| Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy E Ahmadi, OS Koksaldi, SW Kaun, Y Oshima, DB Short, UK Mishra, ... Applied Physics Express 10 (4), 041102, 2017 | 270 | 2017 |
| Donors and deep acceptors in β-Ga2O3 AT Neal, S Mou, S Rafique, H Zhao, E Ahmadi, JS Speck, KT Stevens, ... Applied Physics Letters 113 (6), 062101, 2018 | 269 | 2018 |
| N-polar GaN epitaxy and high electron mobility transistors MH Wong, S Keller, SD Nidhi, DJ Denninghoff, S Kolluri, DF Brown, J Lu, ... Semiconductor Science and Technology 28 (7), 074009, 2013 | 245 | 2013 |
| Demonstration of β-(Al x Ga1− x) 2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy E Ahmadi, OS Koksaldi, X Zheng, T Mates, Y Oshima, UK Mishra, ... Applied Physics Express 10 (7), 071101, 2017 | 240 | 2017 |
| Materials issues and devices of α- and β-Ga2O3 E Ahmadi, Y Oshima Journal of Applied Physics 126 (16), 160901, 2019 | 227 | 2019 |
| Demonstration of constant 8 W/mm power density at 10, 30, and 94 GHz in state-of-the-art millimeter-wave N-polar GaN MISHEMTs B Romanczyk, S Wienecke, M Guidry, H Li, E Ahmadi, X Zheng, S Keller, ... IEEE Transactions on Electron Devices 65 (1), 45-50, 2017 | 206 | 2017 |
| Ge-Doped -Ga2O3 MOSFETs N Moser, J McCandless, A Crespo, K Leedy, A Green, A Neal, S Mou, ... IEEE Electron Device Letters 38 (6), 775-778, 2017 | 205 | 2017 |
| Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy E Farzana, E Ahmadi, JS Speck, AR Arehart, SA Ringel Journal of Applied Physics 123 (16), 161410, 2018 | 119 | 2018 |
| N-Polar GaN Cap MISHEMT With Record Power Density Exceeding 6.5 W/mm at 94 GHz S Wienecke, B Romanczyk, M Guidry, H Li, E Ahmadi, K Hestroffer, ... IEEE Electron Device Letters 38 (3), 359-362, 2017 | 117 | 2017 |
| Composition determination of β-(Al x Ga1− x) 2O3 layers coherently grown on (010) β-Ga2O3 substrates by high-resolution X-ray diffraction Y Oshima, E Ahmadi, SC Badescu, F Wu, JS Speck Applied Physics Express 9 (6), 061102, 2016 | 116 | 2016 |
| Chlorine-based dry etching of β-Ga2O3 JE Hogan, SW Kaun, E Ahmadi, Y Oshima, JS Speck Semiconductor Science and Technology 31 (6), 065006, 2016 | 115 | 2016 |
| W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs B Romanczyk, X Zheng, M Guidry, H Li, N Hatui, C Wurm, A Krishna, ... IEEE Electron Device Letters 41 (3), 349-352, 2020 | 100 | 2020 |
| n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy SH Han, A Mauze, E Ahmadi, T Mates, Y Oshima, JS Speck Semiconductor Science and Technology 33 (4), 045001, 2018 | 78 | 2018 |
| Sn doping of (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy A Mauze, Y Zhang, T Itoh, E Ahmadi, JS Speck Applied Physics Letters 117 (22), 222102, 2020 | 68 | 2020 |
| Schottky barrier height of Ni to β-(AlxGa1− x) 2O3 with different compositions grown by plasma-assisted molecular beam epitaxy E Ahmadi, Y Oshima, F Wu, JS Speck Semiconductor Science and Technology 32 (3), 035004, 2017 | 68 | 2017 |
| GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy SW Kaun, E Ahmadi, B Mazumder, F Wu, ECH Kyle, PG Burke, UK Mishra, ... Semiconductor Science and Technology 29 (4), 045011, 2014 | 62 | 2014 |
| Temperature-dependent current-voltage characteristics of β-Ga2O3 trench Schottky barrier diodes ZA Jian, S Mohanty, E Ahmadi Applied Physics Letters 116 (15), 2020 | 59 | 2020 |
| Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy Y Oshima, E Ahmadi, S Kaun, F Wu, JS Speck Semiconductor Science and Technology 33 (1), 015013, 2017 | 59 | 2017 |
| An epitaxial ferroelectric ScAlN/GaN heterostructure memory D Wang, P Wang, S Mondal, S Mohanty, T Ma, E Ahmadi, Z Mi Advanced Electronic Materials 8 (9), 2200005, 2022 | 58 | 2022 |
| Dispersion free 450-V p GaN-Gated CAVETs with Mg-ion implanted blocking layer S Mandal, A Agarwal, E Ahmadi, KM Bhat, D Ji, MA Laurent, S Keller, ... IEEE Electron Device Letters 38 (7), 933-936, 2017 | 51 | 2017 |
Umesh MishraUCSB在 ece.ucsb.edu 的电子邮件经过验证
