 |
| Synthesis of Mg-doped ZnO NPs via a chemical low-temperature method and investigation of the efficient photocatalytic activity for the degradation of dyes under solar light RE Adam, H Alnoor, G Pozina, X Liu, M Willander, O Nur Solid State Sciences 99, 106053, 2020 | 60 | 2020 |
| Dependence of resonance energy transfer on exciton dimensionality JJ Rindermann, G Pozina, B Monemar, L Hultman, H Amano, ... Physical review letters 107 (23), 236805, 2011 | 60 | 2011 |
| Bound exciton dynamics in GaN grown by hydride vapor-phase epitaxy G Pozina, JP Bergman, T Paskova, B Monemar Applied Physics Letters 75 (26), 4124-4126, 1999 | 59 | 1999 |
| Emission properties of Ga2O3 nano-flakes: effect of excitation density G Pozina, M Forsberg, MA Kaliteevski, C Hemmingsson Scientific Reports 7 (1), 42132, 2017 | 58 | 2017 |
| Properties of the main Mg-related acceptors in GaN from optical and structural studies B Monemar, PP Paskov, G Pozina, C Hemmingsson, JP Bergman, ... Journal of Applied Physics 115 (5), 2014 | 58 | 2014 |
