Remote epitaxy through graphene enables two-dimensional material-based layer transfer JK Yunjo Kim, Samuel S. Cruz, Kyusang Lee, Babatunde O. Alawode, Chanyeol ... Nature 544 (7650), 340-343, 2017 | 550 | 2017 |
Heterogeneous integration of single-crystalline complex-oxide membranes HS Kum, H Lee, S Kim, S Lindemann, W Kong, K Qiao, P Chen, J Irwin, ... Nature 578 (7793), 75-81, 2020 | 294 | 2020 |
Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials J Shim, SH Bae, W Kong, D Lee, K Qiao, D Nezich, YJ Park, R Zhao, ... Science 362 (6415), 665-670, 2018 | 286 | 2018 |
Polarity governs atomic interaction through two-dimensional materials W Kong, H Li, K Qiao, Y Kim, K Lee, Y Nie, D Lee, T Osadchy, RJ Molnar, ... Nature materials 17 (11), 999-1004, 2018 | 241 | 2018 |
Chip-less wireless electronic skins by remote epitaxial freestanding compound semiconductors Y Kim, JM Suh, J Shin, Y Liu, H Yeon, K Qiao, HS Kum, C Kim, HE Lee, ... Science 377 (6608), 859-864, 2022 | 140 | 2022 |
Vertical full-colour micro-LEDs via 2D materials-based layer transfer J Shin, H Kim, S Sundaram, J Jeong, BI Park, CS Chang, J Choi, T Kim, ... Nature 614 (7946), 81-87, 2023 | 128 | 2023 |
Graphene-assisted spontaneous relaxation towards dislocation-free heteroepitaxy SH Bae, K Lu, Y Han, S Kim, K Qiao, C Choi, Y Nie, H Kim, HS Kum, ... Nature nanotechnology 15 (4), 272-276, 2020 | 101 | 2020 |
Impact of 2D–3D heterointerface on remote epitaxial interaction through graphene H Kim, K Lu, Y Liu, HS Kum, KS Kim, K Qiao, SH Bae, S Lee, YJ Ji, ... ACS nano 15 (6), 10587-10596, 2021 | 75 | 2021 |
Graphene buffer layer on SiC as a release layer for high-quality freestanding semiconductor membranes K Qiao, Y Liu, C Kim, RJ Molnar, T Osadchy, W Li, X Sun, H Li, ... Nano letters 21 (9), 4013-4020, 2021 | 46 | 2021 |
Coupling SPP with LSPR for enhanced field confinement: A simulation study M Xia, P Zhang, K Qiao, Y Bai, YH Xie The Journal of Physical Chemistry C 120 (1), 527-533, 2016 | 33 | 2016 |
High-throughput manufacturing of epitaxial membranes from a single wafer by 2D materials-based layer transfer process H Kim, Y Liu, K Lu, CS Chang, D Sung, M Akl, K Qiao, KS Kim, BI Park, ... Nature Nanotechnology 18 (5), 464-470, 2023 | 24 | 2023 |
Observation of a flat band and bandgap in millimeter-scale twisted bilayer graphene K Sato, N Hayashi, T Ito, N Masago, M Takamura, M Morimoto, ... Communications Materials 2 (1), 117, 2021 | 17 | 2021 |
Multiple layered metallic nanostructures for strong surface-enhanced Raman spectroscopy enhancement M Xia, K Qiao, Z Cheng, YH Xie Applied Physics Express 9 (6), 065001, 2016 | 13 | 2016 |
Multiplication of freestanding semiconductor membranes from a single wafer by advanced remote epitaxy H Kim, Y Liu, K Lu, CS Chang, K Qiao, KS Kim, BI Park, J Jeong, M Zhu, ... arXiv preprint arXiv:2204.08002, 2022 | 2 | 2022 |
Systems and methods for growth of silicon carbide over a layer comprising graphene and/or hexagonal boron nitride and related articles RL Myers-Ward, J Kim, K Qiao, W Kong, DK Gaskill, T Maekawa, ... US Patent App. 17/254,623, 2021 | 1 | 2021 |
Systems and methods for growth of silicon carbide over a layer comprising graphene and/or hexagonal boron nitride and related articles RL Myers-Ward, J Kim, K Qiao, W Kong, DK Gaskill, T Maekawa, ... US Patent App. 18/486,471, 2024 | | 2024 |
Gallium Nitride Remote Epitaxy K Qiao Massachusetts Institute of Technology, 2022 | | 2022 |
Artificial Heterostructuring of Single-crystalline Complex-oxide Membranes HS Kum, W Kong, K Qiao, SH Bae, J Kim Nanotechnology, Nanostructure, Nanomaterials, 127, 0 | | |
Spontaneous Relaxation towards Dislocation-free Heteroepitaxy SH Bae, K Lu, S Kim, K Qiao, C Choi, H Kim, HS Kum, W Kong, J Shim, ... Nanotechnology, Nanostructure, Nanomaterials, 124, 0 | | |