关注
Szymon Bęczkowski
Szymon Bęczkowski
在 et.aau.dk 的电子邮件经过验证 - 首页
标题
引用次数
引用次数
年份
Influences of device and circuit mismatches on paralleling silicon carbide MOSFETs
H Li, S Munk-Nielsen, X Wang, R Maheshwari, S Bęczkowski, ...
IEEE Transactions on Power Electronics 31 (1), 621-634, 2015
2832015
Complete loss and thermal model of power semiconductors including device rating information
K Ma, AS Bahman, S Beczkowski, F Blaabjerg
IEEE Transactions on Power Electronics 30 (5), 2556-2569, 2014
2072014
Online Vce measurement method for wear-out monitoring of high power IGBT modules
S Bęczkowski, P Ghimre, AR de Vega, S Munk-Nielsen, B Rannestad, ...
15th European Conference on Power Electronics and Applications (EPE2013), 2013
1882013
Improving power converter reliability: online monitoring of high-power IGBT modules
P Ghimire, AR de Vega, S Beczkowski, B Rannestad, S Munk-Nielsen, ...
IEEE Industrial Electronics Magazine 8 (3), 40-50, 2014
1282014
A review on real time physical measurement techniques and their attempt to predict wear-out status of IGBT
P Ghimire, S Beczkowski, S Munk-Nielsen, B Rannestad, PB Thøgersen
15th European Conference on Power Electronics and Applications (EPE 2013), 2013
1112013
A Novel DBC Layout for Current Imbalance Mitigation in SiC MOSFET Multichip Power Modules
H Li, S Munk-Nielsen, S Beczkowski, X Wang
Proceedings of the Ieee Applied Power Electronics Conference (apec 2016), 2016
1082016
A Fast-Switching Integrated Full-Bridge Power Module Based on GaN eHEMT Devices
AB Jørgensen, S Beczkowski, C Uhrenfeldt, NH Petersen, S Jørgensen, ...
Ieee Transactions on Power Electronics, 2018
1072018
Impact of Power Module Parasitic Capacitances on Medium-Voltage SiC MOSFETs Switching Transients
DN Dalal, N Christensen, AB Jørgensen, JK Jørgensen, S Bęczkowski, ...
IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (1), 298-310, 2019
992019
Short-Circuit Degradation of 10-kV 10-A SiC MOSFET
EP Eni, S Bęczkowski, S Munk-Nielsen, T Kerekes, R Teodorescu, ...
IEEE Transactions on Power Electronics 32 (12), 9342-9354, 2017
772017
LED spectral and power characteristics under hybrid PWM/AM dimming strategy
S Bęczkowski, S Munk-Nielsen
Energy Conversion Congress and Exposition (ECCE), 2010 IEEE, 731-735, 2010
722010
Reduction of parasitic capacitance in 10 kV SiC MOSFET power modules using 3D FEM
AB Jørgensen, N Christensen, DN Dalal, SD Sønderskov, S Bęczkowski, ...
2017 19th European Conference on Power Electronics and Applications (EPE'17 …, 2017
552017
Effects of auxiliary-source connections in multichip power module
H Li, S Munk-Nielsen, X Wang, S Bęczkowski, SR Jones, X Dai
IEEE Transactions on Power Electronics 32 (10), 7816-7823, 2016
552016
Gate driver with high common mode rejection and self turn-on mitigation for a 10 kV SiC MOSFET enabled MV converter
DN Dalal, N Christensen, AB Jørgensen, SD Sønderskov, S Bęczkowski, ...
2017 19th European Conference on Power Electronics and Applications (EPE'17 …, 2017
532017
Circuit mismatch influence on performance of paralleling silicon carbide MOSFETs
H Li, S Munk-Nielsen, C Pham, S Bęczkowski
2014 16th European Conference on Power Electronics and Applications, 1-8, 2014
522014
Physics-Based Modeling of Parasitic Capacitance in Medium-Voltage Filter Inductors
H Zhao, DN Dalal, AB Jørgensen, JK Jørgensen, X Wang, S Beczkowski, ...
IEEE Transactions on Power Electronics, 2020
452020
Switching current imbalance mitigation in power modules with parallel connected SiC MOSFETs
S Bęczkowski, AB Jørgensen, H Li, C Uhrenfeldt, X Dai, S Munk-Nielsen
2017 19th European Conference on Power Electronics and Applications (EPE'17 …, 2017
442017
Common mode current mitigation for medium voltage half bridge SiC Modules
N Christensen, AB Jørgensen, D Dalal, SD Sonderskov, S Bęczkowski, ...
2017 19th European Conference on Power Electronics and Applications (EPE'17 …, 2017
372017
Test setup for long term reliability investigation of Silicon Carbide MOSFETs
N Baker, S Munk-Nielsen, S Bęczkowski
15th European Conference on Power Electronics and Applications (EPE2013), 2013
352013
Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack
DN Dalal, H Zhao, JK Jørgensen, N Christensen, AB Jørgensen, ...
2020 IEEE Applied Power Electronics Conference and Exposition (APEC), 2751-2757, 2020
342020
Short-circuit characterization of 10 kV 10A 4H-SiC MOSFET
EP Eni, S Bęczkowski, S Munk-Nielsen, T Kerekes, R Teodorescu
2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 974-978, 2016
332016
系统目前无法执行此操作,请稍后再试。
文章 1–20