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Zhiqi Chen
Zhiqi Chen
在 mail.sdu.edu.cn 的电子邮件经过验证
标题
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年份
Topology-engineered orbital Hall effect in two-dimensional ferromagnets
Z Chen, R Li, Y Bai, N Mao, M Zeer, D Go, Y Dai, B Huang, Y Mokrousov, ...
Nano Letters 24 (16), 4826-4833, 2024
102024
Tunable second-order topological insulators in Chern insulators 2H-FeX2 (X= Cl and Br)
X Feng, L Cai, Z Chen, Y Dai, B Huang, C Niu
Applied Physics Letters 122 (19), 2023
92023
Engineering Gapless Edge States from Antiferromagnetic Chern Homobilayer
X Zou, R Li, Z Chen, Y Dai, B Huang, C Niu
Nano Letters 24 (1), 450-457, 2023
32023
Magnetic topological insulators with switchable edge and corner states in monolayer
X Wu, Z Chen, Y Bai, B Huang, Y Dai, C Niu
Physical Review B 109 (23), 235407, 2024
22024
Coupled Electronic and Magnonic Topological States in Two-Dimensional Ferromagnets
Y Bai, L Zhang, N Mao, R Li, Z Chen, Y Dai, B Huang, C Niu
ACS nano, 2024
22024
Layer-coupled corner states in two-dimensional topological multiferroics
R Li, X Zou, Y Bai, Z Chen, B Huang, Y Dai, C Niu
Materials Horizons 11 (9), 2242-2247, 2024
22024
Manipulating corner states without topological phase transition in two-dimensional intrinsic triferroic materials
X Feng, R Li, Z Chen, Y Dai, B Huang, C Niu
Physical Review B 109 (16), 165308, 2024
12024
Floquet engineering of the orbital Hall effect and valleytronics in two-dimensional topological magnets
R Li, X Zou, Z Chen, X Feng, B Huang, Y Dai, C Niu
Materials Horizons, 2024
2024
A mixed Weyl semimetal in a two-dimensional ferromagnetic BaCrSe 2 monolayer
B Yuan, W Sun, Y Bai, Z Chen, B Huang, Y Dai, C Niu
Journal of Materials Chemistry C 12 (1), 296-300, 2024
2024
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