| Modulation-doped β-(Al0. 2Ga0. 8) 2O3/Ga2O3 field-effect transistor S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ... Applied Physics Letters 111 (2), 2017 | 315 | 2017 |
| Large area single crystal (0001) oriented MoS2 MR Laskar, L Ma, S Kannappan, P Sung Park, S Krishnamoorthy, ... Applied Physics Letters 102 (25), 2013 | 271 | 2013 |
| β-Gallium oxide power electronics AJ Green, J Speck, G Xing, P Moens, F Allerstam, K Gumaelius, T Neyer, ... Apl Materials 10 (2), 2022 | 254 | 2022 |
| High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector A Singh Pratiyush, S Krishnamoorthy, S Vishnu Solanke, Z Xia, ... Applied Physics Letters 110 (22), 2017 | 253 | 2017 |
| Electrical properties of atomic layer deposited aluminum oxide on gallium nitride M Esposto, S Krishnamoorthy, DN Nath, S Bajaj, TH Hung, S Rajan Applied Physics Letters 99 (13), 2011 | 205 | 2011 |
| Polarization-engineered GaN/InGaN/GaN tunnel diodes S Krishnamoorthy, DN Nath, F Akyol, PS Park, M Esposto, S Rajan Applied Physics Letters 97, 203502, 2010 | 193 | 2010 |
| Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes F Akyol, DN Nath, S Krishnamoorthy, PS Park, S Rajan Applied Physics Letters 100 (11), 2012 | 177 | 2012 |
| Delta-doped β-gallium oxide field-effect transistor S Krishnamoorthy, Z Xia, S Bajaj, M Brenner, S Rajan Applied Physics Express 10 (5), 051102, 2017 | 164 | 2017 |
| Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes C Joishi, S Rafique, Z Xia, L Han, S Krishnamoorthy, Y Zhang, S Lodha, ... Applied Physics Express 11 (3), 031101, 2018 | 158 | 2018 |
| Low resistance GaN/InGaN/GaN tunnel junctions S Krishnamoorthy, F Akyol, PS Park, S Rajan Applied Physics Letters 102 (11), 2013 | 155 | 2013 |
| Optical signatures of deep level defects in Ga2O3 H Gao, S Muralidharan, N Pronin, MR Karim, SM White, T Asel, G Foster, ... Applied Physics Letters 112 (24), 2018 | 147 | 2018 |
| Delta Doped -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts Z Xia, C Joishi, S Krishnamoorthy, S Bajaj, Y Zhang, M Brenner, S Lodha, ... IEEE Electron Device Letters 39 (4), 568-571, 2018 | 144 | 2018 |
| High-k Oxide Field-Plated Vertical (001) β-Ga2O3 Schottky Barrier Diode With Baliga’s Figure of Merit Over 1 GW/cm2 S Roy, A Bhattacharyya, P Ranga, H Splawn, J Leach, S Krishnamoorthy IEEE Electron Device Letters 42 (8), 1140-1143, 2021 | 129 | 2021 |
| Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs TH Hung, PS Park, S Krishnamoorthy, DN Nath, S Rajan Electron Device Letters, IEEE 35 (3), 312-314, 2014 | 103 | 2014 |
| Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces TH Hung, S Krishnamoorthy, M Esposto, D Neelim Nath, P Sung Park, ... Applied Physics Letters 102 (7), 2013 | 103 | 2013 |
| Interband tunneling for hole injection in III-nitride ultraviolet emitters Y Zhang, S Krishnamoorthy, JM Johnson, F Akyol, A Allerman, ... Applied Physics Letters 106 (14), 2015 | 98 | 2015 |
| Tunneling-based carrier regeneration in cascaded GaN light emitting diodes to overcome efficiency droop F Akyol, S Krishnamoorthy, S Rajan Applied Physics Letters 103 (8), 2013 | 95 | 2013 |
| AlGaN channel field effect transistors with graded heterostructure ohmic contacts S Bajaj, F Akyol, S Krishnamoorthy, Y Zhang, S Rajan Applied Physics Letters 109 (13), 2016 | 94 | 2016 |
| InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes S Krishnamoorthy, F Akyol, S Rajan Applied Physics Letters 105 (14), 2014 | 90 | 2014 |
| Density-dependent electron transport and precise modeling of GaN high electron mobility transistors S Bajaj, OF Shoron, PS Park, S Krishnamoorthy, F Akyol, TH Hung, ... Applied Physics Letters 107 (15), 2015 | 87 | 2015 |
Siddharth RajanElectrical and Computer Engineering, Ohio State University在 ece.osu.edu 的电子邮件经过验证
