Influence of light waves on the effective electron mass in quantum wells, wires, inversion layers and superlattices PK Bose, N Paitya, S Bhattacharya, D De, S Saha, KM Chatterjee, ... Quantum Matter 1 (2), 89-126, 2012 | 329 | 2012 |
Influence of quantizing magnetic field on the Fowler-Nordheim field emission from non-parabolic materials N Paitya, S Bhattacharya, D De, KP Ghatak Quantum Matter 1 (1), 63-85, 2012 | 186 | 2012 |
Quantization and carrier mass N Paitya, KP Ghatak Reviews in Theoretical Science 1 (2), 165-305, 2013 | 100 | 2013 |
Einstein relation in compound semiconductors and their nanostructures KP Ghatak, S Bhattacharya, D De Springer Science & Business Media, 2008 | 74 | 2008 |
The simple analysis of the Burstein–Moss shift in degenerate n-type semiconductors PK Chakraborty, GC Datta, KP Ghatak Physica B: Condensed Matter 339 (4), 198-203, 2003 | 67 | 2003 |
On the Fowler-Nordheim field emission from quantum-confined optoelectronic materials in the presence of light waves KP Ghatak, S Bhattacharya, A Mondal, S Debbarma, P Ghorai, ... Quantum Matter 2 (1), 25-41, 2013 | 59 | 2013 |
A simple theoretical analysis of the effective electron mass in heavily doped III–V semiconductors in the presence of band-tails PK Chakraborty, GC Datta, KP Ghatak Physica Scripta 68 (5), 368, 2003 | 59 | 2003 |
Simple theoretical analysis of the field emission from quantum wire effective mass superlattices of heavily doped materials SM Adhikari, A Sakar, KP Ghatak Quantum Matter 2 (6), 455-464, 2013 | 58 | 2013 |
On the effective electron mass in strained layer superlattices of non-parabolic semiconductors under strong magnetic quantization KPGB Mitra. Internat. Jour. Of Elect 72, 541-552, 1992 | 56 | 1992 |
Theoretical analysis of the effective electron mass in ultrathin films of ternary chalcopyrite semiconductors in the presence of crossed electric and magnetic fields M Mondal, N Chattopadhyay, KP Ghatak Journal of low temperature physics 66, 131-143, 1987 | 55 | 1987 |
Theoretical study of the effective electron mass in ternary chalcopyrite semiconductors in the presence of crossed electric and magnetic fields KP Ghatak, M Mondal Zeitschrift für Physik B Condensed Matter 69, 471-479, 1988 | 49 | 1988 |
On a simplified analysis of the carrier contribution to the elastic constants in semiconductor superlattices in the presence of crossed electric and quantizing magnetic fields KP Ghatak, DK Basu, B Nag Journal of Physics and Chemistry of Solids 58 (1), 133-138, 1997 | 48 | 1997 |
On the effective electron mass in N-channel inversion layers of Ge B Mitra, KP Ghatak Solid-state electronics 32 (2), 177-178, 1989 | 48 | 1989 |
On the thermoelectric power in n‐channel inversion layers of ternary chalcopyrite semiconductors under magnetic quantization KP Ghatak, SN Biswas Journal of applied physics 70 (1), 299-304, 1991 | 47 | 1991 |
On the gate capacitance of metal–oxide semiconductor structures in N‐channel inversion layers on ternary chalcopyrite semiconductors KP Ghatak, S Biswas Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1989 | 45 | 1989 |
Influence of light on the Debye screening length in III–V, ternary, and quaternary materials KP Ghatak, S Bhattacharya Journal of Applied Physics 102 (7), 2007 | 44 | 2007 |
Effect of size quantization on the effective mass in ultrathin films ofn-Cd3As2 AN Chakravarti, KP Ghatak, KK Ghosh, S Ghosh, A Dhar Zeitschrift für Physik B Condensed Matter 47, 149-153, 1982 | 44 | 1982 |
A simple theoretical analysis of the carrier contribution to the elastic constants in quantum wires of IV–VI semiconductors in the presence of a parallel magnetic field B Nag, KP Ghatak Journal of Physics and Chemistry of Solids 58 (3), 427-432, 1997 | 43 | 1997 |
On the photoemission from quantum‐confined Kane‐type semiconductors KP Ghatak, M Mondal Journal of applied physics 69 (3), 1666-1677, 1991 | 43 | 1991 |
The carrier contribution to the elastic constants in small-gap materials KP Ghatak, JP Banerjee, B Nag Journal of applied physics 83 (3), 1420-1425, 1998 | 41 | 1998 |