| Analytical approach of a nanoscale triple-material surrounding gate (TMSG) MOSFETs for reduced short-channel effects PS Dhanaselvam, NB Balamurugan Microelectronics Journal 44 (5), 400-404, 2013 | 51 | 2013 |
| A 2D Transconductance and Sub-threshold behavior model for triple material surrounding gate (TMSG) MOSFETs PS Dhanaselvam, NB Balamurugan, VN Ramakrishnan Microelectronics Journal 44 (12), 1159-1164, 2013 | 23 | 2013 |
| Performance analysis of fully depleted triple material surrounding gate (TMSG) SOI MOSFET P Suveetha Dhanaselvam, NB Balamurugan Journal of Computational Electronics 13, 449-455, 2014 | 12 | 2014 |
| A 2d analytical modeling of single halo triple material surrounding gate (SHTMSG) mosfet PS Dhanaselvam, NB Balamurugan, GC Chakaravarthi, RP Ramesh, ... Journal of Electrical Engineering and Technology 9 (4), 1355-1359, 2014 | 11 | 2014 |
| A 2D sub-threshold current model for single halo triple material surrounding gate (SHTMSG) MOSFETs PS Dhanaselvam, NB Balamurugan Microelectronics Journal 45 (6), 574-577, 2014 | 10 | 2014 |
| A 2D transconductance and subthreshold behavior model for triple material surrounding gate (TMSG) MOSFET P Suveetha Dhanaselvam, NB Balamurugan, VN Ramakrishnan Microelectronics Journal 44 (12), 1159-1164, 2013 | 10 | 2013 |
| Pressure sensors using si/zno heterojunction diode PS Dhanaselvam, DS Kumar, VN Ramakrishnan, K Ramkumar, ... Silicon 14 (8), 4121-4127, 2022 | 9 | 2022 |
| Two dimensional analytical modeling of a nanoscale dual material gate MOSFETs PS Dhanaselvam, NB Balamurugan, P Vanitha, ST Chandra International Journal of Advanced Science and Technology 18, 49-58, 2010 | 7 | 2010 |
| Neonatal cry signal prediction and classification via dense convolution neural network V Vaishnavi, P Suveetha Dhanaselvam Journal of Intelligent & Fuzzy Systems 42 (6), 6103-6116, 2022 | 5 | 2022 |
| Analytical Modeling of Electric Field Distribution in Dual Material Junctionless Surrounding Gate MOSFETs PS Dhanaselvam, AN Ananthi International Journal of VLSI Design & Communication Systems 5 (3), 83, 2014 | 4 | 2014 |
| Analytical modeling and Simulation Based Investigation of Triple material surrounding gate heterojunction tunnel FET M Suguna, VA Nithya Sree, R Kaveri, M Hemalatha, NB Balamurugan, ... Silicon 14 (16), 10729-10740, 2022 | 3 | 2022 |
| Analytical Modeling of Surface Potential in Dual Material Junction less Surrounding Gate MOSFETS ANA P.Suveetha Dhanaselvam International Journal of Innovative Research in Science, Engineering and …, 2014 | 3* | 2014 |
| Novel attributes and analog performance analysis of dual material gate FINFET based high sensitive biosensors M Suguna, V Charumathi, M Hemalatha, NB Balamurugan, DS Kumar, ... Silicon 14 (5), 2389-2396, 2022 | 2 | 2022 |
| A 2D analytical modeling and simulation of double halo triple material surrounding gate (DH-TMSG) MOSFET PS Dhanaselvam, P Vimala, TSA Samuel Silicon 13 (8), 2631-2637, 2021 | 2 | 2021 |
| An automatic approach to extract features from the infant’s cry signals V Vaishnavi, PS Dhanaselvam Proceedings of the International Conference on Recent Trends in Computing …, 2019 | 2 | 2019 |
| A 2D unified subthreshold drain current investigation for junctionless cylindrical surrounding gate (JCSG) silicon nanowire transistor S Manikandan, PS Dhanaselvam, MK Pandian Silicon 14 (10), 5311-5318, 2022 | 1 | 2022 |
| A quasi 2D Electrostatic Potential and Threshold Voltage model for Junctionless Triple Material Cylindrical Surrounding Gate Si nanowire MKP S.Manikandan, P.Suveetha Dhanaselvam J.Nanoelectron.Optoelectron 16, 318-323, 2021 | 1 | 2021 |
| Principle and Application of C-based Nanomaterials: Graphite, Graphene, and Carbon Nanotube (CNT) PS Dhanaselvam, B Karthikeyan, P Vanitha Handbook of Emerging Materials for Semiconductor Industry, 49-64, 2024 | | 2024 |
| Advanced Tunnel Field-Effect Transistors with Multi-gate and Pocket-Doping Technology P Vanitha, PS Dhanaselvam, M Hemalatha Handbook of Emerging Materials for Semiconductor Industry, 511, 2024 | | 2024 |
| Scope with TFET-based circuit and system design PS Dhanaselvam, B Karthikeyan, P Vanitha, P Anand Device Circuit Co-Design Issues in FETs, 181-188, 2023 | | 2023 |
N.B.Balamurugan (0000-0002-0541-6...Professor,Thiagarajar College of Engineering在 tce.edu 的电子邮件经过验证
