| Band parameters for III–V compound semiconductors and their alloys I Vurgaftman, JR Meyer, LR Ram-Mohan Journal of applied physics 89 (11), 5815-5875, 2001 | 9285 | 2001 |
| Band parameters for nitrogen-containing semiconductors I Vurgaftman, JR Meyer Journal of Applied Physics 94 (6), 3675-3696, 2003 | 3465 | 2003 |
| Type‐II quantum‐well lasers for the mid‐wavelength infrared JR Meyer, CA Hoffman, FJ Bartoli, LR Ram‐Mohan Applied physics letters 67 (6), 757-759, 1995 | 571 | 1995 |
| Auger lifetime enhancement in InAs–Ga1−xInxSb superlattices ER Youngdale, JR Meyer, CA Hoffman, FJ Bartoli, CH Grein, PM Young, ... Applied physics letters 64 (23), 3160-3162, 1994 | 459 | 1994 |
| Semimetal-to-semiconductor transition in bismuth thin films CA Hoffman, JR Meyer, FJ Bartoli, A Di Venere, XJ Yi, CL Hou, HC Wang, ... Physical Review B 48 (15), 11431, 1993 | 332 | 1993 |
| Interband cascade lasers I Vurgaftman, R Weih, M Kamp, JR Meyer, CL Canedy, CS Kim, M Kim, ... Journal of Physics D: Applied Physics 48 (12), 123001, 2015 | 325 | 2015 |
| Rebalancing of internally generated carriers for mid-infrared interband cascade lasers with very low power consumption I Vurgaftman, WW Bewley, CL Canedy, CS Kim, M Kim, CD Merritt, J Abell, ... Nature communications 2 (1), 585, 2011 | 305 | 2011 |
| Optical heating in semiconductors: Laser damage in Ge, Si, InSb, and GaAs JR Meyer, MR Kruer, FJ Bartoli Journal of Applied Physics 51 (10), 5513-5522, 1980 | 301 | 1980 |
| Type-II and type-I interband cascade lasers JR Meyer, I Vurgaftman, RQ Yang, LR Ram-Mohan Electronics Letters 32 (1), 45-46, 1996 | 232 | 1996 |
| Graded band gap for dark-current suppression in long-wave infrared W-structured type-II superlattice photodiodes I Vurgaftman, EH Aifer, CL Canedy, JG Tischler, JR Meyer, JH Warner, ... Applied physics letters 89 (12), 2006 | 211 | 2006 |
| Auger coefficients in type-II quantum wells JR Meyer, CL Felix, WW Bewley, I Vurgaftman, EH Aifer, LJ Olafsen, ... Applied physics letters 73 (20), 2857-2859, 1998 | 202 | 1998 |
| Interband cascade laser emitting at λ= 3.75 μm in continuous wave above room temperature M Kim, CL Canedy, WW Bewley, CS Kim, JR Lindle, J Abell, I Vurgaftman, ... Applied physics letters 92 (19), 2008 | 195 | 2008 |
| Antisite defects of Bi 2 Te 3 thin films S Cho, Y Kim, A DiVenere, GK Wong, JB Ketterson, JR Meyer Applied physics letters 75 (10), 1401-1403, 1999 | 188 | 1999 |
| Electron Band Structure Parameters Chapter 2 I Vurgaftman, JR Meyer John Wiley & Sons, 2007 | 179* | 2007 |
| Improved quantitative mobility spectrum analysis for Hall characterization I Vurgaftman, JR Meyer, CA Hoffman, D Redfern, J Antoszewski, ... Journal of Applied Physics 84 (9), 4966-4973, 1998 | 172 | 1998 |
| Methods for magnetotransport characterization of IR detector materials JR Meyer, CA Hoffman, FJ Bartoli, DA Arnold, S Sivananthan, JP Fauri Semiconductor Science and Technology 8 (6S), 805, 1993 | 172 | 1993 |
| W-structured type-II superlattice long-wave infrared photodiodes with high quantum efficiency EH Aifer, JG Tischler, JH Warner, I Vurgaftman, WW Bewley, JR Meyer, ... Applied physics letters 89 (5), 2006 | 166 | 2006 |
| Near-room-temperature mid-infrared interband cascade laser LJ Olafsen, EH Aifer, I Vurgaftman, WW Bewley, CL Felix, JR Meyer, ... Applied physics letters 72 (19), 2370-2372, 1998 | 161 | 1998 |
| Optical heating in semiconductors JR Meyer, FJ Bartoli, MR Kruer Physical Review B 21 (4), 1559, 1980 | 161 | 1980 |
| Quantum cascade laser on silicon A Spott, J Peters, ML Davenport, EJ Stanton, CD Merritt, WW Bewley, ... Optica 3 (5), 545-551, 2016 | 158 | 2016 |
