| TaO x-based resistive switching memories: prospective and challenges A Prakash, D Jana, S Maikap Nanoscale research letters 8 (1), 1-17, 2013 | 234 | 2013 |
| Conductive-bridging random access memory: challenges and opportunity for 3D architecture D Jana, S Roy, R Panja, M Dutta, SZ Rahaman, R Mahapatra, S Maikap Nanoscale research letters 10 (1), 1-23, 2015 | 103 | 2015 |
| RRAM characteristics using a new Cr/GdOx/TiN structure D Jana, M Dutta, S Samanta, S Maikap Nanoscale research letters 9 (1), 1-9, 2014 | 97 | 2014 |
| Evolution of complementary resistive switching characteristics using IrOx/GdOx/Al2O3/TiN structure D Jana, S Samanta, S Maikap, HM Cheng Applied Physics Letters 108 (1), 011605, 2016 | 61 | 2016 |
| Improved resistive switching phenomena and mechanism using Cu-Al alloy in a new Cu: AlOx/TaOx/TiN structure S Roy, S Maikap, G Sreekanth, M Dutta, D Jana, YY Chen, JR Yang Journal of Alloys and Compounds 637, 517-523, 2015 | 38 | 2015 |
| Self-compliance-improved resistive switching using Ir/TaO x/W cross-point memory A Prakash, D Jana, S Samanta, S Maikap Nanoscale research letters 8 (1), 1-6, 2013 | 33 | 2013 |
| Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO x/TiO x/TiN Structure D Jana, S Samanta, S Roy, YF Lin, S Maikap Nano-Micro Letters 7 (4), 392-399, 2015 | 31 | 2015 |
| Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance IrO x/GdO x/W cross-point memories D Jana, S Maikap, A Prakash, YY Chen, HC Chiu, JR Yang Nanoscale research letters 9 (1), 1-8, 2014 | 30 | 2014 |
| Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials A Prakash, S Maikap, W Banerjee, D Jana, CS Lai Nanoscale research letters 8 (1), 1-12, 2013 | 30 | 2013 |
| Impact of device size and thickness of Al2O3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application R Panja, S Roy, D Jana, S Maikap Nanoscale research letters 9 (1), 1-11, 2014 | 26 | 2014 |
| Cross-point resistive switching memory and urea sensing by using annealed GdOx film in IrOx/GdOx/W structure for biomedical applications P Kumar, S Maikap, S Ginnaram, JT Qiu, D Jana, S Chakrabarti, ... Journal of The Electrochemical Society 164 (4), B127-B135, 2017 | 21 | 2017 |
| Formation-polarity-dependent improved resistive switching memory performance using IrOx/GdOx/WOx/W structure D Jana, S Maikap, TC Tien, HY Lee, WS Chen, FT Chen, MJ Kao, MJ Tsai Japanese Journal of Applied Physics 51 (4S), 04DD17, 2012 | 18 | 2012 |
| Copper pillar and memory characteristics using Al2O3 switching material for 3D architecture S Maikap, R Panja, D Jana Nanoscale research letters 9 (1), 1-9, 2014 | 14 | 2014 |
| Resistive and New Optical Switching Memory Characteristics Using Thermally Grown Ge0. 2Se0. 8 Film in Cu/GeSex/W Structure D Jana, S Chakrabarti, SZ Rahaman, S Maikap Nanoscale research letters 10 (1), 1-8, 2015 | 13 | 2015 |
| RRAM Cross-Point Arrays H Wu, Y Liao, B Gao, D Jana, H Qian 3D Flash Memories, 223-260, 2016 | 11 | 2016 |
| Impact of AlO x interfacial layer and switching mechanism in W/AlO x/TaO x/TiN RRAMs S Chakrabarti, D Jana, M Dutta, S Maikap, YY Chen, JR Yang Memory Workshop (IMW), 2014 IEEE 6th International, 1-4, 2014 | 9 | 2014 |
| Memory structure S Maikap, D Jana US Patent App. 14/943,567, 2017 | 4 | 2017 |
| Isotropic silicon nitride removal M Korolik, PE Gee, BJ Bhuyan, J Sudijono, DWY Yong, KW Ang, D Jana, ... US Patent App. 16/598,167, 2021 | | 2021 |
| Low current cross-point memory using gadolinium-oxide switching material D Jana, S Maikap, YY Chen, JR Yang VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of …, 2014 | | 2014 |
| Rough surface improved formation-free low power resistive switching memory using IrO x/GdO x/W structure D Jana, S Maikap, A Prakash, HY Lee, WS Chen, FT Chen, MC Kao, ... VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International …, 2013 | | 2013 |
