| Analysis of Transient Currents During Ultrafast Switching of Nanocrossbar Devices C Hermes, M Wimmer, S Menzel, K Fleck, G Bruns, M Salinga, U Bottger, ... IEEE electron device letters 32 (8), 1116-1118, 2011 | 59 | 2011 |
| Forming-Free -Based Resistive Switching Devices on CMOS-Compatible W-Plugs C Hermes, R Bruchhaus, R Waser IEEE electron device letters 32 (11), 1588-1590, 2011 | 53 | 2011 |
| Bipolar resistive electrical switching of CuTCNQ memories incorporating a dedicated switching layer R Muller, C Krebs, L Goux, DJ Wouters, J Genoe, P Heremans, S Spiga, ... IEEE electron device letters 30 (6), 620-622, 2009 | 19 | 2009 |
| Bipolar resistive switching in oxides: Mechanisms and scaling R Bruchhaus, R Muenstermann, T Menke, C Hermes, F Lentz, R Weng, ... Current applied physics 11 (2), e75-e78, 2011 | 10 | 2011 |
| Memristive switches with two switching polarities in a forming free device structure R Bruchhaus, CR Hermes, R Waser MRS Online Proceedings Library (OPL) 1337, mrss11-1337-q08-03, 2011 | 10 | 2011 |
| Fast pulse analysis of TiO2based RRAM nano-crossbar devices C Hermes, F Lentz, R Waser, R Bruchhaus, S Menzel, K Fleck, U Böttger, ... 2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding, 1-4, 2011 | 4 | 2011 |
| Interaction between redox-based resistive switching mechanisms CR Hermes Elektronische Materialien, 2012 | 2 | 2012 |
| Poster: Memristive Systems J Ho Yoon, HS Jung, M Hwan Lee, G Hwan Kim, S Ji Song, J Yeong Seok, ... Frontiers in Electronic Materials: A Collection of Extended Abstracts of the …, 2012 | | 2012 |
Sabina SpigaCNR-IMM, Unit of Agrate Brianza在 mdm.imm.cnr.it 的电子邮件经过验证
Sabina SpigaCNR-IMM, Unit of Agrate Brianza在 mdm.imm.cnr.it 的电子邮件经过验证