| Temperature dependence of the first-order Raman scattering by phonons in Si, Ge, and α− S n: Anharmonic effects J Menéndez, M Cardona Physical Review B 29 (4), 2051, 1984 | 945 | 1984 |
| Resonance Raman scattering by confined LO and TO phonons in GaAs-AlAs superlattices AK Sood, J Menendez, M Cardona, K Ploog Physical review letters 54 (19), 2111, 1985 | 606 | 1985 |
| Interface vibrational modes in GaAs-AlAs superlattices AK Sood, J Menendez, M Cardona, K Ploog Physical review letters 54 (19), 2115, 1985 | 490 | 1985 |
| Hybrid Group IV/III-V Semiconductor Structures J Kouvetakis, J Menendez US Patent App. 13/062,304, 2011 | 482 | 2011 |
| GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon J Kouvetakis, M Bauer, J Menendez, CW Hu, IST Tsong, J Tolle US Patent 7,589,003, 2009 | 479 | 2009 |
| Optical critical points of thin-film alloys: A comparative study VR D’costa, CS Cook, AG Birdwell, CL Littler, M Canonico, S Zollner, ... Physical Review B—Condensed Matter and Materials Physics 73 (12), 125207, 2006 | 439 | 2006 |
| Materials and optical devices based on group IV quantum wells grown on Si-Ge-Sn buffered silicon J Kouvetakis, J Menendez, J Tolle, L Liao, D Samara-Rubio US Patent 7,582,891, 2009 | 357 | 2009 |
| Ge–Sn semiconductors for band-gap and lattice engineering M Bauer, J Taraci, J Tolle, AVG Chizmeshya, S Zollner, DJ Smith, ... Applied physics letters 81 (16), 2992-2994, 2002 | 335 | 2002 |
| Tin-based group IV semiconductors: New platforms for opto-and microelectronics on silicon J Kouvetakis, J Menendez, AVG Chizmeshya Annu. Rev. Mater. Res. 36 (1), 497-554, 2006 | 328 | 2006 |
| Direct-gap photoluminescence with tunable emission wavelength in Ge1− ySny alloys on silicon J Mathews, RT Beeler, J Tolle, C Xu, R Roucka, J Kouvetakis, ... Applied physics letters 97 (22), 2010 | 231 | 2010 |
| Type-I strained-layer heterostructures with a direct bandgap J Menendez, J Kouvetakis Applied physics letters 85 (7), 1175-1177, 2004 | 231 | 2004 |
| Extended performance GeSn/Si (100) pin photodetectors for full spectral range telecommunication applications J Mathews, R Roucka, J Xie, SQ Yu, J Menéndez, J Kouvetakis Applied physics letters 95 (13), 2009 | 227 | 2009 |
| Interference effects: A key to understanding forbidden Raman scattering by LO phonons in GaAs J Menendéz, M Cardona Physical Review B 31 (6), 3696, 1985 | 189 | 1985 |
| First-principles quantum molecular-dynamics study of the vibrations of icosahedral GB Adams, JB Page, OF Sankey, K Sinha, J Menendez, DR Huffman Physical Review B 44 (8), 4052, 1991 | 158 | 1991 |
| Perfectly tetragonal, tensile-strained Ge on Ge1− ySny buffered Si (100) YY Fang, J Tolle, R Roucka, AVG Chizmeshya, J Kouvetakis, VR D’Costa, ... Applied physics letters 90 (6), 2007 | 157 | 2007 |
| Tunable optical gap at a fixed lattice constant in group-IV semiconductor alloys VR D’Costa, YY Fang, J Tolle, J Kouvetakis, J Menendez Physical Review Letters 102 (10), 107403, 2009 | 156 | 2009 |
| Phonons in GaAs-AlxGa1− xAs superlattices J Menéndez Journal of luminescence 44 (4-6), 285-314, 1989 | 154 | 1989 |
| Empirical bond polarizability model for fullerenes S Guha, J Menendez, JB Page, GB Adams Physical Review B 53 (19), 13106, 1996 | 150 | 1996 |
| Synthesis of ternary SiGeSn semiconductors on Si(100) via buffer layers M Bauer, C Ritter, PA Crozier, J Ren, J Menendez, G Wolf, J Kouvetakis Applied physics letters 83 (11), 2163-2165, 2003 | 146 | 2003 |
| Raman studies of semiconducting oxide nanobelts K Mcguire, ZW Pan, ZL Wang, D Milkie, J Menendez, AM Rao Journal of nanoscience and nanotechnology 2 (5), 499-502, 2002 | 138 | 2002 |
John KouvetakisArizona State University在 asu.edu 的电子邮件经过验证
