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Mohamed Boutchich
Mohamed Boutchich
Sorbonne University - Engineering department
在 sorbonne-universite.fr 的电子邮件经过验证
标题
引用次数
引用次数
年份
Atomically Sharp Interface in an h-BN-epitaxial graphene van der Waals Heterostructure
H Sediri, D Pierucci, M Hajlaoui, H Henck, G Patriarche, YJ Dappe, ...
Scientific reports 5 (1), 16465, 2015
822015
A Self-Aligned High-Mobility Graphene Transistor: Decoupling the Channel with Fluorographene to Reduce Scattering.
KI Ho, M Boutchich, CY Su, R Moreddu, ES Marianathan, L Montes, ...
Advanced Materials (Deerfield Beach, Fla.) 27 (41), 6519-6525, 2015
672015
Young's modulus measurement of thin-film materials using micro-cantilevers
GJ McShane, M Boutchich, AS Phani, DF Moore, TJ Lu
Journal of Micromechanics and Microengineering 16 (10), 1926, 2006
512006
Characterization of phosphorus and boron heavily doped LPCVD polysilicon films in the temperature range 293-373 K
M Boutchich, K Ziouche, P Godts, D Leclercq
IEEE Electron Device Letters 23 (3), 139-141, 2002
492002
Nonvolatile memory cell comprising a nanowire and manufacturing method thereof
A Huerta, MJ Van Duuren, N Akil, D Golubovic, M Boutchich
US Patent 8,546,863, 2013
452013
Characterization of graphene oxide reduced through chemical and biological processes
M Boutchich, A Jaffré, D Alamarguy, J Alvarez, A Barras, Y Tanizawa, ...
Journal of Physics: Conference Series 433 (1), 012001, 2013
392013
Atmospheric pressure route to epitaxial nitrogen-doped trilayer graphene on 4H-SiC (0001) substrate
M Boutchich, H Arezki, D Alamarguy, KI Ho, H Sediri, F Güneş, J Alvarez, ...
Applied Physics Letters 105 (23), 2014
382014
Package-free infrared micro sensor using polysilicon thermopile
M Boutchich, K Ziouche, MAH Yala, P Godts, D Leclercq
Sensors and Actuators A: Physical 121 (1), 52-58, 2005
262005
Amorphous silicon diamond based heterojunctions with high rectification ratio
M Boutchich, J Alvarez, D Diouf, PR i Cabarrocas, M Liao, I Masataka, ...
Journal of non-crystalline solids 358 (17), 2110-2113, 2012
242012
Ultrafast electron dynamics in twisted graphene by femtosecond photoemission electron microscopy
K Fukumoto, M Boutchich, H Arezki, K Sakurai, D Di Felice, YJ Dappe, ...
Carbon 124, 49-56, 2017
232017
Integration of ammonia-plasma-functionalized graphene nanodiscs as charge trapping centers for nonvolatile memory applications
JC Wang, KP Chang, CT Lin, CY Su, F Güneş, M Boutchich, CH Chen, ...
Carbon 113, 318-324, 2017
232017
Direct transfer and Raman characterization of twisted graphene bilayer
R Othmen, H Arezki, H Ajlani, A Cavanna, M Boutchich, M Oueslati, ...
Applied Physics Letters 106 (10), 2015
192015
Photoconductivity of Hf-based binary metal oxide systems
S Shamuilia, VV Afanas’ev, A Stesmans, I McCarthy, SA Campbell, ...
Journal of applied physics 104 (11), 2008
172008
Tuning the work function of monolayer graphene on 4H-SiC (0001) with nitric acid
F Günes, H Arezki, D Pierucci, D Alamarguy, J Alvarez, JP Kleider, ...
Nanotechnology 26 (44), 445702, 2015
162015
Large local lattice expansion in graphene adlayers grown on copper
C Chen, J Avila, H Arezki, VL Nguyen, J Shen, M Mucha-Kruczyński, ...
Nature Materials 17 (5), 450-455, 2018
152018
Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging
J Alvarez, M Boutchich, JP Kleider, T Teraji, Y Koide
Journal of Physics D: Applied Physics 47 (35), 355102, 2014
152014
Graphene/fluorographene heterostructure for nano ribbon transistor channel
KP Chang, KI Ho, M Boutchich, J Chaste, H Arezki, CS Lai
Semiconductor Science and Technology 35 (1), 015005, 2019
122019
Photodetection and scintillation characterizations of novel lead-bismuth double perovskite halides
F Maddalena, ME Witkowski, M Makowski, A Bachiri, T Yang, ...
Journal of Materials Chemistry C 10 (31), 11266-11275, 2022
112022
Evaluation of layered tunnel barrier charge trapping devices for embedded non-volatile memories
M Boutchich, DS Golubović, N Akil, M van Duuren
Microelectronic engineering 87 (1), 41-46, 2010
112010
Imaging the defect distribution in 2D hexagonal boron nitride by tracing photogenerated electron dynamics
K Fukumoto, Y Suzuki, S Hou, MD Birowosuto, A Jaffre, D Alamarguy, ...
Journal of Physics D: Applied Physics 53 (40), 405106, 2020
102020
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