| A paramagnetic neutral VAlON center in wurtzite AlN for spin qubit application Y Tu, Z Tang, XG Zhao, Y Chen, ZQ Zhu, JH Chu, JC Fang Applied Physics Letters 103 (7), 2013 | 35 | 2013 |
| A cobalt hydroxide-based compressible electrode material for asymmetrical all-solid supercapacitors Y Yang, Y Tu, P Zhu, L Zhang, T Li, H Zheng, R Sun, C Wong Sustainable Energy & Fuels 2 (10), 2345-2357, 2018 | 34 | 2018 |
| Influence of laser power on atom probe tomographic analysis of boron distribution in silicon Y Tu, H Takamizawa, B Han, Y Shimizu, K Inoue, T Toyama, F Yano, ... Ultramicroscopy 173, 58-63, 2017 | 28 | 2017 |
| Quantitative analysis of hydrogen in SiO2/SiN/SiO2 stacks using atom probe tomography Y Kunimune, Y Shimada, Y Sakurai, M Inoue, A Nishida, B Han, Y Tu, ... AIP Advances 6 (4), 2016 | 17 | 2016 |
| 1.54 μm photoluminescence from Er:Ox centers at extremely low concentration in silicon at 300 K M Celebrano, L Ghirardini, M Finazzi, Y Shimizu, Y Tu, K Inoue, Y Nagai, ... Optics letters 42 (17), 3311-3314, 2017 | 16 | 2017 |
| Boron distributions in individual core–shell Ge/Si and Si/Ge heterostructured nanowires B Han, Y Shimizu, J Wipakorn, K Nishibe, Y Tu, K Inoue, N Fukata, ... Nanoscale 8 (47), 19811-19815, 2016 | 13 | 2016 |
| Role of W and Mn for reliable 1X nanometer-node ultra-large-scale integration Cu interconnects proved by atom probe tomography K Shima, Y Tu, H Takamizawa, H Shimizu, Y Shimizu, T Momose, K Inoue, ... Applied Physics Letters 105 (13), 2014 | 12 | 2014 |
| A neutral oxygen-vacancy center in diamond: A plausible qubit candidate and its spintronic and electronic properties YG Zhang, Z Tang, XG Zhao, GD Cheng, Y Tu, WT Cong, W Peng, ZQ Zhu, ... Applied Physics Letters 105 (5), 2014 | 12 | 2014 |
| The design and realization of large-scale patterned organic solar cells in series and parallel configurations J Wan, G Fang, P Qin, Q Zheng, N Liu, N Sun, Y Tu, X Fan, F Cheng, ... Solar energy materials and solar cells 101, 289-294, 2012 | 9 | 2012 |
| Multiscale characterization of the joint bonded by Cu@ Ag core@ shell nanoparticles Y Tu, PL Zhu, G Li, QL Ouyang, H Chang, FR Zhou, Y Shimizu, K Inoue, ... Applied Physics Letters 116 (21), 2020 | 8 | 2020 |
| Effect of carbon on boron diffusion and clustering in silicon: Temperature dependence study Y Tu, Y Shimizu, Y Kunimune, Y Shimada, T Katayama, T Ide, M Inoue, ... Journal of Applied Physics 124 (15), 2018 | 5 | 2018 |
| Atom probe tomographic assessment of the distribution of germanium atoms implanted in a silicon matrix through nano-apertures Y Tu, B Han, Y Shimizu, K Inoue, Y Fukui, M Yano, T Tanii, T Shinada, ... Nanotechnology 28 (38), 385301, 2017 | 5 | 2017 |
| Revisiting room-temperature 1.54 μιη photoluminescence of ErOxcenters in silicon at extremely low concentration E Prati, M Celebrano, L Ghirardini, P Biagioni, M Finazzi, Y Shimizu, Y Tu, ... 2017 Silicon Nanoelectronics Workshop (SNW), 105-106, 2017 | 4 | 2017 |
| Atom probe study of erbium and oxygen co-implanted silicon Y Shimizu, Y Tu, A Abdelghafar, M Yano, Y Suzuki, T Tanii, T Shinada, ... 2017 Silicon Nanoelectronics Workshop (SNW), 99-100, 2017 | 4 | 2017 |
| Blocking of deuterium diffusion in poly-Si/Al2O3/HfxSi1− xO2/SiO2 high-k stacks as evidenced by atom probe tomography Y Tu, B Han, Y Shimizu, Y Kunimune, Y Shimada, T Katayama, T Ide, ... Applied Physics Letters 112 (3), 2018 | 2 | 2018 |
| Nanoscale Analysis of Impurity Distribution in Silicon Devices by Atom Probe Tomography TU Yuan Tohoku University, 2018 | | 2018 |
| Effect of carbon on boron clustering and diffusion in silicon studied by atom probe tomography Y Tu, Y Shimizu, M Inoue, Y Kunimune, Y Shimada, T Katayama, T Ide, ... JSAP Annual Meetings Extended Abstracts The 78th JSAP Autumn Meeting 2017 …, 2017 | | 2017 |
| Atom Probe Tomographic Study on Implanted Deuterium in Al2O3/HfxSi1-xO2/SiO2 Stacks Y Tu, B Han, Y Shimizu, Y Kunimune, Y Shimada, M Inoue, K Inoue, ... JSAP Annual Meetings Extended Abstracts The 64th JSAP Spring Meeting 2017 …, 2017 | | 2017 |
| Quantitative analysis of hydrogen in SiO</sub> 2<//sub>/SiN/SiO</sub> 2<//sub> stacks using atom probe tomography Y Kunimune, Y Shimada, Y Sakurai, M Inoue, A Nishida, B Han, Y Tu, ... Aip Advances 6 (4), 2016 | | 2016 |
| Distribution of Single-Ion Implanted Dopants in Silicon Investigated by Atom Probe Tomography Y TU, B Han, Y Shimizu, K Inoue, M Yano, Y Chiba, T Tanii, T Shinada, ... JSAP Annual Meetings Extended Abstracts The 63rd JSAP Spring Meeting 2016 …, 2016 | | 2016 |
Yasuo ShimizuSony Semiconductor Solutions Corporation在 sony.com 的电子邮件经过验证
Yasuo ShimizuSony Semiconductor Solutions Corporation在 sony.com 的电子邮件经过验证
Bin Han (韩斌）Shaanxi University of Science and Technology, Xi'an, China在 sust.edu.cn 的电子邮件经过验证