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Song Xiongfei
Song Xiongfei
在 fudan.edu.cn 的电子邮件经过验证
标题
引用次数
引用次数
年份
A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications
C Liu, X Yan, X Song, S Ding, DW Zhang, P Zhou
Nature nanotechnology 13 (5), 404-410, 2018
3612018
Progress of large‐scale synthesis and electronic device application of two‐dimensional transition metal dichalcogenides
X Song, Z Guo, Q Zhang, P Zhou, W Bao, DW Zhang
Small 13 (35), 1700098, 2017
702017
WSe2/MoS2 and MoTe2/SnSe2 van der Waals heterostructure transistors with different band alignment
C Li, X Yan, X Song, W Bao, S Ding, DW Zhang, P Zhou
Nanotechnology 28 (41), 415201, 2017
672017
Optical properties of thickness-controlled MoS2 thin films studied by spectroscopic ellipsometry
D Li, X Song, J Xu, Z Wang, R Zhang, P Zhou, H Zhang, R Huang, ...
Applied Surface Science 421, 884-890, 2017
602017
Negative capacitance 2D MoS2transistors with sub-60mV/dec subthreshold swing over 6 orders, 250 μA/μm current density, and nearly-hysteresis-free
Z Yu, H Wang, W Li, S Xu, X Song, S Wang, P Wang, P Zhou, Y Shi, ...
2017 IEEE International Electron Devices Meeting (IEDM), 23.6. 1-23.6. 4, 2017
562017
A novel synthesis method for large-area MoS2 film with improved electrical contact
X Song, W Zan, H Xu, S Ding, P Zhou, W Bao, DW Zhang
2D Materials 4 (2), 025051, 2017
232017
Controlling the work function of molybdenum disulfide by in situ metal deposition
P Zhou, X Song, X Yan, C Liu, L Chen, Q Sun, DW Zhang
Nanotechnology 27 (34), 344002, 2016
202016
Various and Tunable Transport Properties of WSe2 Transistor Formed by Metal Contacts
C Liu, X Yan, E Zhang, X Song, Q Sun, S Ding, W Bao, F Xiu, P Zhou, ...
Small 13 (18), 1604319, 2017
182017
Electrical level of defects in single-layer two-dimensional TiO2
XF Song, LF Hu, DH Li, L Chen, QQ Sun, P Zhou, DW Zhang
Scientific Reports 5 (1), 15989, 2015
102015
Study on electrical defects level in single layer two-dimensional Ta2O5
D Li, X Song, L Hu, Z Wang, R Zhang, L Chen, DW Zhang, P Zhou
Chinese Physics B 25 (4), 047304, 2016
92016
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