| An electrostatic analytical modeling of high-k stacked gate-all-around heterojunction tunnel FETs considering the depletion regions C Usha, P Vimala AEU-International Journal of Electronics and Communications 110, 152877, 2019 | 22 | 2019 |
| Analytical drain current model for fully depleted surrounding gate TFET C Usha, P Vimala Journal of Nano Research 55, 75-81, 2018 | 16 | 2018 |
| A tunneling FET exploiting in various structures and different models: A review C Usha, P Vimala 2015 International Conference on Innovations in Information, Embedded and …, 2015 | 16 | 2015 |
| A novel 2-D analytical model for the electrical characteristics of a gate-all-around heterojunction tunnel field-effect transistor including depletion regions C Usha, P Vimala, TSA Samuel, MK Pandian Journal of Computational Electronics 19, 1144-1153, 2020 | 15 | 2020 |
| A new analytical approach to threshold voltage modeling of triple material gate-all-around heterojunction tunnel field effect transistor C Usha, P Vimala Indian Journal of Physics 95, 1365-1371, 2021 | 12 | 2021 |
| Electrostatic characteristics of a high-k stacked gate-all-around heterojunction tunnel field-effect transistor using the superposition principle C Usha, P Vimala, K Ramkumar, VN Ramakrishnan Journal of Computational Electronics, 1-10, 2022 | 11 | 2022 |
| Analytical drain current modeling and simulation of triple material gate-all-around heterojunction TFETs considering depletion regions C Usha, P Vimala Semiconductors 54, 1634-1640, 2020 | 5 | 2020 |
| Modeling of Source Pocket Engineered PNPN Tunnel FET on High-K Buried Oxide (H-BOX) Substrate for Improved ON Current P Vimala, M ul Haque, C Usha Silicon 14 (16), 10383-10389, 2022 | 4 | 2022 |
| An analytical modeling of conical gate-all-around tunnel field effect transistor C Usha, P Vimala Silicon 13 (8), 2563-2568, 2021 | 4 | 2021 |
| A compact two-dimensional analytical model of the electrical characteristics of a triple-material double-gate tunneling FET structure C Usha, P Vimala Journal of Semiconductors 40 (12), 122901, 2019 | 3 | 2019 |
| A Study of Graphene FET for Better Performance P Vimala, K Dharshan, S Harshith, VM Kishore, C Usha 2023 Second International Conference on Electrical, Electronics, Information …, 2023 | 1 | 2023 |
| Impact Analysis and Simulation of Cylindrical Nanowire Biosensor K Darshan, T Chaudhary, K Yashwant, P Vimala, KS Ranjan, C Usha 2021 IEEE Mysore Sub Section International Conference (MysuruCon), 285-288, 2021 | 1 | 2021 |
| Influence of high-k material in gate engineering and in multi-gate field effect transistor devices C Usha, P Vimala High-k materials in multi-gate FET devices, 33-54, 2021 | 1 | 2021 |
| Physics based model for potential distribution and threshold voltage of gate-all-around tunnel field effect transistor (GAA-TFET) C Usha, P Vimala, VN Ramakrishnan Materials Today: Proceedings 45, 4052-4057, 2021 | 1 | 2021 |
| Impact of Material in Gate Engineering of Various TFET Architectures P Vimala, C Usha Handbook of Emerging Materials for Semiconductor Industry, 333, 2024 | | 2024 |
| Evolution of Heterojunction Tunnel Field Effect Transistor and its Advantages C Usha, P Vimala Tunneling Field Effect Transistors, 99-123, 2023 | | 2023 |
| Performance Analysis of Extended Gate FET pH Biosensor D Bharadwaj, N Arpitha, M Siddarth, C Usha 2021 IEEE International Conference on Electronics, Computing and …, 2021 | | 2021 |
| Modelling Simulation Analysis of Gate Engineered heterojunction surrounding gate TFETs C Usha Belagavi, 0 | | |
