| Breakdown of the quantum Hall effect due to electron heating S Komiyama, T Takamasu, S Hiyamizu, S Sasa Solid state communications 54 (6), 479-484, 1985 | 226 | 1985 |
| Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (1 1 1)-oriented Si substrate toward UV-detector applications K Koike, K Hama, I Nakashima, G Takada, K Ogata, S Sasa, M Inoue, ... Journal of crystal growth 278 (1-4), 288-292, 2005 | 214 | 2005 |
| Violation of the integral quantum Hall effect: influence of backscattering and the role of voltage contacts S Komiyama, H Hirai, S Sasa, S Hiyamizu Physical Review B 40 (18), 12566, 1989 | 189 | 1989 |
| Inter-edge-state scattering and nonlinear effects in a two-dimensional electron gas at high magnetic fields S Komiyama, H Hirai, M Ohsawa, Y Matsuda, S Sasa, T Fujii Physical Review B 45 (19), 11085, 1992 | 158 | 1992 |
| High-performance ZnO∕ ZnMgO field-effect transistors using a hetero-metal-insulator-semiconductor structure S Sasa, M Ozaki, K Koike, M Yano, M Inoue Applied Physics Letters 89 (5), 2006 | 153 | 2006 |
| A pseudomorphic In0. 53Ga0. 47As/AlAs resonant tunneling barrier with a peak-to-valley current ratio of 14 at room temperature T Inata, S Muto, Y Nakata, S Sasa, T Fujii, S Hiyamizu Japanese journal of applied physics 26 (8A), L1332, 1987 | 138 | 1987 |
| ZnO and ZnMgO growth on a-plane sapphire by molecular beam epitaxy K Ogata, K Koike, T Tanite, T Komuro, F Yan, S Sasa, M Inoue, M Yano Journal of Crystal Growth 251 (1-4), 623-627, 2003 | 136 | 2003 |
| Characteristics of a Zn0. 7Mg0. 3O∕ ZnO heterostructure field-effect transistor grown on sapphire substrate by molecular-beam epitaxy K Koike, I Nakashima, K Hashimoto, S Sasa, M Inoue, M Yano Applied Physics Letters 87 (11), 2005 | 118 | 2005 |
| Electrical properties of Si-doped AlxGa1-xAs layers grown by MBE T Ishikawa, J Saito, S Sasa, S Hiyamizu Japanese Journal of Applied Physics 21 (11A), L675, 1982 | 111 | 1982 |
| Piezoelectric carrier confinement by lattice mismatch at ZnO/Zn0. 6Mg0. 4O heterointerface K Koike, K Hama, I Nakashima, G Takada, M Ozaki, K Ogata, S Sasa, ... Japanese journal of applied physics 43 (10B), L1372, 2004 | 94 | 2004 |
| High-reliability InGaP/GaAs HBTs fabricated by self-aligned process T Takahashi, S Sasa, A Kawano, T Iwai, T Fujii Proceedings of 1994 IEEE International Electron Devices Meeting, 191-194, 1994 | 93 | 1994 |
| Implant isolation of ZnO SO Kucheyev, C Jagadish, JS Williams, PNK Deenapanray, M Yano, ... Journal of applied physics 93 (5), 2972-2976, 2003 | 84 | 2003 |
| Room-temperature operation of a memory-effect AlGaAs/GaAs heterojunction field-effect transistor with self-assembled InAs nanodots K Koike, K Saitoh, S Li, S Sasa, M Inoue, M Yano Applied Physics Letters 76 (11), 1464-1466, 2000 | 83 | 2000 |
| Polarization-induced two-dimensional electron gas at Zn1− xMgxO/ZnO heterointerface M Yano, K Hashimoto, K Fujimoto, K Koike, S Sasa, M Inoue, Y Uetsuji, ... Journal of crystal growth 301, 353-357, 2007 | 82 | 2007 |
| Electrical isolation of ZnO by ion bombardment SO Kucheyev, PNK Deenapanray, C Jagadish, JS Williams, M Yano, ... Applied Physics Letters 81 (18), 3350-3352, 2002 | 79 | 2002 |
| Chemical states of nitrogen in ZnO studied by near-edge X-ray absorption fine structure and core-level photoemission spectroscopies M Petravic, PNK Deenapanray, VA Coleman, C Jagadish, KJ Kim, B Kim, ... Surface science 600 (7), L81-L85, 2006 | 65 | 2006 |
| Si atomic-planar-doping in GaAs made by molecular beam epitaxy S Sasa, S Muto, K Kondo, H Ishikawa, S Hiyamizu Japanese journal of applied physics 24 (8A), L602, 1985 | 64 | 1985 |
| Mechanisms of electrical isolation in -irradiated ZnO A Zubiaga, F Tuomisto, VA Coleman, HH Tan, C Jagadish, K Koike, ... Physical Review B—Condensed Matter and Materials Physics 78 (3), 035125, 2008 | 63 | 2008 |
| Temperature dependence of electron mobility in InGaAs/InAlAs heterostructures T Matsuoka, E Kobayashi, K Taniguchi, C Hamaguchi, S Sasa Japanese journal of applied physics 29 (10R), 2017, 1990 | 63 | 1990 |
| Improved 2DEG mobility in inverted GaAs/n-AlGaAs heterostructures grown by MBE S Sasa, J Saito, K Nanbu, T Ishikawa, S Hiyamizu Japanese journal of applied physics 23 (8A), L573, 1984 | 62 | 1984 |
Koike KazutoOsaka Institute of Technology在 oit.ac.jp 的电子邮件经过验证
Koike KazutoOsaka Institute of Technology在 oit.ac.jp 的电子邮件经过验证