| Vertical high-mobility wrap-gated InAs nanowire transistor T Bryllert, LE Wernersson, LE Froberg, L Samuelson IEEE Electron Device Letters 27 (5), 323-325, 2006 | 461 | 2006 |
| Giant, Level-Dependent g Factors in InSb Nanowire Quantum Dots HA Nilsson, P Caroff, C Thelander, M Larsson, JB Wagner, ... Nano letters 9 (9), 3151-3156, 2009 | 316 | 2009 |
| III–V compound semiconductor transistors—from planar to nanowire structures H Riel, LE Wernersson, M Hong, JA Del Alamo Mrs Bulletin 39 (8), 668-677, 2014 | 272 | 2014 |
| Vertical wrap-gated nanowire transistors T Bryllert, LE Wernersson, T Löwgren, L Samuelson Nanotechnology 17 (11), S227, 2006 | 245 | 2006 |
| Vertical enhancement-mode InAs nanowire field-effect transistor with 50-nm wrap gate C Thelander, LE FrÖbergFroberg, C Rehnstedt, L Samuelson, ... IEEE Electron Device Letters 29 (3), 206-208, 2008 | 237 | 2008 |
| High‐quality InAs/InSb nanowire heterostructures grown by metal–organic vapor‐phase epitaxy P Caroff, JB Wagner, KA Dick, HA Nilsson, M Jeppsson, K Deppert, ... Small 4 (7), 878-882, 2008 | 218 | 2008 |
| InAs/GaSb heterostructure nanowires for tunnel field-effect transistors BM Borg, KA Dick, B Ganjipour, ME Pistol, LE Wernersson, C Thelander Nano letters 10 (10), 4080-4085, 2010 | 194 | 2010 |
| InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch P Caroff, ME Messing, BM Borg, KA Dick, K Deppert, LE Wernersson Nanotechnology 20 (49), 495606, 2009 | 184 | 2009 |
| Diameter-dependent photocurrent in InAsSb nanowire infrared photodetectors J Svensson, N Anttu, N Vainorius, BM Borg, LE Wernersson Nano letters 13 (4), 1380-1385, 2013 | 179 | 2013 |
| Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor E Lind, AI Persson, L Samuelson, LE Wernersson Nano Letters 6 (9), 1842-1846, 2006 | 177 | 2006 |
| High-current GaSb/InAs (Sb) nanowire tunnel field-effect transistors AW Dey, BM Borg, B Ganjipour, M Ek, KA Dick, E Lind, C Thelander, ... IEEE Electron device letters 34 (2), 211-213, 2013 | 148 | 2013 |
| Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at Vds = 0.3 V E Memisevic, J Svensson, M Hellenbrand, E Lind, LE Wernersson 2016 IEEE International Electron Devices Meeting (IEDM), 19.1. 1-19.1. 4, 2016 | 139 | 2016 |
| Vertical InAs Nanowire Wrap Gate Transistors with ft > 7 GHz and fmax > 20 GHz M Egard, S Johansson, AC Johansson, KM Persson, AW Dey, BM Borg, ... Nano Letters 10 (3), 809-812, 2010 | 137 | 2010 |
| Synthesis and properties of antimonide nanowires BM Borg, LE Wernersson Nanotechnology 24 (20), 202001, 2013 | 129 | 2013 |
| High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires B Ganjipour, AW Dey, BM Borg, M Ek, ME Pistol, KA Dick, LE Wernersson, ... Nano letters 11 (10), 4222-4226, 2011 | 128 | 2011 |
| Assembly of nanoscaled field effect transistors LE Wernersson, E Lind, T Bryllert, J Ohlsson, T Löwgren, L Samuelson, ... US Patent 8,063,450, 2011 | 126 | 2011 |
| Development of a vertical wrap-gated InAs FET C Thelander, C Rehnstedt, LE Froberg, E Lind, T Martensson, P Caroff, ... IEEE Transactions on Electron Devices 55 (11), 3030-3036, 2008 | 117 | 2008 |
| GaAs/GaSb nanowire heterostructures grown by MOVPE M Jeppsson, KA Dick, JB Wagner, P Caroff, K Deppert, L Samuelson, ... Journal of Crystal Growth 310 (18), 4115-4121, 2008 | 117 | 2008 |
| III-V nanowires—Extending a narrowing road LE Wernersson, C Thelander, E Lind, L Samuelson Proceedings of the IEEE 98 (12), 2047-2060, 2010 | 114 | 2010 |
| Single InAs/GaSb nanowire low-power CMOS inverter AW Dey, J Svensson, BM Borg, M Ek, LE Wernersson Nano letters 12 (11), 5593-5597, 2012 | 108 | 2012 |
