| High-power modular multilevel converters with SiC JFETs D Peftitsis, G Tolstoy, A Antonopoulos, J Rabkowski, JK Lim, M Bakowski, ... IEEE Transactions on Power Electronics 27 (1), 28-36, 2011 | 230 | 2011 |
| Short-circuit protection circuits for silicon-carbide power transistors DP Sadik, J Colmenares, G Tolstoy, D Peftitsis, M Bakowski, J Rabkowski, ... IEEE transactions on industrial electronics 63 (4), 1995-2004, 2015 | 180 | 2015 |
| Challenges regarding parallel connection of SiC JFETs D Peftitsis, R Baburske, J Rabkowski, J Lutz, G Tolstoy, HP Nee IEEE Transactions on Power Electronics 28 (3), 1449-1463, 2012 | 144 | 2012 |
| Low-loss high-performance base-drive unit for SiC BJTs J Rabkowski, G Tolstoy, D Peftitsis, HP Nee IEEE Transactions on Power Electronics 27 (5), 2633-2643, 2011 | 108 | 2011 |
| High-efficiency 312-kVA three-phase inverter using parallel connection of silicon carbide MOSFET power modules J Colmenares, D Peftitsis, J Rabkowski, DP Sadik, G Tolstoy, HP Nee IEEE Transactions on Industry Applications 51 (6), 4664-4676, 2015 | 71 | 2015 |
| A discretized proportional base driver for silicon carbide bipolar junction transistors G Tolstoy, D Peftitsis, J Rabkowski, PR Palmer, HP Nee IEEE Transactions on Power Electronics 29 (5), 2408-2417, 2013 | 38 | 2013 |
| Analysis of short-circuit conditions for silicon carbide power transistors and suggestions for protection DP Sadik, J Colmenares, D Peftitsis, G Tolstoy, J Rabkowski, HP Nee 2014 16th European Conference on Power Electronics and Applications, 1-10, 2014 | 35 | 2014 |
| Experimental comparison of dc-dc boost converters with SiC JFETs and SiC bipolar transistors D Peftitsis, J Rabkowski, G Tolstoy, HP Nee Proceedings of the 2011 14th European Conference on Power Electronics and …, 2011 | 33 | 2011 |
| High-efficiency three-phase inverter with SiC MOSFET power modules for motor-drive applications J Colmenares, D Peftitsis, G Tolstoy, D Sadik, HP Nee, J Rabkowski 2014 IEEE Energy Conversion Congress and Exposition (ECCE), 468-474, 2014 | 29 | 2014 |
| Comparison of total losses of 1.2 kV SiC JFET and BJT in DC-DC converter including gate driver JK Lim, G Tolstoy, D Peftitsis, J Rabkowski, M Bakowski, HP Nee Materials Science Forum 679, 649-652, 2011 | 15 | 2011 |
| Performance Tests of a 4, 1x4, 1mm2 SiC LCVJFET for a DC/DC Boost Converter Application G Tolstoy, D Peftitsis, J Rabkowski, HP Nee Materials Science Forum 679, 722-725, 2011 | 15 | 2011 |
| An experimental analysis on how the dead-time of SiC BJT and SiC MOSFET impacts the losses in a high-frequency resonant converter G Tolstoy, P Ranstad, J Colmenares, D Peftitsis, F Giezendanner, ... 2014 16th European Conference on Power Electronics and Applications, 1-10, 2014 | 14 | 2014 |
| High-efficiency power conversion using silicon carbide power electronics HP Nee, J Rabkowski, D Peftitsis, G Tolstoy, J Colmenares, DP Sadik, ... Materials Science Forum 778, 1083-1088, 2014 | 7 | 2014 |
| Experimental comparison of different gate-driver configurations for parallel-connection of normally-on SiC JFETs D Peftitsis, JK Lim, J Rabkowski, G Tolstoy, HP Nee Proceedings of The 7th International Power Electronics and Motion Control …, 2012 | 6 | 2012 |
| Experimental evaluation of SiC BJTs and SiC MOSFETs in a series-loaded resonant converter G Tolstoy, P Ranstad, J Colmenares, F Giezendanner, HP Nee 2015 17th European Conference on Power Electronics and Applications (EPE'15 …, 2015 | 5 | 2015 |
| Sic power devices in a soft switching converter, including aspects on packaging P Ranstad, F Giezendanner, M Bakowski, JK Lim, G Tolstoy, A Ranstad ECS Transactions 64 (7), 51, 2014 | 4 | 2014 |
| Dual control used in series-loaded resonant converter with SiC devices G Tolstoy, P Ranstad, J Colmenares, F Giezendanner, HP Nee 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE …, 2015 | 3 | 2015 |
| High-efficiency SiC Power Conversion: Base Drivers for Bipolar Junction Transistors and Performance Impacts on Series-resonant Converters G Tolstoy KTH Royal Institute of Technology, 2015 | 3 | 2015 |
| Elimination of vector changes due to sector changes with DTC G Tolstoy, O Wallmark, S Norrga, HP Nee, B Larsson EPE Journal 25 (4), 11-16, 2015 | 1 | 2015 |
| Experimental evaluation of SiC BJT and SiC MOSFET in a series resonantconverter G Tolstoy, P Ranstad, J Colmenares, F Giezendanner, HP Nee | 1 | 2015 |
Hans-Peter NeeProfessor power electronics在 kth.se 的电子邮件经过验证
