| A comprehensive review of semiconductor ultraviolet photodetectors: from thin film to one-dimensional nanostructures L Sang, M Liao, M Sumiya Sensors 13 (8), 10482-10518, 2013 | 811 | 2013 |
| High Detectivity Solar‐Blind High‐Temperature Deep‐Ultraviolet Photodetector Based on Multi‐Layered (l00) Facet‐Oriented β‐Ga2O3 Nanobelts R Zou, Z Zhang, Q Liu, J Hu, L Sang, M Liao, W Zhang Small 10 (9), 1848-1856, 2014 | 210 | 2014 |
| Electrochemical-coupling layer-by-layer (ECC–LbL) assembly M Li, S Ishihara, M Akada, M Liao, L Sang, JP Hill, V Krishnan, Y Ma, ... Journal of the American Chemical Society 133 (19), 7348-7351, 2011 | 154 | 2011 |
| Comprehensive investigation of single crystal diamond deep-ultraviolet detectors M Liao, L Sang, T Teraji, M Imura, J Alvarez, Y Koide Japanese Journal of Applied Physics 51 (9R), 090115, 2012 | 111 | 2012 |
| New UV‐A photodetector based on individual potassium niobate nanowires with high performance H Liu, Z Zhang, L Hu, N Gao, L Sang, M Liao, R Ma, F Xu, X Fang Advanced Optical Materials 2 (8), 771-778, 2014 | 110 | 2014 |
| Enhanced performance of InGaN solar cell by using a super-thin AlN interlayer L Sang, M Liao, N Ikeda, Y Koide, M Sumiya Applied Physics Letters 99 (16), 2011 | 87 | 2011 |
| Single ZnO nanowire/p-type GaN heterojunctions for photovoltaic devices and UV light-emitting diodes YQ Bie, ZM Liao, PW Wang, YB Zhou, XB Han, Y Ye, Q Zhao, XS Wu, ... Adv. Mater 22 (38), 4284-4287, 2010 | 86 | 2010 |
| High-temperature ultraviolet detection based on InGaN Schottky photodiodes L Sang, M Liao, Y Koide, M Sumiya Applied Physics Letters 99 (3), 2011 | 76 | 2011 |
| An Interface Engineered Multicolor Photodetector Based on n‐Si(111)/TiO2 Nanorod Array Heterojunction T Ji, Q Liu, R Zou, Y Sun, K Xu, L Sang, M Liao, Y Koide, L Yu, J Hu Advanced Functional Materials 26 (9), 1400-1410, 2016 | 73 | 2016 |
| Enhanced UV-visible light photodetectors with a TiO 2/Si heterojunction using band engineering T Ji, Q Liu, R Zou, Y Zhang, L Wang, L Sang, M Liao, J Hu Journal of Materials Chemistry C 5 (48), 12848-12856, 2017 | 66 | 2017 |
| High-performance metal-semiconductor-metal InGaN photodetectors using CaF2 as the insulator L Sang, M Liao, Y Koide, M Sumiya Applied Physics Letters 98 (10), 2011 | 65 | 2011 |
| Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes L Sang, B Ren, M Sumiya, M Liao, Y Koide, A Tanaka, Y Cho, Y Harada, ... Applied physics letters 111 (12), 2017 | 61 | 2017 |
| Ladiratuzumab vedotin for metastatic triple negative cancer: preliminary results, key challenges, and clinical potential A Rizzo, A Cusmai, S Acquafredda, L Rinaldi, G Palmiotti Expert opinion on investigational drugs 31 (6), 495-498, 2022 | 59 | 2022 |
| Diamond as the heat spreader for the thermal dissipation of GaN-based electronic devices L Sang Functional Diamond 1 (1), 174-188, 2022 | 59 | 2022 |
| Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices S Cheng, L Sang, M Liao, J Liu, M Imura, H Li, Y Koide Applied Physics Letters 101 (23), 2012 | 57 | 2012 |
| Reduction in threading dislocation densities in AlN epilayer by introducing a pulsed atomic-layer epitaxial buffer layer LW Sang, ZX Qin, H Fang, T Dai, ZJ Yang, B Shen, GY Zhang, XP Zhang, ... Applied Physics Letters 93 (12), 2008 | 57 | 2008 |
| Nearly ideal vertical GaN Schottky barrier diodes with ultralow turn-on voltage and on-resistance B Ren, M Liao, M Sumiya, L Wang, Y Koide, L Sang Applied Physics Express 10 (5), 051001, 2017 | 52 | 2017 |
| A multilevel intermediate-band solar cell by InGaN/GaN quantum dots with a strain-modulated structure L Sang, M Liao, Q Liang, M Takeguchi, B Dierre, B Shen, T Sekiguchi, ... Advanced materials (Deerfield Beach, Fla.) 26 (9), 1414-1420, 2014 | 49 | 2014 |
| Study on the formation of dodecagonal pyramid on nitrogen polar GaN surface etched by hot H3PO4 SL Qi, ZZ Chen, H Fang, YJ Sun, LW Sang, XL Yang, LB Zhao, PF Tian, ... Applied Physics Letters 95 (7), 2009 | 49 | 2009 |
| Energy‐efficient metal–insulator–metal‐semiconductor field‐effect transistors based on 2D carrier gases M Liao, L Sang, T Shimaoka, M Imura, S Koizumi, Y Koide Advanced Electronic Materials 5 (5), 1800832, 2019 | 48 | 2019 |
Meiyong LiaoNational Institute for Materials Science在 nims.go.jp 的电子邮件经过验证
