受强制性开放获取政策约束的文章 - Hai Jiang了解详情
无法在其他位置公开访问的文章：6 篇
Characterization of self-heating leads to universal scaling of HCI degradation of multi-fin SOI FinFETs
H Jiang, SH Shin, X Liu, X Zhang, MA Alam
2016 IEEE International Reliability Physics Symposium (IRPS), 2A-3-1-2A-3-7, 2016
强制性开放获取政策： US National Science Foundation
RTN based oxygen vacancy probing method for Ox-RRAM reliability characterization and its application in tail bits
P Huang, DB Zhu, C Liu, Z Zhou, Z Dong, H Jiang, WS Shen, LF Liu, ...
2017 IEEE International Electron Devices Meeting (IEDM), 21.4. 1-21.4. 4, 2017
强制性开放获取政策： 国家自然科学基金委员会
Reliability investigation of high-k/metal gate in nMOSFETs by three-dimensional kinetic Monte-Carlo simulation with multiple trap interactions
Y Li, H Jiang, Z Lun, Y Wang, P Huang, H Hao, G Du, X Zhang, X Liu
Japanese Journal of Applied Physics 55 (4S), 04ED15, 2016
强制性开放获取政策： 国家自然科学基金委员会
Insight into PBTI in InGaAs Nanowire FETs with Al2O3 and LaAlO3 Gate Dielectrics
Y Li, SY Di, H Jiang, P Huang, YJ Wang, ZY Lun, L Shen, LX Yin, X Zhang, ...
Electron Devices Meeting (IEDM), 2016 IEEE International, 36.5.1 - 36.5.4, 2016
强制性开放获取政策： 国家自然科学基金委员会
Evaulation the degradation in nMOSFETs with HfO2 gate dielectric and interfacial layer by 3D Kinetic Monte-Carlo method
Y Li, Z Lun, Y Wang, P Huang, H Jiang, X Zhang, G Du, X Liu
2016 IEEE Silicon Nanoelectronics Workshop (SNW), 196-197, 2016
强制性开放获取政策： 国家自然科学基金委员会
Investigation of local heating effect for 14nm Ge pFinFETs based on Monte Carlo method
L Yin, H Jiang, L Shen, JC Wang, G Du, X Liu
2016 International Symposium on VLSI Technology, Systems and Application …, 2016
强制性开放获取政策： 国家自然科学基金委员会
可在其他位置公开访问的文章：8 篇
The Impact of Self-Heating on HCI Reliability in High-Performance Digital Circuits
H Jiang, SH Shin, X Liu, X Zhang, MA Alam
IEEE Electron Device Letters 38 (4), 430-433, 2017
强制性开放获取政策： US National Science Foundation, 国家自然科学基金委员会
Integrated modeling of self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern integrated circuits
W Ahn, SH Shin, C Jiang, H Jiang, MA Wahab, MA Alam
Microelectronics Reliability 81, 262-273, 2018
强制性开放获取政策： US National Science Foundation
Investigation of self-heating effect on hot carrier degradation in multiple-fin SOI FinFETs
H Jiang, X Liu, N Xu, Y He, G Du, X Zhang
IEEE Electron Device Letters 36 (12), 1258-1260, 2015
强制性开放获取政策： 国家自然科学基金委员会
Comprehensive understanding of hot carrier degradation in multiple-fin SOI FinFETs
H Jiang, L Yin, Y Li, N Xu, K Zhao, Y He, G Du, X Liu, X Zhang
2015 IEEE International Reliability Physics Symposium, XT. 6.1-XT. 6.4, 2015
强制性开放获取政策： 国家自然科学基金委员会
Impact of self-heating effects on nanoscale Ge p-channel FinFETs with Si substrate
L Yin, L Shen, H Jiang, G Du, X Liu
Science China Information Sciences 61, 1-9, 2018
强制性开放获取政策： 国家自然科学基金委员会
3D KMC reliability simulation of nano-scaled HKMG nMOSFETs with multiple traps coupling
Y Li, Z Lun, P Huang, Y Wang, H Jiang, G Du, X Liu
2015 International Conference on Simulation of Semiconductor Processes and …, 2015
强制性开放获取政策： 国家自然科学基金委员会
An Investigation of DC/AC hot carrier degradation in multiple-fin SOI FinFETs
H Jiang, XY Liu, N Xu, YD He, G Du, X Zhang
2015 IEEE 22nd International Symposium on the Physical and Failure Analysis …, 2015
强制性开放获取政策： 国家自然科学基金委员会
Exact and heuristic algorithms for cardinality-constrained assortment optimization problem under the cross-nested logit model
L Zhang, SS Azadeh, H Jiang
European Journal of Operational Research, 2024
强制性开放获取政策： Netherlands Organisation for Scientific Research
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