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Comparison of static and dynamic 18F-FDG PET/CT for quantification of pulmonary inflammation in acute lung injury A Braune, F Hofheinz, T Bluth, T Kiss, J Wittenstein, M Scharffenberg, ... Journal of Nuclear Medicine 60 (11), 1629-1634, 2019 | 58* | 2019 |
Phase separation in InGaN multiple quantum wells annealed at high nitrogen pressures LT Romano, MD McCluskey, CG Van de Walle, JE Northrup, DP Bour, ... Applied Physics Letters 75 (25), 3950-3952, 1999 | 56 | 1999 |
InGaN laser diode mini-arrays P Perlin, L Marona, K Holc, P Wisniewski, T Suski, M Leszczynski, ... Applied physics express 4 (6), 062103, 2011 | 45 | 2011 |
Application of a composite plasmonic substrate for the suppression of an electromagnetic mode leakage in InGaN laser diodes P Perlin, K Holc, M Sarzyński, W Scheibenzuber, Ł Marona, R Czernecki, ... Applied Physics Letters 95 (26), 2009 | 42 | 2009 |
High-optical-power InGaN superluminescent diodes with “j-shape” waveguide A Kafar, S Stanczyk, G Targowski, T Oto, I Makarowa, P Wisniewski, ... Applied Physics Express 6 (9), 092102, 2013 | 40 | 2013 |
Role of conduction-band filling in the dependence of InN photoluminescence on hydrostatic pressure A Kamińska, G Franssen, T Suski, I Gorczyca, NE Christensen, A Svane, ... Physical Review B—Condensed Matter and Materials Physics 76 (7), 075203, 2007 | 36 | 2007 |
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Influence of hydrogen and TMIn on indium incorporation in MOVPE growth of InGaN layers R Czernecki, S Kret, P Kempisty, E Grzanka, J Plesiewicz, G Targowski, ... Journal of crystal growth 402, 330-336, 2014 | 30 | 2014 |
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AlGaInN laser diode technology for GHz high-speed visible light communication through plastic optical fiber and water SP Najda, P Perlin, T Suski, L Marona, M Leszczyński, P Wisniewski, ... Optical Engineering 55 (2), 026112-026112, 2016 | 29 | 2016 |
Degradation mechanisms of InGaN laser diodes P Perlin, Ł Marona, M Leszczynski, T Suski, P Wisniewski, R Czernecki, ... Proceedings of the IEEE 98 (7), 1214-1219, 2010 | 28 | 2010 |
Design and optimization of InGaN superluminescent diodes A Kafar, S Stańczyk, P Wiśniewski, T Oto, I Makarowa, G Targowski, ... physica status solidi (a) 212 (5), 997-1004, 2015 | 26 | 2015 |
Nitride‐based quantum structures and devices on modified GaN substrates P Perlin, G Franssen, J Szeszko, R Czernecki, G Targowski, M Kryśko, ... physica status solidi (a) 206 (6), 1130-1134, 2009 | 22 | 2009 |
III-nitride optoelectronic devices containing wide quantum wells—unexpectedly efficient light sources G Muziol, M Hajdel, M Siekacz, H Turski, K Pieniak, A Bercha, ... Japanese Journal of Applied Physics 61 (SA), SA0801, 2021 | 20 | 2021 |
Highly doped GaN: a material for plasmonic claddings for blue/green InGaN laser diodes P Perlin, T Czyszanowski, L Marona, S Grzanka, A Kafar, S Stanczyk, ... Gallium Nitride Materials and Devices VII 8262, 161-168, 2012 | 20 | 2012 |
GaN laser diode technology for visible-light communications SP Najda, P Perlin, T Suski, L Marona, M Leszczyński, P Wisniewski, ... Electronics 11 (9), 1430, 2022 | 18 | 2022 |
Modelling the growth of nitrides in ammonia‐rich environment S Krukowski, P Kempisty, P Strąk, G Nowak, R Czernecki, M Leszczynski, ... Crystal Research and Technology: Journal of Experimental and Industrial …, 2007 | 17 | 2007 |
Compositional and strain analysis of In (Ga) N/GaN short period superlattices GP Dimitrakopulos, IG Vasileiadis, C Bazioti, J Smalc-Koziorowska, S Kret, ... Journal of Applied Physics 123 (2), 2018 | 16 | 2018 |
InAlGaN superluminescent diodes fabricated on patterned substrates: an alternative semiconductor broadband emitter A Kafar, S Stanczyk, M Sarzynski, S Grzanka, J Goss, I Makarowa, ... Photonics Research 5 (2), A30-A34, 2017 | 16 | 2017 |