| The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor U Choi, D Jung, K Lee, T Kwak, T Jang, Y Nam, B So, O Nam physica status solidi (a) 217 (7), 1900694, 2020 | 15 | 2020 |
| Phys. Status Solidi (A) Appl HW Choi, D Jung, K Lee, T Kwak, T Jang, Y Nam, B So, O Nam Mater. Sci 217, 1900694, 2020 | 15 | 2020 |
| Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire U Choi, HS Kim, K Lee, D Jung, T Kwak, T Jang, Y Nam, B So, MJ Kang, ... physica status solidi (a) 217 (7), 1900695, 2020 | 7 | 2020 |
| Effect of AlxGa1− xN buffer layer on the structural and electrical properties of AlGaN/GaN/AlxGa1− xN double heterojunction high electron mobility transistor structures Y Nam, U Choi, K Lee, T Jang, D Jung, O Nam Journal of Vacuum Science & Technology B 38 (2), 2020 | 7 | 2020 |
| Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT U Choi, K Lee, T Kwak, D Jung, T Jang, Y Nam, B So, HS Kim, HY Cha, ... Japanese Journal of Applied Physics 58 (12), 121003, 2019 | 5 | 2019 |
| Effect of ammonia pretreatment on crystal quality of N-polar GaN grown on SiC by metalorganic chemical vapor deposition U Choi, K Lee, J Han, T Jang, Y Nam, B So, T Kwak, O Nam Thin Solid Films 675, 148-152, 2019 | 2 | 2019 |
