| Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor M Asif Khan, JN Kuznia, DT Olson, WJ Schaff, JW Burm, MS Shur Applied Physics Letters 65 (9), 1121-1123, 1994 | 519 | 1994 |
| Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 C MA Khan, MS Shur, JN Kuznia, Q Chen, J Burm, W Schaff Applied Physics Letters 66 (9), 1083-1085, 1995 | 378 | 1995 |
| CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz MA Khan, Q Chen, MS Shur, BT Dermott, JA Higgins, J Burm, WJ Schaff, ... IEEE Electron Device Letters 17 (12), 584-585, 1996 | 158 | 1996 |
| Ultra-low resistive ohmic contacts on n-GaN using Si implantation J Burm, K Chu, WA Davis, WJ Schaff, LF Eastman, TJ Eustis Applied physics letters 70 (4), 464-466, 1997 | 148 | 1997 |
| Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1 cutoff frequency MA Khan, Q Chen, MS Shur, BT Dermott, JA Higgins, J Burm, W Schaff, ... Electronics Letters 32 (4), 357-358, 1996 | 146 | 1996 |
| GaN based heterostructure for high power devices MA Khan, Q Chen, MS Shur, BT Dermott, JA Higgins, J Burm, WJ Schaff, ... Solid-State Electronics 41 (10), 1555-1559, 1997 | 104 | 1997 |
| Optimization of high-speed metal-semiconductor-metal photodetectors J Burm, KI Litvin, WJ Schaff, LF Eastman IEEE photonics technology letters 6 (6), 722-724, 1994 | 84 | 1994 |
| 0.12-μm gate III-V nitride HFET's with high contact resistances J Burm, K Chu, WJ Schaff, LF Eastman, MA Khan, Q Chen, JW Yang, ... IEEE Electron Device Letters 18 (4), 141-143, 1997 | 83 | 1997 |
| 75 Å GaN channel modulation doped field effect transistors J Burm, WJ Schaff, LF Eastman, H Amano, I Akasaki Applied physics letters 68 (20), 2849-2851, 1996 | 76 | 1996 |
| Low-frequency gain in MSM photodiodes due to charge accumulation and image force lowering J Burm, LF Eastman IEEE Photonics Technology Letters 8 (1), 113-115, 1996 | 76 | 1996 |
| Cmos image sensor BH Kim, J Burm, WT Choi US Patent App. 12/781,739, 2011 | 60 | 2011 |
| Microwave performance of 0.25 µm doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures Q Chen, R Gaska, MA Khan, MS Shur, A Ping, I Adesida, J Burm, ... Electronics Letters 33 (7), 637-639, 1997 | 59 | 1997 |
| High frame-rate VGA CMOS image sensor using non-memory capacitor two-step single-slope ADCs J Lee, H Park, B Song, K Kim, J Eom, K Kim, J Burm IEEE Transactions on Circuits and Systems I: Regular Papers 62 (9), 2147-2155, 2015 | 54 | 2015 |
| Recessed gate GaN MODFETs J Burm, WJ Schaff, GH Martin, LF Eastman, H Amano, I Akasaki Solid-State Electronics 41 (2), 247-250, 1997 | 54 | 1997 |
| Low power CMOS image sensors using two step single slope ADC with bandwidth-limited comparators & voltage range extended ramp generator for battery-limited application H Park, C Yu, H Kim, Y Roh, J Burm IEEE Sensors Journal 20 (6), 2831-2838, 2019 | 47 | 2019 |
| High-frequency, high-efficiency MSM photodetectors J Burm, KI Litvin, DW Woodard, WJ Schaff, P Mandeville, MA Jaspan, ... IEEE journal of quantum electronics 31 (8), 1504-1509, 1995 | 47 | 1995 |
| An ultralow power time-domain temperature sensor with time-domain delta–sigma TDC W Song, J Lee, N Cho, J Burm IEEE Transactions on Circuits and Systems II: Express Briefs 64 (10), 1117-1121, 2015 | 46 | 2015 |
| Dark current reduction in APD with BCB passivation HS Kim, JH Choi, HM Bang, Y Jee, SW Yun, J Burm, MD Kim, AG Choo Electronics Letters 37 (7), 1, 2001 | 46 | 2001 |
| A 0.18-/spl mu/m cmos 10-gb/s dual-mode 10-pam serial link transceiver B Song, K Kim, J Lee, J Burm IEEE Transactions on Circuits and Systems I: Regular Papers 60 (2), 457-468, 2012 | 44 | 2012 |
| Suppression of avalanche multiplication at the periphery of diffused junction by floating guard rings in a planar InGaAs-InP avalanche photodiode SR Cho, SK Yang, JS Ma, SD Lee, JS Yu, AG Choo, TI Kim, J Burm IEEE Photonics Technology Letters 12 (5), 534-536, 2000 | 32 | 2000 |
