A single-atom transistor M Fuechsle, JA Miwa, S Mahapatra, H Ryu, S Lee, O Warschkow, ... Nature nanotechnology 7 (4), 242-246, 2012 | 1154 | 2012 |
Ohm’s law survives to the atomic scale B Weber, S Mahapatra, H Ryu, S Lee, A Fuhrer, TCG Reusch, ... Science 335 (6064), 64-67, 2012 | 384 | 2012 |
Atomistic simulation of realistically sized nanodevices using NEMO 3-D—Part I: Models and benchmarks G Klimeck, SS Ahmed, H Bae, N Kharche, S Clark, B Haley, S Lee, ... IEEE Transactions on Electron Devices 54 (9), 2079-2089, 2007 | 293 | 2007 |
Spin blockade and exchange in Coulomb-confined silicon double quantum dots B Weber, YHM Tan, S Mahapatra, TF Watson, H Ryu, R Rahman, ... Nature nanotechnology 9 (6), 430-435, 2014 | 167 | 2014 |
Electronic structure of realistically extended atomistically resolved disordered Si:P -doped layers S Lee, H Ryu, H Campbell, LCL Hollenberg, MY Simmons, G Klimeck Physical Review B—Condensed Matter and Materials Physics 84 (20), 205309, 2011 | 72 | 2011 |
Moving toward nano-TCAD through multimillion-atom quantum-dot simulations matching experimental data M Usman, H Ryu, I Woo, DS Ebert, G Klimeck IEEE Transactions on Nanotechnology 8 (3), 330-344, 2009 | 68 | 2009 |
Multimillion atom simulations with NEMO 3-D S Ahmed, N Kharche, R Rahman, M Usman, S Lee, H Ryu, H Bae, ... arXiv preprint arXiv:0901.1890, 2009 | 64 | 2009 |
EDISON: a web-based HPC simulation execution framework for large-scale scientific computing software YK Suh, H Ryu, H Kim, KW Cho 2016 16th IEEE/ACM International Symposium on Cluster, Cloud and Grid …, 2016 | 45 | 2016 |
III–V FET channel designs for high current densities and thin inversion layers M Rodwell, W Frensley, S Steiger, E Chagarov, S Lee, H Ryu, Y Tan, ... 68th Device Research Conference, 149-152, 2010 | 45 | 2010 |
Quantitative excited state spectroscopy of a single InGaAs quantum dot molecule through multi-million-atom electronic structure calculations M Usman, YHM Tan, H Ryu, SS Ahmed, HJ Krenner, TB Boykin, ... Nanotechnology 22 (31), 315709, 2011 | 40 | 2011 |
Experimental and theoretical study of polarization-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths (1300-1500 nm) M Usman, S Heck, E Clarke, P Spencer, H Ryu, R Murray, G Klimeck Journal of Applied Physics 109 (10), 2011 | 38 | 2011 |
Atomistic modeling of metallic nanowires in silicon H Ryu, S Lee, B Weber, S Mahapatra, LCL Hollenberg, MY Simmons, ... Nanoscale 5 (18), 8666-8674, 2013 | 37 | 2013 |
Advancing nanoelectronic device modeling through peta-scale computing and deployment on nanoHUB BP Haley, S Lee, M Luisier, H Ryu, F Saied, S Clark, H Bae, G Klimeck Journal of Physics: Conference Series 180 (1), 012075, 2009 | 32 | 2009 |
Limits to metallic conduction in atomic-scale quasi-one-dimensional silicon wires B Weber, H Ryu, YHM Tan, G Klimeck, MY Simmons Physical Review Letters 113 (24), 246802, 2014 | 30 | 2014 |
Million atom electronic structure and device calculations on peta-scale computers S Lee, H Ryu, Z Jiang, G Klimeck 2009 13th International Workshop on Computational Electronics, 1-4, 2009 | 22 | 2009 |
Numerical guidelines for setting up a kp simulator with applications to quantum dot heterostructures and topological insulators P Sengupta, H Ryu, S Lee, Y Tan, G Klimeck Journal of Computational Electronics 15 (1), 115-128, 2015 | 21 | 2015 |
Time-efficient simulations of tight-binding electronic structures with Intel Xeon PhiTM many-core processors H Ryu, Y Jeong, JH Kang, KN Cho Computer Physics Communications 209, 79-87, 2016 | 19 | 2016 |
A multi-subband Monte Carlo study on dominance of scattering mechanisms over carrier transport in sub-10-nm Si nanowire FETs H Ryu Nanoscale research letters 11 (1), 1-9, 2016 | 18 | 2016 |
A Tight‐Binding Study of Single‐Atom Transistors H Ryu, S Lee, M Fuechsle, JA Miwa, S Mahapatra, LCL Hollenberg, ... Small 11 (3), 374-381, 2015 | 18 | 2015 |
III-V MOSFETs: Scaling laws, scaling limits, fabrication processes MJW Rodwell, U Singisetti, M Wistey, GJ Burek, A Carter, A Baraskar, ... 2010 22nd International Conference on Indium Phosphide and Related Materials …, 2010 | 17 | 2010 |