| Investigation and review of the thermal, mechanical, electrical, optical, and structural properties of atomic layer deposited high-k dielectrics: Beryllium oxide, aluminum … JT Gaskins, PE Hopkins, DR Merrill, SR Bauers, E Hadland, DC Johnson, ... ECS Journal of Solid State Science and Technology 6 (10), N189, 2017 | 111 | 2017 |
| L {sub g}= 100 nm In {sub 0.7} Ga {sub 0.3} As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer HM Kwon, D Veksler, D Gilmer, PD Kirsch, DH Kim, TW Hudnall, ... Applied Physics Letters 104 (16), 2014 | 61 | 2014 |
| Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al2O3/HfO2 (EOT < 1 nm) for low-power logic applications TW Kim, DH Kim, DH Koh, HM Kwon, RH Baek, D Veksler, C Huffman, ... 2013 IEEE International Electron Devices Meeting, 16.3. 1-16.3. 4, 2013 | 43 | 2013 |
| ETB-QW InAs MOSFET with scaled body for improved electrostatics TW Kim, DH Kim, DH Koh, RJW Hill, RTP Lee, MH Wong, T Cunningham, ... 2012 International Electron Devices Meeting, 32.3. 1-32.3. 4, 2012 | 40 | 2012 |
| L-nm Trigate Quantum-Well In0.53Ga0.47As Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2Gate-Stack TW Kim, DH Koh, CS Shin, WK Park, T Orzali, C Hobbs, WP Maszara, ... IEEE Electron Device Letters 36 (3), 223-225, 2015 | 35 | 2015 |
| Investigation of atomic layer deposited beryllium oxide material properties for high-k dielectric applications D Koh, JH Yum, SK Banerjee, TW Hudnall, C Bielawski, WA Lanford, ... Journal of Vacuum Science & Technology B 32 (3), 2014 | 30 | 2014 |
| X-ray photoelectron spectroscopy investigation of the valence band offset at beryllium oxide-diamond interfaces D Koh, SK Banerjee, J Brockman, M Kuhn, SW King Diamond and Related Materials 101, 107647, 2020 | 13 | 2020 |
| Sub-100 nm regrown S/D Gate-Last In0.7Ga0.3As QW MOSFETs with μn,eff > 5,500 cm2/V-s CS Shin, WK Park, SH Shin, YD Cho, DH Ko, TW Kim, DH Koh, HM Kwon, ... 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 11 | 2014 |
| A novel technique exploiting C–V, G–V and I–V simulations to investigate defect distribution and native oxide in high-κ dielectrics for III–V MOSFETs G Sereni, L Larcher, L Vandelli, D Veksler, T Kim, D Koh, G Bersuker Microelectronic Engineering 147, 281-284, 2015 | 8 | 2015 |
| Damage free Ar ion plasma surface treatment on In0. 53Ga0. 47As-on-silicon metal-oxide-semiconductor device D Koh, SH Shin, J Ahn, S Sonde, HM Kwon, T Orzali, DH Kim, TW Kim, ... Applied Physics Letters 107 (18), 2015 | 6 | 2015 |
| In0. 7Ga0. 3As quantum well MOSFETs with Al2O3/HfO2 toward subthreshold swing of∼ 60 mV/dec TW Kim, D Koh, H Kwon, CS Shin, WK Park, SH Shin, Y Cho, DH Ko, ... Applied Physics Express 7 (7), 074201, 2014 | 5 | 2014 |
| Valence and conduction band offsets at beryllium oxide interfaces with silicon carbide and III-V nitrides D Koh, SK Banerjee, C Locke, SE Saddow, J Brockman, M Kuhn, ... Journal of Vacuum Science & Technology B 37 (4), 2019 | 4 | 2019 |
| Nanoscale doping of compound semiconductors by solid phase dopant diffusion J Ahn, H Chou, D Koh, T Kim, A Roy, J Song, SK Banerjee Applied Physics Letters 108 (12), 2016 | 3 | 2016 |
| Novel atomic layer deposited thin film beryllium oxide for InGaAs MOS Devices D Koh, JH Yum, T Akyol, DA Ferrer, M Lei, TW Hudnall, MC Downer, ... 2012 International Conference on Indium Phosphide and Related Materials, 163-166, 2012 | 2 | 2012 |
| Lg= 100 nm In0. 7Ga0. 3As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer D Koh, HM Kwon, TW Kim, DH Kim, TW Hudnall, CW Bielawski, ... Applied Physics Letters 104 (16), 2014 | 1 | 2014 |
| X-Ray Photoemission Investigation of the Beryllium Oxide Band Alignment with Magnesium Oxide and Estimates for Other Insulating and Conducting Oxides D Koh, TW Hudnall, CW Bielawski, S Banerjee, J Brockman, M Kuhn, ... ECS Transactions 102 (3), 127, 2021 | | 2021 |
| X-ray photoelectron spectroscopy investigation of the valence band offset at beryllium oxide-diamond interfaces (vol 101, 107647, 2020) D Koh, TW Hudnall, CW Bielawski, SK Banerjee, J Brockman, M Kuhn, ... DIAMOND AND RELATED MATERIALS 111, 2021 | | 2021 |
| Corrigendum to" X-ray photoelectron spectroscopy investigation of the valence band offset at beryllium oxide-diamond interfaces"[Diam. Relat. Mater. 101 (2020) 107647-7] D Koh, TW Hudnall, CW Bielawski, SK Banerjee, J Brockman, M Kuhn, ... Diamond & Related Materials 111, 108217, 2021 | | 2021 |
| Valence and conduction band offsets at beryllium oxide interfaces with silicon carbide and III-V nitrides (vol 37, 041206, 2019) D Koh, SK Banerjee, C Locke, SE Saddow, J Brockman, M Kuhn, ... JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 38 (3), 2020 | | 2020 |
| Erratum:“Valence and conduction band offsets at beryllium oxide interfaces with silicon carbide and III-V nitrides”[J. Vac. Sci. Technol. B 37, 041206 (2019)] D Koh, SK Banerjee, C Locke, SE Saddow, J Brockman, M Kuhn, ... Journal of Vacuum Science & Technology B 38 (3), 2020 | | 2020 |
Dae-Hyun KIMAssociate Professor, College of IT Engineering, School of Electronics Engineering, Semiconductor在 ee.knu.ac.kr 的电子邮件经过验证
